209058 ⎘
Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory; Details; Electrodes adapted for electric field or current focusing, e.g. tip shaped
Tunable resistive random access memory cell
#2RESISTIVE SWITCHING MEMORY CELL
#3Semiconductor structure and method of manufacture
#4SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF
#5RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR MANUFACTURING THE SAME
#6Semiconductor memory devices having an electrode with an extension
#7Resistive random access memory device having needle-like-shaped top electrode region and method for fabricating the same
#8Filament confinement in resistive random access memory
#9Via structure and methods of forming the same
#10Memory cells and methods for forming memory cells
#11RESISTIVE RANDOM ACCESS MEMORY DEVICE
#12Semiconductor memory devices with electrically isolated stacked bit lines and methods of manufacture
#13VERTICAL MEMORY DEVICES
#14Integrated phase change memory cell projection liner and etch stop layer
#15MEMORY DEVICES AND METHOD OF FORMING THE SAME
#16Resistive switching memory cell
#17Resistive switching memory cell
#18Fill-in confined cell PCM devices
#19Resistive random access memory devices
#20Memory cells with asymmetrical electrode interfaces
#21Method for controlling current path by using electric field, and electronic element
#22Confining filament at pillar center for memory devices
#23VIA structure and methods of forming the same
#24Set-while-verify circuit and reset-while verify circuit for resistive random access memory cells
#25Memory including a selector switch on a variable resistance memory cell
#26Variable resistance memory devices implementing two-dimensional transition metal dichalcogenide materials
#27Tapered memory cell profiles
#28Nonvolatile memory cells having an embedded selection element and nonvolatile memory cell arrays including the nonvolatile memory cells
#29Phase change memory cell with second conductive layer
#30Memory cell and method of forming the same
#31Vertical memory devices
#32Step height mitigation in resistive random access memory structures
#33Horizontal memory array structure with scavenger layer
#34RRAM cell structure with laterally offset BEVA/TEVA
#35RESISTIVE RANDOM ACCESS MEMORY (RRAM) DEVICES EMPLOYING BOUNDED FILAMENT FORMATION REGIONS, AND RELATED METHODS OF FABRICATING
#36Confining filament at pillar center for memory devices
#37Memory cells with asymmetrical electrode interfaces
#38Resistance variable memory device with nanoparticle electrode and method of fabrication
#39Semiconductor devices and related methods
#40High-density field-enhanced ReRAM integrated with vertical transistors
#41Memory cells with asymmetrical electrode interfaces
#42Planar single-crystal phase change material device
#43Controlling filament formation and location in a resistive random-access memory device
#44Switching resistor and method of making such a device
#45VIA structure and methods of forming the same
#46Tapered memory cell profiles
#47Memory including a selector switch on a variable resistance memory cell
#48Resistive memory and method for fabricating the same and applications thereof
#49Vertical and planar RRAM with tip electrodes and methods for producing the same
#50Dedicated contacts for controlled electroforming of memory cells in resistive random-access memory array
#51Tapered memory cell profiles
#52Memory cells with asymmetrical electrode interfaces
#53Memory device and method of fabricating the same
#54Dedicated contacts for controlled electroforming of memory cells in resistive random-access memory array
#55High-density field-enhanced ReRAM integrated with vertical transistors
#56Variable resistance memory device and method of manufacturing the same
#57Apparatuses including memory devices and related electronic systems
#58Resistive random access memory with metal fin electrode
#59VIA structure and methods of forming the same
#60Resistive random access memory device for 3D stack and memory array using the same and fabrication method thereof
#61RRAM cell structure with laterally offset BEVA/TEVA
#62Semiconductor devices and related methods
#63Methods For Writing To An Array Of Resistive Random Access Memory Cells
#64Architectures and layouts for an array of resistive random access memory cells and read and write methods thereof
#65Tip-contact controlled three dimensional (3D) vertical self select memory
#66Variable resistance memory devices and methods of forming the same
#67Resistance variable memory device with nanoparticle electrode and method of fabrication
#68THRESHOLD SWITCHING DEVICE
#69Sidewall-Type Memory Cell
#70Resistive Memory Cell With Sloped Bottom Electrode
#71Memory including a selector switch on a variable resistance memory cell
#72Method of manufacturing a memory device
#73MEMRISTOR AND METHOD OF PRODUCTION THEREOF
#74Ion-based nanoelectric memory
#75Preparation method of Cu-based resistive random access memory, and memory
