208794 ⎘
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
Method for making epitaxial structure
#1202SEMICONDUCTOR STRUCTURES AND METHOD FOR FABRICATING THE SAME
#1203Nitride semiconductor light emitting diode
#1204Light emitting diode, light emitting diode lamp, and illuminating apparatus
#1205Method for fabricating semiconductor lighting chip
#1206Nitride semiconductor substrate and method for manufacturing the same
#1207Nitirde semiconductor light emitting diode
#1208Substrate structure and fabrication thereof, and light emitting diode devices fabricated from the same
#1209Semiconductor light emitting device
#1210Light-emitting diode having an interlayer with high voltage density and method for manufacturing the same
#1211Optoelectronic device and method for manufacturing the same
#1212Light emitting device
#1213Light emitting device
#1214Epitaxial structure with an epitaxial defect barrier layer
#1215Light emitting diode and method for fabricating the same
#1216Method for manufacturing gallium oxide based substrate, light emitting device, and method for manufacturing the light emitting device
#1217Gallium nitride semiconductor structures with compositionally-graded transition layer
#1218Method for fabricating light emitting device
#1219NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THEREOF
#1220Semiconductor light-emitting device, manufacturing method thereof, and lamp
#1221Light-emitting diode device structure with SiNlayer
#1222Epitaxial substrate, semiconductor light-emitting device using such epitaxial substrate and fabrication thereof
#1223Group III nitride semiconductor substrate having a sulfide in a surface layer
#1224Optoelectronic device and method for manufacturing the same
#1225IIIONon single crystal SOI substrate and III n growth platform
#1226Optoelectronic device and method for manufacturing the same
#1227Forming light-emitting diodes using seed particles
#1228Thick pseudomorphic nitride epitaxial layers
#1229Method of making bulk InGaN substrates and devices thereon
#1230Semiconductor light-emitting structure having low thermal stress
#1231Method for producing group III nitride semiconductor light-emitting device
#1232Production method of red light emitting semiconductor device
#1233Wafer-level light emitting diode package and method of fabricating the same
#1234Semiconductor devices and methods of manufacturing the same
#1235Light emitting diode and method for manufacture of the same
#1236Method of controlling stress in group-III nitride films deposited on substrates
#1237III nitride semiconductor substrate, epitaxial substrate, and semiconductor device
#1238NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR GROWING NITRIDE SEMICONDUCTOR CRYSTAL LAYER
#1239Semiconductor light emitting device
#1240Semiconductor light emitting device
#1241GaN-based light-emitting diode and method for manufacturing the same
#1242Light emitting device and lighting system having the same
#1243Light emitting diode element with porous SiC emitting by donor acceptor pair
#1244Semiconductor light emitting devices having an uneven emission pattern layer and methods of manufacturing the same
#1245Light emitting diode, method of fabricating the same, and liquid crystal display including the same
#1246Solid state lighting devices with reduced crystal lattice dislocations and associated methods of manufacturing
#1247Light-emitting element capable of increasing amount of light emitted, light-emitting device including the same, and method of manufacturing light-emitting element and light-emitting device
#1248Substrate structure and method of manufacturing the same
#1249Light emitting diode, light emitting diode lamp and illuminating device
#1250Semiconductor device having a group-III nitride superlattice layer on a silicon substrate
#1251III-nitride based semiconductor structure with multiple conductive tunneling layer
#1252Semiconductor structure having low thermal stress and method for manufacturing thereof
#1253Group-III nitride epitaxial layer on silicon substrate
#1254Nitride semiconductor light emitting device and fabrication method thereof
#1255Sapphire substrate and nitride semiconductor light emitting device
#1256Epitaxial wafer for light emitting diode
#1257Semiconductor device, light emitting device and method of manufacturing same
#1258Diode having vertical structure and method of manufacturing the same
#1259SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME
#1260Mixed alloy defect redirection region and devices including same
