PHASE-CHANGE MEMORY CELL WITH MIXED-MATERIAL SWITCHABLE REGION

Boron Surface Passivation of Phase Change Memory Material

Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Material

MEMORY DEVICE AND METHOD OF MAKING THE SAME

MEMORY CELL, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF MEMORY CELL

Multi-bit storage device using phase change material

MEMORY DEVICE AND FABRICATION METHOD THEREOF

VERTICAL ULTRA-THIN PCM CELL

VERTICAL PHASE CHANGE SWITCH DEVICES AND METHODS

RADIO FREQUENCY SWITCH FOR MULTI-BAND FILTER APPLICATIONS AND METHODS FOR FORMING THE SAME

PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE WITH AIR GAP

PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE WITH THIN SELF-ALIGNED DIELECTRIC LAYER

PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF FORMING THE SAME

Phase change material switch with improved thermal confinement and methods for forming the same

SEMICONDUCTOR MEMORY DEVICE INCLUDING CHALCOGENIDE

SiC-Doped Ge1Sb2Te4 Phase-Change Materials for 3D Crosspoint Memory

SEMICONDUCTOR STORAGE DEVICE

Phase change memory with multi-level programming

PHASE-CHANGE MEMORY CELL WITH REDUCED HEATER SIZE

PHASE CHANGE MEMORY WITH REDUCED PROGRAMMING CURRENT

Variable resistance non-volatile memory with a gate insulator film at a same height as a voltage application electrode

CONFINED PHASE-CHANGE MEMORY CELL WITH SELF-ALIGNED ELECTRODE AND REDUCED THERMAL LOSS

In-situ formation of a spacer layer for protecting sidewalls of a phase change memory element and methods for forming the same

Memory device, method for configuring memory cell in N-bit memory unit, and memory array

Method of making ovonic threshold switch selectors using microwave annealing

Ovonic threshold switch selectors with electrodes including carbon and metal

BRIDGE CELL PHASE CHANGE MEMORY

PCM cell with nanoheater surrounded with airgaps

ELECTRODE RECESSED PHASE CHANGE MEMORY PORE CELL

MULTI-LEVEL PROGRAMMING OF PHASE CHANGE MEMORY DEVICE

Programming Current Control for Artificial Intelligence (AI) Devices

Phase change memory device with improved retention characteristics and related method

SEMICONDUCTOR DEVICES

Reducing contact resistance of phase change memory bridge cell

MEMORY COMPRISING CONDUCTIVE FERROELECTRIC MATERIAL IN SERIES WITH DIELECTRIC MATERIAL

Phase change memory with encapsulated phase change element

Memory cells, memory cell arrays, methods of using and methods of making

ARTIFICIAL INTELLIGENCE (AI) DEVICES WITH IMPROVED THERMAL STABILITY AND SCALING BEHAVIOR

Phase change memory device based on nano current channel

ARTIFICIAL INTELLIGENCE DEVICE CELL WITH IMPROVED PHASE CHANGE MATERIAL REGION

PHASE CHANGE MEMORY WITH IMPROVED RECOVERY FROM ELEMENT SEGREGATION

SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAINING THIN FILMS

Storage device

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME

SEMICONDUCTOR STORAGE DEVICE

RESISTANCE CHANGE DEVICE AND STORAGE DEVICE

ELECTRICALLY INSULATED PROJECTION LINER FOR AI DEVICE

Nonvolatile phase change material logic device

Electronic device including channel layer including variable resistance and method of manufacturing the same

Three terminal phase change memory with self-aligned contacts

Phase change memory with heater

Wrap-around projection liner for AI device

Via structure and methods of forming the same

Phase change memory cell spacer

Method to integrate DC and RF phase change switches into high-speed SiGe BiCMOS

PCM cell with resistance drift correction

SPIKE-TIMING-DEPENDENT PLASTICITY USING INVERSE RESISTIVITY PHASE-CHANGE MATERIAL

SYNAPTIC DEVICE, RESERVOIR COMPUTING DEVICE INCLUDING THE SYNAPTIC DEVICE, AND RESERVOIR COMPUTING METHOD USING THE COMPUTING DEVICE