#76Resistive random access memory device having nano-scale tip and nanowire, memory array using the same and fabrication method thereof
#77Methods of operating memory devices and electronic systems
#78Scaled cross bar array with undercut electrode
#79Resistance change memory device
#80Variable resistance memory device and method of manufacturing the same
#81Resistive random access memory device
#82Memory device
#83RRAM cell with PMOS access transistor
#84Memory cell structures
#85Resistive memory with bird beak shaped structure method for fabricating the same and applications thereof
#86Semiconductor devices, memory devices, and related methods
#87VARIABLE-RESISTANCE ELEMENT AND METHOD OF MANUFACTURING VARIABLE-RESISTANCE ELEMENT AND SEMICONDUCTOR DEVICE
#88Semiconductor memory device and method for manufacturing the same
#89Resistive random access memory and manufacturing method thereof
#90RRAM cell structure with laterally offset BEVA/TEVA
#91RESISTIVE RAM CELL WITH FOCUSED ELECTRIC FIELD
#92Methods of forming memory devices having electrodes comprising nanowires
#93Semiconductor device and method of fabricating the same
#94Resistive memory devices with a multi-component electrode
#95Memristor and method of production thereof
#96Memory device
#97Sidewall-type memory cell
#98Resistive random access memory
#99Resistive memory device with semiconductor ridges
#100Apparatus having first and second switching materials
#101Resistive memory cell having a single bottom electrode and two top electrodes
#102V-SHAPE RESISTIVE MEMORY ELEMENT
#103Memory cell structures
#104Structure and formation method of memory device
#105SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE
#106Resistive memory cell having a reduced conductive path area
#107Resistive Memory Cell With Sloped Bottom Electrode
#108Resistive memory device having field enhanced features
#109Concave word line and convex interlayer dielectric for protecting a read/write layer
#110Concave word line and convex interlayer dielectric for protecting a read/write layer
#111Low form voltage resistive random access memory (RRAM)
#112Method for forming RRAM cell including V-shaped structure
#113RESISTIVE RANDOM ACCESS MEMORY DEVICE HAVING NANO-SCALE TIP AND NANOWIRE, MEMORY ARRAY USING THE SAME AND FABRICATION METHOD THEREOF
#114Resistive random access memory device having a nano-scale tip, memory array using the same and fabrication method thereof
#115Resistive random access memory cell structure
#116Memory including a selector switch on a variable resistance memory cell
#117Resistance variable memory device with nanoparticle electrode and method of fabrication
#118Method for forming resistive memory cell having a spacer region under an electrolyte region and a top electrode
#119Memory structure having top electrode with protrusion
#120MEMRISTORS WITH ASYMMETRIC ELECTRODES
#121Memory cells
#122Highly reliable nonvolatile memory and manufacturing method thereof
#123Switching element having overlapped wiring connections and method for fabricating semiconductor switching device
#124Resistance-switching memory cell with multiple raised structures in a bottom electrode
#125RRAM cell structure with laterally offset BEVA/TEVA
#126Non-volatile semiconductor memory device
#127Resistive memory cell having a reduced conductive path area
#128Resistive memory cell with sloped bottom electrode
#129Resistive memory cell with bottom electrode having a sloped side wall
#130Resistive memory cell having a reduced conductive path area
#131Memory cell structures
#132Semiconductor memory device and manufacturing method thereof
#133Nonvolatile memory devices
#134Resistance memory device
#135Resistive memory and method for fabricating the same
#136Resistive random access memory (RRAM) with improved forming voltage characteristics and method for making
#137Resistive random access memory cell structure with reduced programming voltage
#138Variable resistance element, semiconductor device having variable resistance element, semiconductor device manufacturing method, and programming method using variable resistance element
#139RRAM cell structure with laterally offset BEVA/TEVA
#140Resistive random access memory and manufacturing method thereof
#141Resistive random access memory and manufacturing method thereof
#142Memory devices having electrodes comprising nanowires
#143Resistance variable memory device with nanoparticle electrode and method of fabrication
#144Nano-scale electrical contacts, memory devices including nano-scale electrical contacts, and related structures and devices
#145Nonvolatile memory element and method of manufacturing the same
#146Resistive memory with small electrode and method for fabricating the same
#147SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE
#148Structures for resistance random access memory and methods of forming the same
#149On/off ratio for nonvolatile memory device and method
