209066 ⎘
Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory; Selection of switching materials; Compounds of sulfur, selenium or tellurium, e.g. chalcogenides Tellurides, e.g. GeSbTe
Phase change memory and manufacturing method thereof
#2702Phase change memory cell and method and system for forming the same
#2703Phase-changeable memory device and method of manufacturing the same
#2704Memory cell device and method of manufacture
#2705Storage nodes, phase change memories including a doped phase change layer, and methods of operating and fabricating the same
#2706MEMORY DEVICE AND METHOD OF MAKING SAME
#2707Methods of manufacturing a phase-changeable memory device
#2708Methods of forming a semiconductor device including a phase change material layer
#2709INTEGRATED CIRCUIT WITH RESISTIVITY CHANGING MATERIAL HAVING A STEP-LIKE PROGRAMMING CHARACTERISTITIC
#2710Integrated circuit having memory having a step-like programming characteristic
#2711Controllable ovonic phase-change semiconductor memory device and methods of programming the same
#2712Memory elements
#2713Integrated circuit with memory having a step-like programming characteristic
#2714Phase change memory cell including nanocomposite insulator
#2715Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices
#2716Bottom electrode contacts for semiconductor devices and methods of forming same
#2717Method for making a pillar-type phase change memory element
#2718Memory cell having active region sized for low reset current and method of fabricating such memory cells
#2719Nonvolatile memory device and methods of operating and fabricating the same
#2720Method and apparatus for forming an integrated circuit electrode having a reduced contact area
#2721Semiconductor device and method of manufacturing the same
#2722Memory cell having a switching active material, and corresponding memory device
#2723Non-volatile phase-change memory and manufacturing method thereof
#2724Semiconductor memory device and fabrication method thereof
#2725Integrated circuit having a phase change memory cell including a narrow active region width
#2726Optimized solid electrolyte for programmable metallization cell devices and structures
#2727Electrically writable and erasable memory medium having a data element with two or more multiple-layer structures made of individual layers
#2728Memory cell with memory material insulation and manufacturing method
#2729Phase change memory device and fabrication method thereof
#2730Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement
#2731Sputter deposition method for forming integrated circuit
#2732Phase change memory with nanofiber heater
#2733PHASE CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF
#2734Reprogrammable fuse structure and method
#2735Phase change memory cells and methods for fabricating the same
#2736Methods of forming variable resistance memory cells, and methods of etching germanium, antimony, and tellurium-comprising materials
#2737Method for forming a memory device with at least one memory cell, in particular a phase change memory cell, and memory device
#2738Reflowing of a phase changeable memory element to close voids therein
#2739PHASE CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF
#2740Single-mask phase change memory element
#2741Nitrogenated carbon electrode for chalcogenide device and method of making same
#2742Phase-change memory device
#2743Resistor random access memory cell with reduced active area and reduced contact areas
#2744Refreshing a phase change memory
#2745Phase change memory cell
#2746Memory device, in particular phase change random access memory device with transistor, and method for fabricating a memory device
#2747Resistor random access memory cell with L-shaped electrode
#2748Novel chalcogenide material, switching device and array of non-volatile memory cells
#2749PHASE-CHANGE MEMORY DEVICE AND MANUFACTURING PROCESS THEREOF
#2750Multi-level memory cell having phase change element and asymmetrical thermal boundary
#2751Non-volatile electrical phase change memory device comprising interfacial control layer and method for the preparation thereof
#2752SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME
#2753Forming nonvolatile phase change memory cell having a reduced thermal contact area
#2754Memory architecture and cell design employing two access transistors
#2755Phase change memory cell employing a GeBiTe layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the same
#2756Phase-changeable memory device and method of manufacturing the same
#2757Multi-functional chalcogenide electronic devices having gain
#2758Memory cell including doped phase change material
#2759Memory using tunneling field effect transistors
#2760Memory device
#2761High density chalcogenide memory cells
#2762Semiconductor device
#2763Bridge resistance random access memory device with a singular contact structure
#2764Forming phase change memory arrays
#2765Structures and methods of a bistable resistive random access memory
#2766Self-aligned bipolar junction transistors
#2767Phase change memory element with a peripheral connection to a thin film electrode and method of manufacture thereof
#2768Transitioning the state of phase change material by annealing
#2769Phase-change memory cell adapted to prevent over-etching or under-etching