#1261Semi-polar nitride-based light emitting structure and method of forming same
#1262Light-emitting devices and methods of manufacturing the same
#1263Method of growing composite substrate using a relaxed strained layer
#1264Nitride LED with a schottky electrode penetrating a transparent electrode
#1265Light emitting device, light emitting device package, and lighting device system
#1266Light emitting device grown on a relaxed layer
#1267Light emitting device and light emitting device package
#1268Relaxed InGaN/AlGaN templates
#1269SEMICONDUCTOR EPITAXIAL STRUCTURES AND SEMICONDUCTOR OPTOELECTRONIC DEVICES COMPRISING THE SAME
#1270White-emitting LED chips and method for making same
#1271Light emitting element and manufacturing method thereof
#1272Semiconductor light emitting device having patterned substrate and manufacturing method of the same
#1273SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THEREOF
#1274Method of manufacturing a light emitting diode
#1275Gallium nitride based light emitting diode and fabrication method thereof
#1276Semiconductor light emitting device and method for manufacturing the same
#1277Nitride-based light emitting device
#1278Nitride-based semiconductor light-emitting device
#1279Diode having high brightness and method thereof
#1280SUPERLATTICE FREE ULTRAVIOLET EMITTER
#1281Light emitting device, light emitting device package
#1282Method for growing a nitride-based III-V group compound semiconductor
#1283SEMICONDUCTOR WAFER
#1284Crystal growth method and semiconductor light emitting device
#1285Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates
#1286Semiconductor light emitting device
#1287Method of fabricating vertical structure LEDs
#1288LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME
#1289III-nitride light emitting device including porous semiconductor
#1290LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM
#1291SEMICONDUCTOR LIGHT EMITTING DEVICE WITH CURVATURE CONTROL LAYER
#1292Semiconductor light emitting device and manufacturing method therefor
#1293LIGHT-EMITTING DIODE STRUCTURE
#1294Light emitting device, light emitting device package and illumination system for reducing dislocation in semiconductor layer
#1295Light emitting device, method of manufacturing the same, light emitting device package and lighting system
#1296Light emitting device
#1297SEMICONDUCTOR WITH LOW DISLOCATION
#1298Structure of thin nitride film and formation method thereof
#1299Nitride-based light-emitting device
#1300Relaxed InGaN/AlGaN templates
#1301Light emitting device, light emitting device package and lighting system
#1302Group III nitride semiconductor multilayer structure and production method thereof
#1303Semiconductor element and a production method therefor
#1304Gallium nitride light emitting devices and methods of manufacturing the same
#1305Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods
#1306Field-effect transistor with compositionally graded nitride layer on a silicaon substrate
#1307SILICON BASED SOLID STATE LIGHTING
#1308Group III nitride semiconductor device and method for manufacturing the same, group III nitride semiconductor light-emitting device and method for manufacturing the same, and lamp
#1309Group-III nitride semiconductor light-emitting device, method for manufacturing the same, and lamp
#1310Group-III nitride semiconductor light emitting device and production method thereof, and lamp
#1311Semiconductor light emitting device and method for manufacturing the same
#1312Light emitting device and light emitting device package for improving a light emission efficency
#1313SEMICONDUCTOR LIGHT EMITTING DEVICE
#1314Method for improving internal quantum efficiency of group-III nitride-based light emitting device
#1315Method for producing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp
#1316Compound semiconductor device using SiC substrate and its manufacture
#1317Semiconductor device, its manufacture method and template substrate
#1318Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface
#1319Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations
#1320III-NITRIDE LIGHT EMITTING DEVICE WITH CURVAT1JRE CONTROL LAYER
#1321Epitaxial formation structures and associated methods of manufacturing solid state lighting devices
#1322Light emitting devices and methods of manufacturing the same
#1323Diode having vertical structure and method of manufacturing the same
#1324Nitride semi-conductive light emitting device
