Fabrication of phase change memory cell in integrated circuit

Semiconductor storage device

Symmetric phase-change memory devices

Synthesis and use of precursors for ALD of group VA element containing thin films

Capacitive and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switch

Memory device with double protective liner

Self-aligned cross-point phase change memory-switch array

Metasurface phase change communicator

Semiconductor storage device

Metal-insulator-metal (MIM) capacitor and semiconductor device

Memory device and manufacturing method thereof

Cross-point memory and methods for forming of the same

Memory devices

Interconnection for memory electrodes

Polishing composition and method of fabricating semiconductor device using the same

Memory arrays

Phase-change resistive memory

Semiconductor device including a data storage pattern and a method of manufacturing the same

Memory for embedded applications

Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells

Semiconductor devices using insulator-metal phase change materials and method for fabrication

Semiconductor device having plural dummy memory cells

Selector devices

Electrically tunable metasurfaces incorporating a phase change material

Memory device and method of manufacturing the same

Memory device

Variable resistance memory device

Variable resistance memory devices, and methods of forming variable resistance memory devices

Variable resistance memory device and method of fabricating the same

Phase change memory with gradual conductance change

HIGH ASPECT RATIO DEPOSITION

Memory structures having improved write endurance

Metal filament memory cells

Vertical memory devices

Three-dimensional memory array

IMPLEMENTING PHASE CHANGE MATERIAL-BASED SELECTORS IN A CROSSBAR ARRAY

Semiconductor device

One-time programmable memory using gate-all-around structures

Systems and methods for phase change material based thermal assessment

Memory devices and electronic devices including memory materials substantially encapsulated with dielectric materials

Three-dimensional memory array

Electronic device and method for fabricating the same

Materials and components in phase change memory devices

Phase-change memory device having reversed phase-change characteristics and phase-change memory having highly integrated three-dimensional architecture using same

High-yield tunable radio frequency (RF) filter with auxiliary capacitors and non-volatile RF switches

Symmetric tunable PCM resistor for artificial intelligence circuits

Film scheme to improve peeling in chalcogenide based PCRAM

Self-aligned embedded phase change memory cell having a fin shaped bottom electrode

Memory device

Memory controller determining endurance degradation, memory system including the same, and method of operating the memory controller

Memory device and method of manufacturing the same

Length-wise segmented slot contacts for improving performance in phase-change material (PCM) radio frequency (RF) switches

Current compliance layers and memory arrays comprising thereof

Memory device, memory cell and method for programming memory cell

Memory device architecture

Structure and method to form bi-layer composite phase-change-memory cell

Method for manufacturing semiconductor device

Width-wise segmented slot contacts for improving performance in phase-change material (PCM) radio frequency (RF) switches

Memory cell with independently-sized elements

Boolean temperature sensing using phase transition material

Segmented slot contacts for improving performance in phase-change material (PCM) radio frequency (RF) switches

Uniform plate slot contacts for improving performance in phase-change material (PCM) radio frequency (RF) switches

Low temperature film for PCRAM sidewall protection

Atomic layer deposition and physical vapor deposition bilayer for additive patterning

Integration of artificial intelligence devices

Si2Te3 resistive memory

Memory for embedded applications

Multiple memory states device and method of making same

Memory cells with asymmetrical electrode interfaces

Phase change memory

Phase-change material (PCM) RF switch with top metal contact to heating element

Phase-change material (PCM) RF switch having contacts to PCM and heating element

Variable resistance memory devices

Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating

Memory cells, memory cell arrays, methods of using and methods of making

Phase-change material (PCM) RF switch with contacts to PCM and heating element

Method for fabricating contacts in a phase-change material (PCM) RF switch having a heating element

Variable resistance memory device

Variable resistance memory device

Electronic component manufacturing method

Electronic device and method for fabricating the same

Method for manufacturing phase change memory

Storage device

Resistance change type memory

DIODE BASED RESISTIVE RANDOM ACCESS MEMORY

Resistive memory devices having address-dependent parasitic resistance compensation during programming

