Methods for forming phase-change memory devices

Semiconductor memory device with three dimensional solid electrolyte structure, and manufacturing method thereof

Electric device with phase change material and parallel heater

Method for making tapered opening for programmable resistance memory element

Laminate structure, magnetic recording medium and method for producing the same, magnetic recording device, magnetic recording method, and element with the laminate structure

Phase-change memory device and manufacturing process thereof

Method for fabricating a resistive memory

Phase change memory devices and fabrication methods thereof

Phase-change RAM and method for fabricating the same

Phase change memory device and method of manufacture thereof

SnSe-based limited reprogrammable cell

Resistive memory element with shortened erase time

Precursor, thin layer prepared including the precursor, method of preparing the thin layer and phase-change memory device

Phase change memory devices and fabrication methods thereof

Phase change memory device

Phase change memory cell with high read margin at low power operation

Phase change memory cell with high read margin at low power operation

Integrated circuit having a memory including a low-k dielectric material for thermal isolation

Semiconductor device and a method of manufacturing the same

Method of fabricating a thin film

Deposition of multilayer structures including layers of germanium and/or germanium alloys

Chemical vapor deposition of chalcogenide materials

Pillar phase change memory cell

Integrated circuit including a memory apparatus and production method

Electric device comprising phase change material

Phase change memory and fabricating method thereof

Phase change memory cell with junction selector and manufacturing method thereof

Forming nonvolatile phase change memory cell having a reduced thermal contact area

Write-once nonvolatile phase change memory array

Horizontal chalcogenide element defined by a pad for use in solid-state memories

Semiconductor integrated circuit device

Phase change memory that switches between crystalline phases

Phase-change-type semiconductor memory device

Phase change memory device and method of manufacturing

Semiconductor memory cell and method of forming same

Phase changable memory device structures

Thin film layer, heating electrode, phase change memory including thin film layer and methods for forming the same

Phase-change multi-level cell and operating method thereof

Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation

Information recording medium and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Ge precursor, GST thin layer formed using the same, phase-change memory device including the GST thin layer, and method of manufacturing the GST thin layer

Phase-change memory device using chalcogenide compound as the material of memory cells

Method of producing a microelectronic electrode structure, and microelectronic electrode structure

Self-aligned small contact phase-change memory method and device

Phase change memory device having phase change material layer containing phase change nano particles and method of fabricating the same

Phase changeable memory cells and methods of forming the same

Programmable resistance memory element with threshold switching material

Multiple bit chalcogenide storage device

Method for manufacturing a resistively switching memory cell, manufactured memory cell, and memory device based thereon

Phase change memory cell with transparent conducting oxide for electrode contact material

Chalcogenide memory having a small active region

Semiconductor integrated circuit device and method of manufacturing the same

Phase changeable memory device and method of formation thereof

Side wall active pin memory and manufacturing method

Memory device including resistance change layer as storage node and method(s) for making the same

Electrically programmable memory element with improved contacts

Method for manufacturing a small pin on integrated circuits or other devices

Semiconductor and semiconductor manufacturing arrangements having a chalcogenide layer formed of columnar crystal grains perpendicular to a main substrate surface

Switching element, line-switching device and logic circuit

I-shaped and L-shaped contact structures and their fabrication methods

Forming planarized semiconductor structures

Circuit and method of controlling integrated circuit power consumption using phase change switches

Programmable matrix array with phase-change material

Programmable matrix array with phase-change material

Forming phase change memory cell with microtrenches

Multilevel phase-change memory, manufacture method and operating method thereof

Phase change memory device employing thermally insulating voids and sloped trench, and a method of making same

Integrated circuit including sub-lithographic structures

Multibit phase change memory device and method of driving the same

Phase change memory featuring ferromagnetic layers in contact with phase change layer

Increasing adherence of dielectrics to phase change materials

Multilevel phase-change memory, manufacturing and status transferring method thereof

Multilevel phase-change memory element and operating method

Methods of fabricating phase changeable semiconductor memory devices including multi-plug conductive structures and related devices

PRAMs having a plurality of active regions located vertically in sequence and methods of forming the same