#1325Nitride semiconductor wafer, nitride semiconductor chip, method of manufacture thereof, and semiconductor device
#1326Nitride semiconductor LED and fabrication method thereof
#1327Selective decomposition of nitride semiconductors to enhance LED light extraction
#1328Substrate structures and methods of manufacturing the same
#1329Semiconductor light emitting device
#1330Semiconductor substrate and method for manufacturing the same
#1331Light-emitting element
#1332Nitride semiconductor light-emitting device including a buffer layer on a substrate and method for manufacturing the same
#1333Ultraviolet light emitting diode/laser diode with nested superlattice
#1334COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE
#1335GaN-based semiconductor light emitting device
#1336Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)
#1337Low resistance ultraviolet light emitting device and method of fabricating the same
#1338Fabrication method of gallium nitride-based compound semiconductor
#1339Method for producing group III nitride semiconductor light-emitting device
#1340III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
#1341Semiconductor material, method of making the same, and semiconductor device
#1342Compound semiconductors
#1343Group III nitride semiconductor light emitting device and production method thereof, and lamp
#1344Controlling pit formation in a III-nitride device
#1345Semiconductor substrate having a flexible, heat resistant, graphite substrate
#1346Method for manufacturing light emitting device using non-polar substrate
#1347Semiconductor substrate, semiconductor device, and manufacturing methods thereof
#1348Diamond GaN devices and associated methods
#1349Diode having vertical structure and method of manufacturing the same
#1350Method of fabricating vertical structure LEDs
#1351LIGHT-EMITTING DIODE, METHOD FOR MAKING LIGHT-EMITTING DIODE, INTEGRATED LIGHT-EMITTING DIODE AND METHOD FOR MAKING INTEGRATED LIGHT-EMITTING DIODE, METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, AND LIGHT-EMITTING DIODE DISPLAY AND ELECTRONIC DEVICE
#1352Light emitting device and light emitting device package having the same
#1353GROUP III NITRIDE SEMICONDUCTOR DEVICE AND LIGHT-EMITTING DEVICE USING THE SAME
#1354Thick pseudomorphic nitride epitaxial layers
#1355Semiconductor light emitting device growing active layer on textured surface
#1356Micro-pixel ultraviolet light emitting diode
#1357Devices formed from a non-polar plane of a crystalline material and method of making the same
#1358Nitride-based semiconductor light-emitting device and method for fabricating the same
#1359SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
#1360GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND LAMP
#1361Non-polar ultraviolet light emitting device and method for fabricating same
#1362Nitride semiconductor light emitting device and method of manufacturing the same
#1363Strain balanced light emitting devices
#1364Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
#1365Metalized Silicon Substrate for Indium Gallium Nitride Light-Emitting Diodes
#1366Nitride semiconductor device
#1367Selective decomposition of nitride semiconductors to enhance LED light extraction
#1368Light emitting diode and fabrication method thereof
#1369Light emitting diode
#1370COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE
#1371NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR
#1372Method for manufacturing gallium oxide based substrate, light emitting device, and method for manufacturing the light emitting device
#1373Light emitting device and method of manufacturing the same
#1374LED Epitaxial Wafer with Patterned GaN based Substrate and Manufacturing Method For the Same
#1375Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element
#1376LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME
#1377Nitride semiconductor LED using a hybrid buffer layer and a fabrication method therefor
#1378Diode having vertical structure and method of manufacturing the same
#1379Nitride semiconductor substrate
#1380Method for blocking dislocation propagation of semiconductor
#1381Light-emitting device having a patterned surface
#1382Semiconductor light emitting device and manufacturing method therefor
#1383Zinc sulfide substrates for group III-nitride epitaxy and group III-nitride devices
#1384Semiconductor light emitting device having textured structure and method of manufacturing the same
#1385Nitride semiconductor and method for manufacturing thereof