#150Memory structures, memory arrays, methods of forming memory structures and methods of forming memory arrays
#151ETCH bias homogenization
#152Non-volatile memory device having multi-level cells and method of forming the same
#153Variable resistance memory device and method of fabricating the same
#154Disturb-resistant non-volatile memory device using via-fill and etchback technique
#155Semiconductor device and method for fabricating the same, and microprocessor, processor, system, data storage system and memory system including the semiconductor device
#156Nonvolatile memory cells and methods of forming nonvolatile memory cells
#1573D variable resistance memory device having junction FET and driving method thereof
#158Field focusing features in a ReRAM cell
#159Sidewall type memory cell
#160Resistive memory cell with trench-shaped bottom electrode
#161Resistive memory cell with trench-shaped bottom electrode
#162Low form voltage resistive random access memory (RRAM)
#163Resistance memory device
#164Method for forming resistance-switching memory cell with multiple electrodes using nano-particle hard mask
#165Resistance-switching memory cell with multiple raised structures in a bottom electrode
#166Interactive greeting card
#167Methods of operating a phase change memory cell
#168Electronic memory device having an electrode made of a soluble material
#169Memory cell structures
#170Methods of manufacturing semiconductor devices
#171Method and apparatus for forming a contact in a cell of a resistive random access memory to reduce a voltage required to program the cell
#172Memristors having at least one junction
#173Nonvolatile memory element, nonvolatile memory device, and methods of manufacturing the same
#174Nonvolatile memory
#175State changing device
#176Variable resistive element, and its manufacturing method
#177Methods of forming nano-scale pores, nano-scale electrical contacts, and memory devices including nano-scale electrical contacts, and related structures and devices
#178Memory arrays
#179Non-volatile memory device having multi-level cells and method of forming the same
#180Field focusing features in a ReRAM cell
#181Field focusing features in a ReRAM cell
#182Resistive memory device and method for fabricating the same
#183Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory
#184Etch bias homogenization
#185Semiconductor device and manufacturing method thereof
#186Resistive memory device and fabrication method thereof
#187Memories with cylindrical read/write stacks
#188Memory device with a textured lowered electrode
#189Methods of forming memory structures and methods of forming memory arrays
#190Non-volatile memory cell containing a nano-rail electrode
#191Contact for memory cell
#192Variable resistance element and method of manufacturing the same
#193Semiconductor memory device and manufacturing method thereof
#194Semiconductor device and manufacturing method thereof
#195Phase change memory electrode with sheath for reduced programming current
#196Memory device with a textured lowered electrode
#197Memory cell structures
#198Memory device
#199Variable resistance memory device having reduced bottom contact area and method of forming the same
#200Contact structure and method for variable impedance memory element
#201Semiconductor devices and methods of manufacturing the same
#202Vertical interconnect structure, memory device and associated production method
#203Memory devices and method of manufacturing the same
#204Forming sublithographic heaters for phase change memories
#205Variable resistance memory device and method of fabricating the same
#206Non volatile semiconductor memory device and manufacturing method thereof
#207Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory
#208Variable resistance element and manufacturing method thereof
#209Resistive-switching memory and fabrication method thereof
#210RESISTIVE SWITCHING MEMORY AND METHOD FOR MANUFACTURING THE SAME
#211Memory devices with enhanced isolation of memory cells, systems including same and methods of forming same
#212Resistive memory element and related control method
#213Nonvolatile memory device
#214On/off ratio for non-volatile memory device and method
#215Phase change memory cell structure
#216Resistor with improved switchable resistance and non-volatile memory device
#217Non-volatile memory having 3D array of read/write elements with vertical bit lines and select devices and methods thereof
#218Non-volatile memory having 3D array of read/write elements with low current structures and methods thereof
#219Memristors with asymmetric electrodes
#220OUTAGE NOTIFICATION SYSTEM
#221Method to reduce a via area in a phase change memory cell
#222Nonvolatile memory cells and methods of forming nonvolatile memory cell
#223Contact structure in a memory device
#224Resistance variable memory device with nanoparticle electrode and method of fabrication
#225Resistance random access memory element and method for making the same
#226Uplink routing without routing table