Phase change memory with a select device having a breakdown layer

Phase change memory with ovonic threshold switch

Phase-changeable memory devices and methods of forming the same

Switching or amplifier device, in particular transistor

Resistive memory element

Reducing leakage currents in memories with phase-change material

One time programmable phase change memory

Controlled breakdown phase change memory device

Forming phase change memory arrays

Vertical elevated pore phase change memory

Memory circuit having memory cells which have a resistance memory element

Antimony precursor, phase-change memory device using the antimony precursor, and method of manufacturing the phase-change memory device

Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof

Method of forming a phase change memory device having a small area of contact

Fabricating memory components (PCRAMS) including memory cells based on a layer that changes phase state

PRAMS having phase-change layer pattern with electrode contact area and methods of forming the same

Method of forming via structures and method of fabricating phase change memory devices incorporating such via structures

Phase-changeable memory devices including an adiabatic layer

Methods of forming phase-change random access memories including a confined contact hole and integrated circuit devices including the same

Semiconductor device and method of fabricating the same

Methods for sputtering a target material by intermittently applying a voltage thereto and related apparatus, and methods of fabricating a phase-changeable memory device employing the same

Methods of forming metal contact structures and methods of fabricating phase-change memory devices using the same

Laser reflowing of phase changeable memory element to close a void therein

Phase change memory device with thermal insulating layers

Electric device with phase change material and method of manufacturing the same

Semiconductor devices having a planarized insulating layer and methods of forming the same

Memory device with switching glass layer

Phase change memory with extra-small resistors

Electrically programmable memory element with reduced area of contact

Memory device, programmable resistance memory cell and memory array

Phase-change memory device and method for manufacturing the same

Phase-change random access memory device and method for manufacturing the same

Phase-change memory device and method of manufacturing the same

Phase-change random access memory device and method for manufacturing the same

Phase-change random access memory device and method for manufacturing the same

Initializing phase change memories

Use of chalcogen plasma to form chalcogenide switching materials for nanoscale electronic devices

Programmable structure, an array including the structure, and methods of forming the same

Phase-changeable memory devices

Low-current and high-speed phase-change memory devices and methods of driving the same

Nanoscale programmable structures and methods of forming and using same

High-density phase change cell array and phase change memory device having the same

Semiconductor memory device and method for producing a semiconductor memory device

Process for manufacturing integrated resistor and phase-change memory element including this resistor

Programmable structure, an array including the structure, and methods of forming the same

Indirect switching and sensing of phase change memory cells

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Phase-change memory device having a barrier layer and manufacturing method

Phase-change memory device having a barrier layer and manufacturing method

Manufacturing method of a contact structure and phase change memory cell with elimination of double contacts

Methods for fabricating memory devices using sacrificial layers and memory devices fabricated by same

Phase random access memory with high density

Phase changeable memory cells and methods of fabricating the same

Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation

Methods of fabricating phase change memory elements having a confined portion of phase change material on a recessed contact

Phase-change memory cell and method of fabricating the phase-change memory cell

Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer

Memory device and storage apparatus

Methods of forming phase-change memory devices

Semiconductor memory cell, method for fabricating it and semiconductor memory device

Memory device with an active material embedded in an insulating material

Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method

Information recording medium and method for manufacturing the same

Semiconductor device

Electrically programmable memory element with reduced area of contact and method for making same

Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory cell and structures obtained thereby

Reduced active area in a phase change memory structure

Phase-changeable memory device and method of manufacturing the same

Phase change memory cell and method of its manufacture

Phase change access device for memories

Forming tapered lower electrode phase-change memories

Memory device electrode with a surface structure

Phase-change memory device and method of manufacturing the same

Small electrode for a chalcogenide switching device and method for fabricating same

Phase-change memory cell and method of fabricating the phase-change memory cell

Phase change memory devices including memory elements having variable cross-sectional areas

Non-volatile memory cell comprising a dielectric layer and a phase change material in series

Method of forming resistance variable devices

Multiple data state memory cell

Phase change memory and phase change recording medium

Phase change memory cell and manufacturing method thereof using minitrenches

Horizontal chalcogenide element defined by a pad for use in solid-state memories

Process for forming tapered trenches in a dielectric material

Lateral phase change memory and method therefor

Memory devices having sharp-tipped phase change layer patterns

Reducing shunts in memories with phase-change material

Phase change resistor cell and nonvolatile memory device using the same

Phase change resistor cell, nonvolatile memory device and control method using the same

Solid electrolyte switching device, FPGA using same, memory device, and method for manufacturing solid electrolyte switching device