#1386Semiconductor light emitting diode having high efficiency and method of manufacturing the same
#1387Semiconductor light emitting devices grown on composite substrates
#1388Light-emitting element capable of increasing amount of light emitted, light-emitting device including the same, and method of manufacturing light-emitting element and light-emitting device
#1389Method of manufacturing group-III nitride semiconductor light emitting device, group III nitride semiconductor light emitting device and lamp
#1390Light emitting diode having a first GaN layer and a first semiconductor layer each having a predetermined thickness and fabrication method therof
#1391NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THEREOF
#1392Group III-nitride semiconductor thin film, method for fabricating the same, and group III-nitride semiconductor light emitting device
#1393Nitride LEDs based on thick templates
#1394III-nitride based semiconductor structure with multiple conductive tunneling layer
#1395Light emitting diode having algan buffer layer and method of fabricating the same
#1396Utlraviolet light emitting devices and methods of fabrication
#1397Method for producing group III nitride semiconductor layer, group III nitride semiconductor light-emitting device, and lamp
#1398Nitride semiconductor LED and fabrication method thereof
#1399Diode having high brightness and method thereof
#1400Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element
#1401Semiconductor light emitting device having patterned substrate
#1402Stress-alleviation layer for LED structures
#1403Light emitting diode and method for manufacturing the same
#1404SEMICONDUCTOR LIGHT-EMITTING DEVICE
#1405Group III nitride-based compound semiconductor light-emitting device and production method therefor
#1406Semiconductor light emitting device including graded region
#1407Method of growing nitride single crystal and method of manufacturing nitride semiconductor light emitting device
#1408Light emitting diode structure and method for fabricating the same
#1409Silicon based solid state lighting
#1410LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME
#1411GROUP III NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE AND PRODUCTION METHOD THEREOF
#1412Method for producing group III nitride semiconductor light emitting device, group III nitride semiconductor light emitting device, and lamp
#1413METALLIZED SILICON SUBSTRATE FOR INDIUM GALLIUM NITRIDE LIGHT EMITTING DIODE
#1414Light emitter device
#1415Method of fabricating vertical structure LEDs
#1416Method of manufacturing nitride semiconductor and nitride semiconductor element
#1417Semiconductor light emitting device
#1418NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
#1419Group-III nitride epitaxial layer on silicon substrate
#1420GaN semiconductor device
#1421Method of controlling stress in gallium nitride films deposited on substrates
#1422GaN based semiconductor light-emitting device and method for producing same
#1423Device manufacturing method
#1424Semiconductor device
#1425GaN based semiconductor light-emitting device and method for producing same
#1426GaN-based semiconductor light emitting device
#1427GROUP-III NITRIDE COMPOUND SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF, GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF, AND LAMP
#1428Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same
#1429Semiconductor light emitting device and method of manufacturing the same
#1430Semiconductor light emitting device including first conductive type clad layer
#1431Semiconductor device, method of manufacturing the same, and substrate for manufacturing the same
#1432Semiconductor device
#1433Compound semiconductor device using SiC substrate and its manufacture
#1434NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
#1435Nitride semiconductor light emitting device and fabrication method thereof
#1436Light emitting semiconductor device having an improved outward luminosity efficiency and fabrication method for the light emitting semiconductor device
#1437Light emitting diode structure and method for fabricating the same
#1438Method of Manufacturing Compound Semiconductor Devices
#1439Nitride semiconductor element and process for producing the same
#1440Semiconductor light emitting device and a method of manufacturing the same
#1441III-nitride light emitting device including porous semiconductor layer
#1442Semiconductor light emitting device having multiple single crystalline buffer layers
