209058 ⎘
Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory; Details; Electrodes adapted for electric field or current focusing, e.g. tip shaped
Programmable resistive memory cell with filament placement structure
#302Multilevel-cell memory structures employing multi-memory layers with tungsten oxides and manufacturing method
#303Phase change memory device having an inversely tapered bottom electrode
#304Integrated circuit
#305Method to reduce a via area in a phase change memory cell
#306Phase-change semiconductor device and methods of manufacturing the same
#307Contact for memory cell
#308METHOD OF FORMING A STRUCTURE HAVING A GIANT RESISTANCE ANISOTROPY OR LOW-K DIELECTRIC
#309RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
#310Nanoscale electrodes for phase change memory devices
#311MEMORY DEVICES WITH CONCENTRATED ELECTRICAL FIELDS
#312Non-volatile memory cell with enhanced filament formation characteristics
#313Resistive memory device and method for fabricating the same
#314Resistive memory device and method of fabricating the same
#315Phase-change memory element
#316Nonvolatile memory element comprising a resistance variable element and a diode
#317Nanostructures and a Method for the Manufacture of the Same
#318Integrated circuit with upstanding stylus
#319RESISTANCE RAM DEVICE HAVING A CARBON NANO-TUBE AND METHOD FOR MANUFACTURING THE SAME
#320Resistor with improved switchable resistance and non-volatile memory device
#321Field-enhanced programmable resistance memory cell
#322Resistive changing device
#323Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
#324Memory cell having improved mechanical stability
#325Memory device
#326Integrated circuit including an electrode having an outer portion with greater resistivity
#327Phase change memory device and fabrication method thereof
#328Variable resistive element, and its manufacturing method
#329Electric device with a layer of conductive material contacted by nanowires
#330High density chalcogenide memory cells
#331Memory devices, stylus-shaped structures, electronic apparatuses, and methods for fabricating the same
#332Phase change memory device with a novel electrode
#333METHOD TO ENHANCE PERFORMANCE OF COMPLEX METAL OXIDE PROGRAMMABLE MEMORY
#334Memory cell with memory element contacting an inverted T-shaped bottom electrode
#335Reproducible resistance variable insulating memory devices having a shaped bottom electrode
#336Method of forming a small contact in phase-change memory
#337Memory devices having contact features
#338Phase change memory element
#339Resistance variable memory device with nanoparticle electrode and method of fabrication
#340Self aligned ring electrodes
#341Method of producing phase change memory device
#342Method for making a self-converged void and bottom electrode for memory cell
#343Method of producing phase change memory device
#344Low area contact phase-change memory
#345Phase change memory structures
#346Phase change memory structures including pillars
#347Integrated Circuits; Methods for Manufacturing an Integrated Circuit and Memory Module
#348PHASE-CHANGE MEMORY ELEMENT
#349High density chalcogenide memory cells
#350Phase change memory devices and fabrication methods thereof
#351Resistor random access memory structure having a defined small area of electrical contact
#352Solid state electrolyte memory device and method of fabricating the same
#353Methods of forming phase change memory devices having bottom electrodes
#3544F2 self align fin bottom electrodes FET drive phase change memory
#355Current constricting phase change memory element structure
#356Integrated circuit including spacer defined electrode
#357Resistance memory element and method of manufacturing the same
#358Phase change memory including a plurality of electrically conductive bodies, and manufacturing method thereof
#359Variable resistance memory device having reduced bottom contact area and method of forming the same
#360METHOD OF FABRICATING SEMICONDUCTOR MEMORY DEVICE HAVING SELF-ALIGNED ELECTRODE, RELATED DEVICE AND ELECTRONIC SYSTEM HAVING THE SAME
#361Phase changeable memory devices
#362Air cell thermal isolation for a memory array formed of a programmable resistive material
#363Method of making integrated circuit (IC) including at least one storage cell
#364Memory devices having electrodes comprising nanowires, systems including same and methods of forming same
#365Uplink routing without routing table
#366Resistive memory and method
#367Programmable resistance memory element and method for making same
#368Nonvolatile memory element and production method thereof and storage memory arrangement
#369Memory cell with memory element contacting ring-shaped upper end of bottom electrode
#370Methods of Forming Carbon Nano-Tube Wires on a Catalyst Metal Layer and Related Methods of Wiring Semiconductor Devices Using Such Carbon Nano-Tube Wires
#371Multilevel-cell memory structures employing multi-memory with tungsten oxides and manufacturing method
#372Phase change random access memory device with transistor, and method for fabricating a memory device
#373Method for making a self-converged void and bottom electrode for memory cell
#374Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
#375Bottom electrode geometry for phase change memory
#376PHASE CHANGE MEMORY DEVICE WITH HOLE FOR A LOWER ELECTRODE DEFINED IN A STABLE MANNER AND METHOD FOR MANUFACTURING THE SAME
#377Phase change memory cell having a sidewall contact