EMBEDDED DOUBLE SIDE HEATING PHASE CHANGE RANDOM ACCESS MEMORY (PCRAM) DEVICE AND METHOD OF MAKING SAME

MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME

Selector and memory device using the same

RECONFIGURABLE MEMTRANSISTORS, FABRICATING METHODS AND APPLICATIONS OF SAME

Phase change memory with conductive rings

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

TUNABLE INDUCTOR DEVICE

Phase change memory cell galvanic corrosion prevention

Phase change switch with self-aligned heater and RF terminals

Novel Nanocomposite Phase-Change Memory Materials and Design and Selection of the Same

ELECTRONIC SYNAPSE DEVICE AND METHOD OF FORMING THE SAME

Phase change memory cell with an airgap to allow for the expansion and restriction of the PCM material

Storage device

Memory device

Semiconductor storage device

RECONFIGURABLE TRANSISTOR DEVICE

METHODS OF FORMING ELECTRONIC DEVICES COMPRISING METAL OXIDE MATERIALS

MEMORY DEVICE WITH MEMORY STRINGS USING VARIABLE RESISTANCE MEMORY REGIONS

Phase-change memory device and method

PCRAM STRUCTURE

With low density change, phase-change memory and preparation method therefor

MULTIPLE MEMORY STATES DEVICE AND METHOD OF MAKING SAME

PHASE CHANGE MATERIAL, PHASE CHANGE MEMORY CELL AND PREPARATION METHOD THEREFOR

Nonvolatile tunable capacitive processing unit

Storage device having a resistance change memory element and writing method thereof

Reversible resistive memory logic gate device

Resistance change device and storage device

Memory device

Selector device and semiconductor storage device

Three-dimensional memory arrays, and methods of forming the same

Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells

STORAGE DEVICE AND STORAGE UNIT

Phase-change random access memory device and method of making the same

Memory devices and methods of forming the same

ELECTRONIC DEVICE WITH VARIABLE RESISTANCE LAYERS AND INSULATING LAYERS ALTERNATELY STACKED AND METHOD OF MANUFACTURING THE SAME

RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCESS DEVICE

Three-dimensional stacked phase change memory and preparation method thereof

Memory devices with selector layer and methods of forming the same

SELECTOR DEVICES

Memory cell, method of forming the same, and semiconductor device having the same

MEMORY DEVICE WITH INCREASED ELECTRODE RESISTANCE TO REDUCE TRANSIENT SELECTION CURRENT

Memory devices and methods of forming the same

Semiconductor memory device with a phase change layer and particular heater material

MEMORY SELECTOR

Phase change memory and method for making the same

Mitigating moisture driven degradation of silicon doped chalcogenides

Phase change memory device having tapered portion of the bottom memory layer

Transfer length phase change material (PCM) based bridge cell

Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating

PCRAM analog programming by a gradual reset cooling step

Sputtering target including carbon-doped GST and method for fabricating electronic device using the same

Memory device and method of manufacturing the same

Electrically formed memory array using single element materials

Semiconductor apparatus including a phase change material layer having a first and a second chalcogen layer

Resistance drift mitigation in non-volatile memory cell

Integrated diode memory device

Programming enhancement in self-selecting memory

Arrays of memory cells and methods of forming an array of vertically stacked tiers of memory cells

Uniform voltage drop in arrays of memory devices

Memory cell and semiconductor device having the same

Semiconductor device having three-dimensional cell structure

Fill-in confined cell PCM devices

Phase change random access memory device

Semiconductor device including layers with different chalcogen compounds and semiconductor apparatus including the same

Memory device having a ring heater

LOW-POWER PHASE-CHANGE MEMORY TECHNOLOGY WITH INTERFACIAL THERMOELECTRIC HEATING ENHANCEMENT

Memory device

Phase change memory using multiple phase change layers and multiple heat conductors

SYSTEMS, DEVICES, AND METHODS FOR DEPOSITING A LAYER COMPRISING A GERMANIUM CHALCOGENIDE

Electronic synaptic device and method for manufacturing same

Projected memory device with carbon-based projection component

Multitier arrangements of integrated devices, and methods of protecting memory cells during polishing

Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating

Display material

Semiconductor device including data storage material pattern

Nonvolatile memory device

Interconnection for memory electrodes

Memory device and method of manufacturing the same

Memory cells with asymmetrical electrode interfaces

Semiconductor memory device with selection patterns, storage patterns, and a gap fill layer and method for fabricating the same

Projected memory device with carbon-based projection component

Semiconductor storage device

Three-dimensional resistive random access memory and method making it possible to obtain such a memory

Phase-change memory device having reversed phase-change characteristics and phase-change memory having highly integrated three-dimensional architecture using same

Electronic component manufacturing method

PHASE-CHANGE MATERIAL AND ASSOCIATED RESISTIVE PHASE-CHANGE MEMORY

Semiconductor memory device

Variable resistance memory device

Transition metal dichalcogenide (TMD) layer stack for transistor applications and methods of fabrication

Insulation of phase-change memory cells

Three-dimensional memory array

Memory device and method of manufacturing memory device

Van der Waals heterostructure memory device and switching method

Semiconductor material for resistive random access memory

Memory device

Switch device and method for manufacturing a switch device

Memory devices with selector layer and methods of forming the same

Phase change memory with conductive bridge filament

METHOD OF FORMING CHALCOGENIDE-BASED THIN FILM USING ATOMIC LAYER DEPOSITION PROCESS, METHOD OF FORMING PHASE CHANGE MATERIAL LAYER AND SWITCHING DEVICE, AND METHOD OF FABRICATING MEMORY DEVICE USING THE SAME

Semiconductor memory and method of manufacturing the same

Sense lines in three-dimensional memory arrays, and methods of forming the same

Synthesis and use of precursors for ALD of tellurium and selenium thin films

Phase-change memory device and method

Low resistance multi-layer electrode for phase change memory and methods of making the same

Memory cell, method of forming the same, and semiconductor device having the same

Semiconductor device, memory cell and method of forming the same

Phase change memory structure and manufacturing method for the same

Non-volatile memory

High thermal stability SiOdoped GeSbTe materials suitable for embedded PCM application

Projected phase change memory devices

Electronic chip with two phase change memories

DIELECTRIC BARRIER AT NON-VOLATILE MEMORY TILE EDGE

Phase change material switch and method of fabricating same

Memory device with a plurality of metal chalcogenide layers

Systems and methods for phase change material based thermal assessment

Selector and non-volatile storage device

Suppressing oxidation of silicon germanium selenium arsenide material

Threshold switching selector based memory

Phase-change memory cell having a compact structure

Three-dimensional memory array

Integrated Memory Having Non-Ohmic Devices and Capacitors

VIA structure and methods of forming the same

Phase change memory using multiple stacks of PCM materials

Semiconductor memory device with resistance change memory element and manufacturing method of semiconductor memory device with resistance change memory element

Integrated reactive material erasure element with phase change memory

Three dimensional memory arrays

Memory cells, memory cell arrays, methods of using and methods of making

Selection element with a plurality of amorphous layers

Memory devices and methods of forming the same

Phase-change memory cell

Phase-change random access memory device with doped Ge—Sb—Te layers and method of making the same

Semiconductor memory device including phase change material layers and method for manufacturing thereof

PCM cell with resistance drift correction

Memory device having a ring heater

Memory including a selector switch on a variable resistance memory cell

STACKED STRUCTURE AND METHOD OF MANUFACTURING SAME, AND SEMICONDUCTOR DEVICE

Resistance variable device with chalcogen-containing layer

Nonvolatile memory device having a resistance change layer and a plurality of electrode pattern layers

Three-dimensional nonvolatile memory device having resistance change structure and method of operating the same

Electronic device and method of manufacturing the same

Variable resistance memory device

PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE

Memory device and method of manufacturing the same

Integrated memory having non-ohmic devices and capacitors

Phase-change memory with no drift

Variable resistance memory devices

Three dimensional memory arrays

Memory for embedded applications

Variable resistance memory devices implementing two-dimensional transition metal dichalcogenide materials

Multitier arrangements of integrated devices, and methods of forming sense/access lines

Synthesis and use of precursors for ALD of group VA element containing thin films