#2770Phase change memory
#2771Multilevel phase-change memory element and operating method
#2772Programming a normally single phase chalcogenide material for use as a memory or FPLA
#2773Memory having storage locations within a common volume of phase change material
#2774Integrated circuit including sidewall spacer
#2775Phase change memory elements using self-aligned phase change material layers and methods of making and using same
#2776Phase change memory cell with limited switchable volume
#2777Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed
#2778Phase change memory cell with vacuum spacer
#2779Semiconductor memory device and manufacturing method thereof
#2780Gap filling method and method for forming semiconductor memory device using the same
#2781Phase-changeable memory device and method of manufacturing the same
#2782Phase change memory device for optimized current consumption efficiency and operation speed and method of manufacturing the same
#2783Memory device and manufacturing method
#2784Phase change memory device having carbon nano tube lower electrode material and method of manufacturing the same
#2785Three dimensional programmable device and method for fabricating the same
#2786Method of making phase change memory device employing thermally insulating voids and sloped trench
#2787Three-terminal cascade switch for controlling static power consumption in integrated circuits
#2788Memory element with improved contacts
#2789Programmable via structure for three dimensional integration technology
#2790Contact for memory cell
#2791Phase change memory fabricated using self-aligned processing
#2792Phase change memory fabricated using self-aligned processing
#2793Forming ovonic threshold switches with reduced deposition chamber gas pressure
#2794Method of forming a phase changeable structure
#2795Thin film plate phase change RAM circuit and manufacturing method
#2796Phase-changeable memory devices including nitrogen and/or silicon dopants
#2797Reduced power consumption phase change memory and methods for forming the same
#2798Integrated circuit including resistivity changing material element
#2799Semiconductor memory
#2800METHOD FOR FORMING A MEMORY DEVICE AND MEMORY DEVICE
#2801Multi-layer phase-changeable memory devices
#2802Manufacturing method for pipe-shaped electrode phase change memory
#2803Phase-change memory device and methods of fabricating the same
#2804Phase change memory device and method of fabricating the same
#2805Electrical structure with a solid state electrolyte layer, memory with a memory cell and method for fabricating the electrical structure
#2806Electrode for phase change memory device and method
#2807Phase change memory fabricated using self-aligned processing
#2808Phase change memory device and method of manufacture thereof
#2809Phase change memory structure having an electrically formed constriction
#2810Storage node, phase change random access memory and methods of fabricating the same
#2811Phase change memory devices and methods for fabricating the same
#2812Phase change memory cell with high read margin at low power operation
#2813Phase changeable structure and method of forming the same
#2814ELECTRICAL FUSE DEVICE BASED ON A PHASE-CHANGE MEMORY ELEMENT AND CORRESPONDING PROGRAMMING METHOD
#2815Semiconductor device
#2816Phase change memory cell with high read margin at low power operation
#2817Method for forming a phase change device
#2818Phase change RAM including resistance element having diode function and methods of fabricating and operating the same
#2819Memory having nanotube transistor access device
#2820Thermal isolation of phase change memory cells
#2821Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds
#2822Compositions and methods for CMP of phase change alloys
#2823Vertical side wall active pin structures in a phase change memory and manufacturing methods
#2824Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram
#2825Embedded phase-change memory and method of fabricating the same
#2826Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories
#2827Semiconductor memory
#2828METHOD OF FORMING A PHASE-CHANGEABLE STRUCTURE
#2829Phase change memory device and method for manufacturing phase change memory device
#2830Electrically rewritable non-volatile memory element and method of manufacturing the same
#2831Phase change memory device
#2832Methods of forming phase change material thin films and methods of manufacturing phase change memory devices using the same
#2833Nonvolatile memory device
#2834Vacuum jacketed electrode for phase change memory element
#2835Self-align planerized bottom electrode phase change memory and manufacturing method
#2836Semiconductor memory device and method for fabricating the same
#2837Method for forming self-aligned thermal isolation cell for a variable resistance memory array
#2838Method for Fabricating a Pillar-Shaped Phase Change Memory Element
#2839Phase change current density control structure
#2840Manufacturing method for phase change RAM with electrode layer process
#2841Phase change memory and method therefor
#2842Multi-bit phase-change random access memory (PRAM) with diameter-controlled contacts and methods of fabricating and programming the same
#2843Chalcogenide layer etching method