High reliability phase-change material (PCM) radio frequency (RF) switch using trap-rich region

Phase-change material (PCM) radio frequency (RF) switch

PCM RF switch with PCM contacts having slot lower portions

Phase change random access memory device

Methods of forming metal on inhomogeneous surfaces and structures incorporating metal on inhomogeneous surfaces

Phase change memory with improved recovery from element segregation

Memory device including a memory element between wiring layers and method of manufacturing memory device

Storage device

Switching element, variable resistance memory device, and method of manufacturing the switching element

Nonvolatile memory device

Four-or-more-component-based chalcogenide phase-change material and memory device comprising the same

Phase-change material (PCM) radio frequency (RF) switches with trench metal plugs for RF terminals

Phase-change material (PCM) radio frequency (RF) switches with capacitively coupled upper portions of RF terminals

Phase-change material (PCM) radio frequency (RF) switches with capacitive couplings between lower portions and upper portions of RF terminals

Integrated circuit devices based on metal ion migration and methods of fabricating same

Phase-change memory cell with vanadium oxide based switching layer

Memory devices

Memory device

Using a shared material for fabrication of a phase-change material (PCM) switch and a resonator

Electronic device and method for fabricating the same

Transition metal doped germanium-antimony-tellurium (GST) memory device components and composition

Variable resistance memory device including silicon capping pattern

Symmetric tunable PCM resistor for artificial intelligence circuits

Memory device and electronic apparatus including the same

Variable resistance memory device and method of fabricating the same

Resistive memory device

Non-volatile memory

Bonded two-die device including an integrated circuit (IC) die and a phase-change material (PCM) switch die

Non-volatile adjustable phase shifter using non-volatile radio frequency (RF) switch

Radio frequency (RF) filtering using phase-change material (PCM) RF switches

Phase-change material RF switch

High reliability RF switch based on phase-change material

Semiconductor chips and systems having phase-change material (PCM) switches integrated with micro-electrical-mechanical systems (MEMS) and/or resonators

Radio frequency (RF) switches having phase-change material (PCM) and heat management for increased manufacturability and performance

Heating element designs for phase-change material (PCM) radio frequency (RF) switches

Phase-change material (PCM) radio frequency (RF) switch with reduced parasitic capacitance

Concurrent fabrication of and structure for capacitive terminals and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switch

Phase-change material (PCM) contact configurations for improving performance in PCM RF switches

Phase-change material (PCM) contacts with slot lower portions and contact dielectric for reducing parasitic capacitance and improving manufacturability in PCM RF switches

Phase-change material (PCM) radio frequency (RF) switches

Method of manufacturing PCM RF switch

Fabrication of contacts in an RF switch having a phase-change material (PCM) and a heating element

Semiconductor devices having phase-change material (PCM) radio frequency (RF) switches and integrated active devices

Semiconductor devices having phase-change material (PCM) radio frequency (RF) switches and integrated passive devices

Circuits for reducing RF signal interference and for reducing DC power loss in phase-change material (PCM) RF switches

Phase-change material (PCM) radio frequency (RF) switch with reduced parasitic capacitance

Stacked phase-change material (PCM) radio frequency (RF) switches with improved RF power handling

Fabrication of semiconductor device using a shared material in a phase-change material (PCM) switch region and a resonator region

Device including PCM RF switch integrated with group III-V semiconductors

Wafer-to-wafer and die-to-wafer bonding of phase-change material (PCM) switches with integrated circuits and bonded two-die devices

Capacitive tuning circuit using RF switches with PCM capacitors and PCM contact capacitors

Phase-change material (PCM) radio frequency (RF) switches with capacitively coupled RF terminals