#227Beacon requests and RS bit resolving circular routes
#228Method of forming semiconductor device having self-aligned plug
#229Resistive memory and method
#230Reproducible resistance variable insulating memory devices and methods for forming same
#231On/off ratio for non-volatile memory device and method
#232Traffic load control in a mesh network
#233Nonvolatile stacked nand memory
#234Resistive memory and methods of processing resistive memory
#235Variable resistance memory device having reduced bottom contact area and method of forming the same
#236Nano-dimensional non-volatile memory cells
#237Method for making a bottom electrode geometry for phase change memory
#238Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method of manufacturing nonvolatile memory element
#239Methods of forming variable-resistance memory devices and devices formed thereby
#240Vertical interconnect structure, memory device and associated production method
#241Memristor with nanostructure electrodes
#242Memristor having a triangular shaped electrode
#243Cell isolation through quasi-orthogonal sequences in a frequency hopping network
#244DISCOVERY PHASE IN A FREQUENCY HOPPING NETWORK
#245Resistive memory and methods of processing resistive memory
#246NON-VOLATILE MEMORY CELL CONTAINING NANODOTS AND METHOD OF MAKING THEREOF
#247Embedded RF environmental evaluation tool to gauge RF transceivers performance need
#248Method of manufacturing semiconductor memory
#249Resistive memory device and method for fabricating the same
#250Nonvolatile memory device and method for manufacturing same
#251Nonvolatile memory element and production method thereof and storage memory arrangement
#252Structures for resistance random access memory and methods of forming the same
#253PHASE CHANGE MEMORY DEVICES AND FABRICATION METHODS THEREOF
#254Memory including a selector switch on a variable resistance memory cell
#255Programmable resistive memory cell with filament placement structure
#256Memory device
#257Programmable resistive memory cell with filament placement structure
#258Programmable resistance memory element
#259Phase Changeable Memory Devices
#260Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same
#261Memory devices having electrodes comprising nanowires, systems including same and methods of forming same
#262RESISTANCE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME
#263Reproducible resistance variable insulating memory devices and methods for forming same
#264Nonvolatile memory device and method for manufacturing same
#265Memory devices with enhanced isolation of memory cells, systems including same and methods of forming same
#266Method for forming a reduced active area in a phase change memory structure
#267PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING PHASE-CHANGE MEMORY DEVICE
#268Nonvolatile memory device and method of fabricating the same
#269Nonvolatile memory cells having phase changeable patterns therein for data storage
#270Resistance variable element
#271Use of minimal propagation delay path to optimize a mesh network
#272Memristor having a nanostructure in the switching material
#273Memristor with a non-planar substrate
#274Memristors with insulation elements and methods for fabricating the same
#275Phase change memory cell structure
#276Semiconductor memory device
#277Phase change memory structures
#278Real time clock distribution and recovery
#279Etching of tungsten selective to titanium nitride
#280Number of sons management in a cell network
#281Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
#282SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
#283Downlink routing mechanism
#284Memory device including an electrode having an outer portion with greater resistivity
#285Ring-shaped electrode and manufacturing method for same
#286Storage element, method of manufacturing same, and semiconductor storage device
#287Phase-change random access memory device
#288Diode structures and resistive random access memory devices having the same
#289Variable resistance element, semiconductor device, and method for manufacturing variable resistance element
#290Current constricting phase change memory element structure
#291Non-volatile memory cell and fabrication method thereof
#292Semiconductor memory device with three dimensional solid electrolyte structure, and manufacturing method thereof
#293Phase-Changeable Random Access Memory Devices Including Barrier Layers and Metal Silicide Layers
#294Conductive bridging random access memory device and method of manufacturing the same
#295PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME
#296Method fabricating nonvolatile memory device
#297Phase change memory devices having dual lower electrodes and methods of fabricating the same
#298Phase change memory with ovonic threshold switch
#299Non-volatile memory cells including small volume electrical contact regions
#300Memory cells including nanoporous layers containing conductive material