#2844Information recording medium and method for manufacturing the same
#2845Phase-change memory device
#2846Phase-change memory device and its methods of formation
#2847Method of fabricating phase change RAM including a fullerene layer
#2848PCRAM device with switching glass layer
#2849Nonvolatile memory device and method of fabricating the same
#2850Method of manufacturing phase-change memory element
#2851Phase-change memory layer and method of manufacturing the same and phase-change memory cell
#2852Phase change memory device and fabricating method therefor
#2853Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array thereby manufactured
#2854Phase change memory and method for driving the same
#2855Phase change memory cell and manufacturing method
#2856Connection electrode for phase change material, associated phase change memory element, and associated production process
#2857Method of manufacturing non-volatile memory element
#2858Phase change memory cell and method of fabricating
#2859Forming phase change memories
#2860Damascene phase change RAM and manufacturing method
#2861Phase change memory device having semiconductor laser unit
#2862Vacuum jacket for phase change memory element
#2863Thin film fuse phase change cell with thermal isolation pad and manufacturing method
#2864Surface topology improvement method for plug surface areas
#2865Multiple data state memory cell
#2866Vacuum cell thermal isolation for a phase change memory device
#2867Electrically rewritable non-volatile memory element and method of manufacturing the same
#2868Phase change memory device and manufacturing method
#2869Resistive memory cell arrangement and a semiconductor memory including the same
#2870Phase change memory cell and manufacturing method
#2871Semiconductor memory device
#2872Phase-change memory device and method of manufacturing same
#2873Phase-change memory device and method of manufacturing same
#2874Lateral phase change memory with spacer electrodes
#2875Phase change material and non-volatile memory device using the same
#2876Memory cell device and manufacturing method
#2877Thermal isolation for an active-sidewall phase change memory cell
#2878Electrically rewritable non-volatile memory element
#2879Phase changeable memory cell array region and method of forming the same
#2880Method of manufacturing a pipe shaped phase change memory
#2881Method for manufacturing a resistively switching memory cell and memory device based thereon
#2882Phase change memory device and manufacturing method
#2883Thermally insulated phase change memory device
#2884Storage node, phase change memory device and methods of operating and fabricating the same
#2885Method of fabricating semiconductor memory device
#2886Damascene phase change memory
#2887I-shaped phase change memory cell
#2888Thermally contained/insulated phase change memory device and method (combined)
#2889Pipe shaped phase change memory
#2890Spacer electrode small pin phase change memory RAM and manufacturing method
#2891Vertical interconnect structure, memory device and associated production method
#2892Integrated circuit having resistive memory cells
#2893Chalcogenide PVD components and methods of formation
#2894Phase change memory cell including multiple phase change material portions
#2895Electrically rewritable non-volatile memory element and method of manufacturing the same
#2896Electrically rewritable non-volatile memory element and method of manufacturing the same
#2897Integrated circuit having an insulated memory
#2898Phase change memory having multilayer thermal insulation
#2899Forming a phase change memory with an ovonic threshold switch
#2900Electrically rewritable non-volatile memory element and method of manufacturing the same
#2901Lateral phase change memory
#2902Semiconductor memory
#2903Phase-change memory device and method of fabricating the same
#2904Phase change memory devices using magnetic resistance effect, methods of operating and methods of fabricating the same
#2905Phase change memory device and method of forming the same
#2906Method for producing a PCM memory element and corresponding PCM memory element
#2907Phase change memory devices with reduced programming current
#2908Reduced current phase-change memory device
#2909Phase change memory element with improved cyclability
#2910Lateral phase change memory
#2911Phase change memory device and method of manufacturing the device
#2912Memory device and method of making same
#2913Electrically rewritable non-volatile memory element and method of manufacturing the same
#2914Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target
#2915Self-aligned process for manufacturing a phase change memory cell and phase change memory cell thereby manufactured
#2916Electrode structure and method of manufacturing the same, phase-change memory device having the electrode structure and method of manufacturing the same
#2917Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device
#2918Phase change film for semiconductor nonvolatile memory and sputtering target for forming phase change film
#2919PHASE CHANGE MEMORY DEVICE AND METHOD OF MAKING SAME
#2920Phase change memory cell with tubular heater and manufacturing method thereof
#2921Phase change random access memory and method of operating the same
#2922Method of forming isolated features using pitch multiplication