Semiconductor devices including a stacked cell structure

Memory device

Memory device

Storage element

Semiconductor memory device

Variable resistance memory devices

Three dimensional memory arrays

Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells

Methods and systems for compensating for degradation of resistive memory device

Resistive memory architectures with multiple memory cells per access device

Film scheme to improve peeling in chalcogenide based PCRAM

Phase change memory structure to reduce power consumption

VIA structure and methods of forming the same

Semiconductor memory device including phase change material layers and method for manufacturing thereof

Confined phase change memory with double air gap

Method for forming a phase change memory (PCM) cell with a low deviation contact area between a heater and a phase change element

Cross-point memory and methods for fabrication of same

Memory device

Tapered memory cell profiles

Methods of forming resistive memory elements

Semiconductor devices and methods of manufacturing the same

Programming enhancement in self-selecting memory

Phase change memory with gradual resistance change

Phase change memory with gradual resistance change

Methods and apparatus for three-dimensional non-volatile memory

Semiconductor device

Three dimensional memory arrays

Material implication operations in memory

Reduced current memory device

Memory device and memory unit

Phase change memory structure and manufacturing method for the same

Switch device and storage unit

Memory including a selector switch on a variable resistance memory cell

Method of fabricating a semiconductor device with an overlay key pattern

Variable resistance memory stack with treated sidewalls

Switching device with active portion configured to switch between insulating state and conducting state

Methods of forming semiconductor devices having threshold switching devices

Methods, apparatuses, and circuits for programming a memory device

Layer cost scalable 3D phase change cross-point memory

Phase change memory stack with treated sidewalls

Cross-point memory and methods for fabrication of same

Memory cells, memory cell arrays, methods of using and methods of making

Electronic device having hexagonal structure and addressing method therefor

Resistive memory device and method of manufacturing the resistive memory device

Non-contact measurement of memory cell threshold voltage

Three-dimensional semiconductor memory devices

SEMICONDUCTOR DEVICE

Phase-change memory cell having a compact structure

Semiconductor devices

Bipolar switching operation of confined phase change memory for a multi-level cell memory

Methods of forming a memory cell comprising a metal chalcogenide material

Threshold switching contact in a field-effect transistor as a selector

Memory device and method of manufacturing the same

SELECTOR-BASED ELECTRONIC DEVICES, INVERTERS, MEMORY DEVICES, AND COMPUTING DEVICES

Semiconductor memory device

Method of fabricating semiconductor devices

Cross-point memory and methods for forming of the same

Nonvolatile memory device and method of manufacturing the same

Three-dimensional phase change memory device having a laterally constricted element and method of making the same

Semiconductor memory device

Collimator, fabrication apparatus including the same, and method of fabricating a semiconductor device using the same

Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and magnetic memory

Memory devices including phase change material elements

MEMORY DEVICE, METHOD OF FORMING THE SAME, METHOD FOR CONTROLLING THE SAME AND MEMORY ARRAY

Semiconductor memory device having a phase change material

Semiconductor memory device including phase change material layers and method for manufacturing thereof

Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating

Synthesis and use of precursors for ALD of tellurium and selenium thin films

Air gap three-dimensional cross rail memory device and method of making thereof

Apparatuses and methods including memory access in cross point memory

Thermally optimized phase change memory cells and methods of fabricating the same

Memory cells with asymmetrical electrode interfaces

Tapered cell profile and fabrication

SEMICONDUCTOR DEVICE HAVING DATA STORAGE PATTERN

Memory device and method of fabricating the same

Semiconductor device having buried gate structure and method for fabricating the same

Memory cell architecture for multilevel cell programming

Memory device and method for manufacturing memory device

Conductive bridge random access memory (CBRAM) devices with low thermal conductivity electrolyte sublayer

Memory cell, memory cell array and operating method thereof

Crosspoint fill-in memory cell with etched access device

Drift mitigation with embedded refresh

Memory cells

Elementary cell comprising a resistive random-access memory and a selector, stage and matrix of stages comprising a plurality of said cells and associated manufacturing method