#378Resistive random access memory having a solid solution layer and method of manufacturing the same
#379Phase change memory devices having dual lower electrodes
#380Embedded RF environmental evaluation tool to gauge RF transceivers performance need
#381Discovery phase in a frequency hopping network
#382Phase-change memory and method of manufacturing the same
#383Storage nodes, phase change memory devices, and methods of manufacturing the same
#384Resistance variable devices with controllable channels
#385Forming sublithographic heaters for phase change memories
#386Cell isolation through quasi-orthogonal sequences in a frequency hopping network
#387Number of sons management in a cell network
#388Real time clock distribution and recovery
#389Traffic load control in a mesh network
#390Crystal drift compensation in a mesh network
#391Use of minimal propagation delay path to optimize a mesh network
#392Broadcast acknowledgement in a network
#393Beacon requests and RS bit resolving circular routes
#394Downlink routing mechanism
#395Cell size management
#396Outage notification system
#397Controllable ovonic phase-change semiconductor memory device and methods of programming the same
#398Memory elements
#399Memory cell having active region sized for low reset current and method of fabricating such memory cells
#400Phase change memory cells and methods for fabricating the same
#401SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME
#402Programmable resistive memory cell with a programmable resistance layer
#403RESISTIVE MEMORY DEVICE
#404High density chalcogenide memory cells
#405Common word line edge contact phase-change memory
#406Contact for memory cell
#407Phase-change memory device and methods of fabricating the same
#408Phase change memory device and method of manufacture thereof
#409Nanotip electrode non-volatile memory resistor cell
#410Small electrode for resistance variable devices
#411Phase change memory and method therefor
#412Connection electrode for phase change material, associated phase change memory element, and associated production process
#413Vertical interconnect structure, memory device and associated production method
#414Electrically rewritable non-volatile memory element and method of manufacturing the same
#415Method for fabricating chalcogenide-applied memory
#416Resistance variable memory device with nanoparticle electrode and method of fabrication
#417Reproducible resistance variable insulating memory devices having a shaped bottom electrode
#418Method of forming a contact structure
#419Phase-change memory device including nanowires and method of manufacturing the same
#420Resistivity changing memory cell having nanowire electrode
#421Phase-change semiconductor device and methods of manufacturing the same
#422Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof
#423Phase change memory and manufacturing method thereof
#424Methods for forming phase-change memory devices
#425Semiconductor memory device with three dimensional solid electrolyte structure, and manufacturing method thereof
#426Phase change memory device and method of manufacture thereof
#427Phase change memory devices and fabrication methods thereof
#428Non-volatile memory resistor cell with nanotip electrode
#429Method of forming a small contact in phase-change memory and a memory cell produced by the method
#430Chalcogenide random access memory
#431Small electrode for resistance variable devices
#432Resistance variable devices with controllable channels
#433Phase changeable memory cells and methods of forming the same
#434I-shaped and L-shaped contact structures and their fabrication methods
#435Non-volatile memory element and production method thereof and storage memory arrangement
#436Common word line edge contact phase-change memory
#437Phase change memory with ovonic threshold switch
#438Method of forming a phase change memory device having a small area of contact
#439Conductive line for a semiconductor device using a carbon nanotube including a memory thin film and semiconductor device manufactured
#440Fabricating memory components (PCRAMS) including memory cells based on a layer that changes phase state
#441Field-enhanced programmable resistance memory cell
#442Resistor with improved switchable resistance and non-volatile memory device
#443Phase-change random access memory device and method for manufacturing the same
#444Phase changeable memory cells and methods of fabricating the same
#445Reduced active area in a phase change memory structure
#446Forming tapered lower electrode phase-change memories
#447Memory device electrode with a surface structure
#448Variable resistance element, method of manufacturing the element, memory containing the element, and method of driving the memory
#449Memory devices having sharp-tipped phase change layer patterns
#450Field emission phase change diode memory
#451Phase change tip storage cell
#452Integrated circuit with upstanding stylus
#453Memory device and method of operating same
#454Method of fabrication of non-volatile memory
#455Memory device with discrete layers of phase change memory material
#456Non-volatile memory
#457Phase change memory device employing thermal-electrical contacts with narrowing electrical current paths
#458Multilayered phase change memory
#459Memory device containing selector with current focusing layer and methods of making the same
#460Memory device and a method for forming the memory device
#461Resistive random access memory device