Field emission phase change diode memory

Phase change tip storage cell

Integrated circuit with upstanding stylus

Memory device and method of operating same

Storage device

Method of fabrication of non-volatile memory

Information recording medium and method for manufacturing the same

Method of driving a non-volatile memory

Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target

Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change memory

Semiconductor integrated circuit device

Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same

Forming phase change memories

Methods of fabricating phase changeable memory devices having reduced cell areas

Phase-change memory device using chalcogenide compound as the material of memory cells

Spacer chalcogenide memory device

Programmable resistance memory element with threshold switching material

Phase change material memory device

Information recording medium and method for manufacturing the same

Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array manufactured thereby

Electrically programmable memory element

Chalcogenide phase-change non-volatile memory, memory device and method for fabricating the same

Spacer chalcogenide memory method

Information recording medium and method for manufacturing the same

Memory device with discrete layers of phase change memory material

Phase changeable layers including protruding portions in electrodes thereof and methods of forming same

Non-volatile memory

Method of fabricating a conductive path in a semiconductor device

Pore structure for programmable device

Method for making memory elements

Phase change memory device employing thermal-electrical contacts with narrowing electrical current paths

Process for defining a chalcogenide material layer, in particular in a process for manufacturing phase change memory cells

Controlling the location of conduction breakdown in phase change memories

Damascene phase change memory

Forming planarized semiconductor structures

Phase change recording film having high electric resistance and sputtering target for forming phase change recording film

Methods for fabrication for phase-changeable memory devices having phase-changeable material regions with lateral contacts

Multilayered phase change memory

Damascene conductive line for contacting an underlying memory element

Method and apparatus for forming an integrated circuit electrode having a reduced contact area

Phase change access device for memories

Reducing parasitic conductive paths in phase change memories

Lateral phase change memory

Processing phase change material to improve programming speed

Phase change memory devices having phase change area in porous dielectric layer

Resistance variable device

Information recording medium and method for producing the same

Information recording medium and method for producing the same

Phase-change memory device and manufacturing method thereof

Resistance variable memory elements and methods of formation

Programmable resistance memory element

Semiconductor memory device and method for fabricating the same

Programmable resistance memory element with multi-regioned contact

Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same

Self-aligned process for manufacturing a phase change memory cell and phase change memory cell thereby manufactured

Semiconductor logic circuits including a non-volatile memory cell

Memory Arrays

PCRAM analog programming by a gradual reset cooling step

Three-dimensional nonvolatile memory

Integrated resistive processing unit to avoid abrupt set of RRAM and abrupt reset of PCM

Single-sided liner PCM cell for 3D crossbar PCM memory

Phase-change material (PCM) radio frequency (RF) switches with stressor layers and contact adhesion layers

Low temperature film for PCRAM sidewall protection

Three-dimensional memory array

Transition metal doped germanium-antimony-tellurium (GST) memory device components and composition

PCM RF switch fabrication with subtractively formed heater

High reliability RF switch based on phase-change material

Manufacturing RF switch based on phase-change material

Confined phase change memory with double air gap

Phase change memory with gradual resistance change

Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same

Phase change memory and method of fabricating same

Electrostatic discharge protection devices including a field-induced switching element

Semiconductor memory capable of reducing an initial turn-on voltage of a memory cell using a stress pulse in a test mode, and method for driving the same

Memory device

P-Type chalcogenide and n-type silicon heterojunction infared photodiodes and method of manufacturing thereof

Three-dimensional cross rail phase change memory device and method of manufacturing the same

Drift mitigation with embedded refresh

Three-dimensional phase change memory arrays and methods of manufacturing the same

Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication

Tone inversion integration for phase change memory

Phase change memory electrode with multiple thermal interfaces

Static random access memory device and forming method thereof

Dielectric doped, Sb-rich GST phase change memory

Resistive memory device including a lateral air gap around a memory element and method of making thereof

Semiconductor device and method for fabricating the same

P-type chalcogenide and N-type silicon heterojunction infrared photodiodes and method of manufacturing thereof

Semiconductor structure

Phase change memory with high endurance

Self-selecting local bit line for a three-dimensional memory array

Memory having an interlayer insulating structure with different thermal resistance

Multi-level phase change device

Memory device

Memory device

Memory device and method of manufacturing the same

Hetero-switching layer in a RRAM device and method

Method to make phase-change material RF switches with thermal dielectrics