#1443Semiconductor light emitting device and method of manufacturing the same
#1444Method of manufacturing a semiconductor device having a group-III nitride superlattice layer on a silicon substrate
#1445Nitride-based light-emitting device
#1446Semiconductor light emitting element having a single defect concentrated region and a light emitting which is not formed on the single defect concentrated region
#1447Nitride Semiconductor Device and Method for Manufacturing the Same
#1448Methods for forming crystalline thin-film photovoltaic structures
#1449Light emitting diode with embedded saw-tooth multilayer having a photonic crystal structure and process for fabricating the same
#1450CRYSTALLINE THIN-FILM PHOTOVOLTAIC STRUCTURES
#1451PERIODICALLY STRUCTURED SUBSTRATE AND LIGHT EMITTING DEVICE INCLUDING THE SAME
#1452High Efficiency Dilute Nitride Light Emitting Diodes
#1453Gallium nitride materials and methods
#1454Method For Producing Group III-V Nitride Semiconductor Substrate
#1455SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF FABRICATING THE SAME
#1456EPITAXIAL SUBSTRATE AND MANUFACTURING METHOD THEREOF AND MANUFACTURING METHOD OF LIGHT EMITTING DIODE APPARATUS
#1457Semiconductor light emitting device and method for manufacturing the same
#1458NITRIDE-BASED LIGHT EMITTING DEVICE
#1459Vertical topology light emitting device using a conductive support structure
#1460(Al,In,Ga,B)N device structures on a patterned substrate
#1461Nitride semiconductor light emitting device and fabrication method therefor
#1462Nitride semiconductor LED and fabrication method thereof
#1463Light optoelectronic device and forming method thereof
#1464Optical semiconductor device and method for manufacturing the same
#1465SEMICONDUCTOR SUBSTRATE WITH NITRIDE-BASED BUFFER LAYER FOR EPITAXY OF SEMICONDUCTOR OPTO-ELECTRONIC DEVICE AND FABRICATION THEREOF
#1466Zinc-blende nitride semiconductor free-standing substrate, method for fabricating same, and light-emitting device employing same
#1467Semiconductor light-emitting device with selectively formed buffer layer on substrate
#1468Light emitting diode having algan buffer layer and method of fabricating the same
#1469III-Nitride Device Grown on Edge-Dislocation Template
#1470Display device and manufacturing method thereof
#1471Semiconductor light-emitting device with low-density defects and method of fabricating the same
#1472Optoelectronic device
#1473Semiconductor light emitting device and illuminating device using it
#1474Semiconductor light emitting device and method of manufacturing the same
#1475Light emitting diode, optoelectronic device and method of fabricating the same
#1476Semiconductor light emitting device having conductive substrate
#1477Semiconductor light emitting device and method of manufacturing the same
#1478Nitride Semiconductor Device and Method for Growing Nitride Semiconductor Crystal Layer
#1479Silicon based solid state lighting
#1480METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE SUBSTRATE
#1481Semiconductor light-emitting element and substrate used in formation of the same
#1482Light-Emitting Diode Incorporating an Array of Light Extracting Spots
#1483Gallium nitride-based semiconductor stacked structure
#1484Method of growing gan crystal on silicon substrate, and light emitting device and method of manufacturing thereof
#1485System and Method For Phototherapy With Semiconductor Light-Emitting Element
#1486Light emitting device and method for making the same
#1487Method for Growth of Gan Single Crystal, Method for Preparation of Gan Substrate, Process for Producing Gan-Based Element, and Gan-Based Element
#1488Semiconductor Light Emitting Device Including Oxide Layer
#1489Light emitting device and method for manufacturing the same
#1490Semiconductor device, its manufacture method and template substrate
#1491Semiconductor Device and Method of Fabricating the Same
#1492Nitride semiconductor light emitting device
#1493Light emitting diode having well and/or barrier layers with superlattice structure
#1494Method of forming nitride semiconductor layer on patterned substrate and light emitting diode having the same
#1495Method for fabricating high-quality semiconductor light-emitting devices on silicon substrates
#1496Semiconductor wafer, devices made therefrom, and method of fabrication
#1497Nitride semiconductor device
#1498DISTRIBUTED FEEDBACK LASERS FORMED VIA ASPECT RATIO TRAPPING
#1499Thick pseudomorphic nitride epitaxial layers
#1500Semiconductor light emitting device and a method for manufacturing the same