Variable resistance memory device and method of manufacturing the same

Memory device and method of manufacturing the same

Electronic device and method for fabricating the same

Arrays of memory cells and methods of forming an array of vertically stacked tiers of memory cells

Three-dimensional memory device containing conformal wrap around phase change material and method of manufacturing the same

Non-contact measurement of memory cell threshold voltage

Memory cells, memory cell arrays, methods of using and methods of making

Semiconductor devices and methods of manufacturing the same

Electronic device and method for fabricating the same

Resistance change device having electrode disposed between resistance switching layer and ferroelectric layer

Phase changeable memory device and semiconductor integrated circuit device including the same

Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating

Memory arrays

Synthesis and use of precursors for ALD of group VA element containing thin films

Apparatuses including memory devices and related electronic systems

Selector Device Incorporating Conductive Clusters for Memory Applications

Memory devices

Phase change random access memory device

PCRAM structure with selector device

Methods of forming a memory structure

Phase change memory devices with enhanced vias

One-time programmable devices using gate-all-around structures

Phase change memory array with integrated polycrystalline diodes

Crosspoint fill-in memory cell with etched access device

Semiconductor structure having a phase change memory device

Semiconductor memory device including a selection element pattern confined to a hole

Cross-point array device and method of manufacturing the same

Resistive memory device

Method of manufacturing a variable resistance memory device

Memory device

Methods, apparatuses, and circuits for programming a memory device

VIA structure and methods of forming the same

Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication

Memory devices having crosspoint memory arrays therein with multi-level word line and bit line structures

Semiconductor memory device

Tone inversion integration for phase change memory

Ferroelectric memory device and method of manufacturing the same

SEMICONDUCTOR MEMORY DEVICE INCLUDING A LINE-TYPE SELECTION INTERCONNECTION, AND AN ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR MEMORY DEVICE

Variable resistance memory device and method of manufacturing the same

RRAM cell structure with laterally offset BEVA/TEVA

Memory cells having resistors and formation of the same

Phase change memory structure and manufacturing method for the same

NON-VOLATILE MEMORY DEVICE

Variable resistance memory devices

Chalcogenide memory device components and composition

Superlattice-like switching devices

Methods of forming a phase change memory with vertical cross-point structure

Multi-state phase change memory device with vertical cross-point structure

Memory cell with independently-sized elements

Semiconductor devices including data storage patterns

Semiconductor devices including liners, and related systems

Storage element, storage device, method for manufacturing the same and driving method

Methods for forming narrow vertical pillars and integrated circuit devices having the same

Resistive memory device

Apparatuses and methods including memory access in cross point memory

Semiconductor structures including memory materials substantially encapsulated with dielectric materials

Memory device

MEMORY DEVICE

RF/DC decoupling system for RF switches based on phase change material

Three dimensional memory arrays

Nonvolatile memory device

Resistance change type memory

Methods of operating memory devices and apparatuses

Resistive random access memory and manufacturing method thereof

Phase change memory structure to reduce power consumption

Method for forming a phase change memory (PCM) cell with a low deviation contact area between a heater and a phase change element

Variable resistance memory devices, and methods of forming variable resistance memory devices

Cross-point memory and methods for fabrication of same

Memory cell, memory cell array, memory device and operation method of memory cell array

Multilayer selector device with low leakage current

Diode array for connecting to phase change memory and method forming same

Non-volatile memory cell structures including a chalcogenide material having a narrowed end and a three-dimensional memory device

Tip-contact controlled three dimensional (3D) vertical self select memory

Phase change memory structures and devices

Phase change device configured to modify a plurality of reconfigurable layer regions among a plurality of contacts

Buried low-resistance metal word lines for cross-point variable-resistance material memories

Buried low-resistance metal word lines for cross-point variable-resistance material memories

Resistance change memory device and fabrication method thereof