Methods of manufacturing semiconductor devices

Tapered memory cell profiles

Memory device with increased electrode resistance to reduce transient selection current

Semiconductor device and method of forming the same

Material implication operations in memory

Phase change material with reduced reset state resistance drift

Phase change memory device

Memory devices

Tapered cell profile and fabrication

PCRAM analog programming by a gradual reset cooling step

Memory device and operating method thereof

Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating

Method of fabricating a variable resistance memory device

Electronic device and operating method of electronic device

Electronic device

Cross-point memory and methods for fabrication of same

SEMICONDUCTOR STORAGE DEVICE

Variable resistance element

Phase change memory device having tapered portion of the bottom memory layer

Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating

Semiconductor memory device

Method to integrate DC and RF phase change switches into high-speed SiGe BiCMOS

Method of fabricating semiconductor devices using a two-step gap-fill process

Method for manufacturing a semiconductor device including a low-k dielectric material layer

Phase change memory with conductive bridge filament

Resistance variable memory device including stacked memory cells

Semiconductor device including a data storage material pattern

Resistive random access memory and manufacturing method thereof

Fabrication of phase change memory cell in integrated circuit

Memory device and method of manufacturing the same

Resistive memory architectures with multiple memory cells per access device

Dielectric barrier at non-volatile memory tile edge

System on chip (Soc) based on neural processor or microprocessor

System on chip (SoC) based on neural processor or microprocessor

Memory device and a method for forming the memory device

Multi-level phase change memory cells and method of making the same

Semiconductor device having buried gate structure and method for fabricating the same

Phase change memory (PCM) with gradual reset characteristics

Method for manufacturing semiconductor device

MEMORY DEVICE

Memory cell and memory device comprising selection device layer, middle electrode layer and variable resistance layer

Phase change memory using multiple phase change layers and multiple heat conductors

Memory device containing ovonic threshold switch material thermal isolation and method of making the same

Single-sided liner PCM cell for 3D crossbar PCM memory

Fabrication of stackable embedded eDRAM using a binary alloy based on antimony

Phase change memory device with crystallization template and method of making the same

Multi-level loop cut process for a three-dimensional memory device using pitch-doubled metal lines

SEMICONDUCTOR DEVICE

Memory cell

Nonvolatile memory device

Non-volatile memory element arrays in a wheatstone bridge arrangement

Method for driving an electronic device including a semiconductor memory in a test mode

Method for forming a phase change memory (PCM) cell with a low deviation contact area between a heater and a phase change element

Phase change memory and method of fabricating the same

Nonvolatile memory device

Drift mitigation with embedded refresh

Method for manufacturing a phase change memory device having a second opening above a first opening in the dielectric layer

Three-dimensional memory apparatuses and methods of use

Electronic device and method for fabricating electronic device

Three-dimensional cross-point memory device containing inter-level connection structures and method of making the same

Multitier arrangements of integrated devices, and methods of protecting memory cells during polishing

3D phase change memory

Storage device and storage unit with a chalcogen element

Methods for forming narrow vertical pillars and integrated circuit devices having the same

Multitier arrangements of integrated devices, and methods of forming sense/access lines

Electronic device

Connections for memory electrode lines

Semiconductor memory device including variable resistance layer

Memory cells, memory cell arrays, methods of using and methods of making

Memory arrays

Power handling improvements for phase-change material (PCM) radio frequency (RF) switch circuits

Transition metal doped germanium-antimony tellurium (GST) memory device components and composition

RRAM cell structure with laterally offset BEVA/TEVA

Semiconductor devices

Vertically oriented memory structure

Phase change memory

Resistance variable memory device including stacked memory cells

Chalcogenide memory device components and composition

Memory cells with asymmetrical electrode interfaces

Resistive memory device and method of manufacturing the resistive memory device

Semiconductor memory device

Memory structures having improved write endurance

Tapered cell profile and fabrication

MEMORY DEVICE AND METHOD OF FORMING THE SAME

Phase change memory and method of fabricating the same

Memory device

Three-dimensional memory array

Memory cells having resistors and formation of the same

Methods of forming a phase change memory with vertical cross-point structure

Memory device

Semiconductor memory device