#2923Memory device and method of making same
#2924Methods for forming arrays of small, closely spaced features
#2925Shaping a phase change layer in a phase change memory cell
#2926Memory cell contact using spacers
#2927Memory devices with buried lines
#2928Phase-change memory device and its methods of formation
#2929Chalcogenide devices and materials having reduced germanium or telluruim content
#2930Chalcogenide devices incorporating chalcogenide materials having reduced germanium or telluruim content
#2931Multi-layer chalcogenide devices
#2932Method of forming a contact structure
#2933Semiconductor device and method for manufacturing the same
#2934Phase change material for use in a phase change random access memory, the phase change material having uniformly distributed insulating impurities
#2935Method for fabricating an integrated device comprising a structure with a solid electrolyte
#2936Phase change memory cell and method of formation
#2937Phase change memory device and method of manufacturing the same
#2938Fabricating sub-lithographic contacts
#2939Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same
#2940Self-aligned process for manufacturing phase change memory cells
#2941Methods of forming phase change storage cells for memory devices
#2942Semiconductor device and method of producing the same
#2943Phase-change memory device including nanowires and method of manufacturing the same
#2944Resistivity changing memory cell having nanowire electrode
#2945Phase-change semiconductor device and methods of manufacturing the same
#2946Phase change random access memory
#2947Phase change memory device and method of fabricating the same
#2948Switchable resistive memory with opposite polarity write pulses
#2949Phase change memory with adjustable resistance ratio and fabricating method thereof
#2950Information recording medium
#2951Phase change material for high density non-volatile memory
#2952Integrated circuit having a resistive memory
#2953Phase change memory and phase change recording medium
#2954Method for manufacturing a narrow structure on an integrated circuit
#2955Manufacturing methods for thin film fuse phase change ram
#2956Thin film fuse phase change RAM and manufacturing method
#2957Methods of fabricating phase change memory cells having a cell diode and a bottom electrode self-aligned with each other
#2958Thin film fuse phase change cell with thermal isolation layer and manufacturing method
#2959Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof
#2960Phase change memory device and method for manufacturing the same
#2961Self-aligned, embedded phase change RAM
#2962Thin film plate phase change ram circuit and manufacturing method
#2963Phase change memory cell defined by imprint lithography
#2964Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method
#2965Methods for fabricating phase changeable memory devices
#2966Method of manufacturing a phase change RAM device utilizing reduced phase change current
#2967Storage device
#2968Method and structure for high performance phase change memory
#2969Programmable logic circuit and method of using same
#2970Vertical MOSFET transistor, in particular operating as a selector in nonvolatile memory devices
#2971Phase change memory device having an adhesion layer and manufacturing process thereof
#2972Phase change RAM device and method for manufacturing the same
#2973Reprogrammable fuse structure and method
#2974Phase change RAM device
#2975Electrically programmable memory element with reduced area of contact
#2976Phase change memory cell having ring contacts
#2977Phase change memory cell defined by a pattern shrink material process
#2978Methods of forming phase-changeable memory devices
#2979Phase change RAM device with increased contact area between word line and active area
#2980Phase change random access memory devices and methods of operating the same
#2981Semiconductor storage device and manufacturing method thereof
#2982Phase change memory device and method for manufacturing the same
#2983Lateral phase change memory and method therefor
#2984Small electrode for a chalcogenide switching device and method for fabricating same
#2985Phase change memory and manufacturing method thereof
#2986Low power phase change memory cell with large read signal
#2987Using conductive oxidation for phase change memory electrodes
#2988Method and structure for Peltier-controlled phase change memory
#2989Process for physical vapor deposition of a chalcogenide material layer and chamber for physical vapor deposition of a chalcogenide material layer of a phase change memory device
#2990Memory device
#2991Phase change memory devices and their methods of fabrication
#2992Method of operating a multi-terminal electronic device
#2993Memory device having serially connected resistance nodes
#2994Phase change memory cell defined by a pattern shrink material process
#2995Memory devices including spacers on sidewalls of memory storage elements and related methods
#2996Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same
#2997Heating phase change material
#2998Structure for confining the switching current in phase memory (PCM) cells
#2999Phase-change random access memory and process for producing same
#3000Memory device and manufacturing method thereof