209075 ⎘
Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory; Manufacturing; Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
Nonvolatile resistive memory element with a passivated switching layer
#302Resistive random access memory (RRAM) using stacked dielectrics and method for manufacturing the same
#303Semiconductor devices having multi-width isolation layer structures
#304NON-VOLATILE MEMORY ELEMENTS AND MEMORY DEVICES INCLUDING THE SAME
#305Nonvolatile storage element and method for manufacturing same
#306Variable resistance element and method of manufacturing the same
#307Nonvolatile memory element, nonvolatile memory device, and manufacturing method for the same
#308Methods for forming resistive-switching metal oxides for nonvolatile memory elements
#309METHODS OF FORMING A PATTERN AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME
#310Phase change memory devices and methods of manufacturing the same
#311Variable resistance nonvolatile storage device and method for manufacturing the same
#312RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
#313Nonvolatile memory elements
#314Nonvolatile memory element, and nonvolatile memory device
#315Phase change memory cell having vertical channel access transistor
#316Phase change memory cells including nitrogenated carbon materials, methods of forming the same, and phase change memory devices including nitrogenated carbon materials
#317Non-volatile storage device and method for manufacturing the same
#318Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element
#319Memory device and method of manufacturing the same
#320Methods of forming a phase change material
#321Method for driving non-volatile memory element, and non-volatile memory device
#322Nonvolatile memory element, manufacturing method thereof, nonvolatile memory device, and design support method for nonvolatile memory element
#323Pore phase change material cell fabricated from recessed pillar
#324Nonvolatile memory element and nonvolatile memory device
#325NON-VOLATILE MEMORY ELEMENT AND NON-VOLATILE MEMORY DEVICE EQUIPPED WITH SAME
#326Ge-Rich GST-212 phase change memory materials
#327Method of programming variable resistance element and nonvolatile storage device
#328Surface treatment to improve resistive-switching characteristics
#329Nonvolatile memory device having an electrode interface coupling region
#330Processing phase change material to improve programming speed
#331Process of producing a resistivity-change memory cell intended to function in a high-temperature environment
#332Method of manufacturing non-volatile semiconductor memory element and method of manufacturing non-volatile semiconductor memory device
#333NONVOLATILE MEMORY DEVICE
#334Confinement techniques for non-volatile resistive-switching memories
#335Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effect
#336Ferro-resistive random access memory (Ferro-RRAM), operation method and manufacturing method thereof
#337METAL OXIDE STRUCTURES, DEVICES, AND FABRICATION METHODS
#338Nonvolatile memory element having a variable resistance layer whose resistance value changes according to an applied electric signal
#339Method of manufacturing a phase change semiconductor device and the phase change semiconductor device
#340Semiconductor storage device
#341Resistive RAM devices and methods
#342Closed loop sputtering controlled to enhance electrical characteristics in deposited layer
#343Semiconductor phase change memory using multiple phase change layers
#344Nonvolatile storage element and manufacturing method thereof
#345Variable resistance element having gradient of diffusion coefficient of ion conducting layer
#346Method for manufacturing nonvolatile semiconductor memory element
#347Nonvolatile memory element having a tantalum oxide variable resistance layer
#348Methods of forming phase change material layers and methods of manufacturing phase change memory devices
#349High density low power nanowire phase change material memory device
#350Semiconductor storage device
#351Heterojunction oxide non-volatile memory device
#352Heterojunction oxide non-volatile memory device
#353VARIABLE RESISTANCE NONVOLATILE MEMORY ELEMENT, METHOD OF MANUFACTURING THE SAME, AND VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE
#354Phase change memory cell array with self-converged bottom electrode and method for manufacturing
#355Composite target sputtering for forming doped phase change materials
#356QUATERNARY GALLIUM TELLURIUM ANTIMONY (M-GaTeSb) BASED PHASE CHANGE MEMORY DEVICES
#357Combined memories in integrated circuits
#358Phase change memory with fast write characteristics
#359RESISTANCE RANDOM ACCESS MEMORY
#360Methods for forming resistive-switching metal oxides for nonvolatile memory elements
#361Memory element and method of manufacturing the same, and memory device
#362Methods for manufacturing a phase-change memory device
#363Method of forming resistance variable memory device
#364Electrically actuated device and method of controlling the formation of dopants therein
#365Nonvolatile memory elements
#366Memristors based on mixed-metal-valence compounds
#367NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
#368Methods of forming a phase change material
#369Programmable metallization memory cells via selective channel forming
#370SEMICONDUCTOR DEVICE
#371Memory cell device and method of manufacture
#372Semiconductor device and method for manufacturing same
#373Nonvolatile memory device and manufacturing method thereof
#374Resistance-variable element and method for manufacturing the same
#375Method of forming non-volatile resistive-switching memories
#376Two Terminal Re Writeable Non Volatile Ion Transport Memory Device
#377Semiconductor phast change memory using multiple phase change layers
#378Variable resistance nonvolatile storage device having a source line formed of parallel wiring layers connected to each other through vias
#379Resistance variable memory device with nanoparticle electrode and method of fabrication
#380Nonvolatile memory element having a tantalum oxide variable resistance layer
#381Memory element and memory device
#382Nonvolatile memory element
#383Silver-selenide/chalcogenide glass stack for resistance variable memory and manufacturing method thereof
#384Nonvolatile memory element, manufacturing method thereof, design support method therefor, and nonvolatile memory device
#385Resistance-variable memory device and a production method therefor
#386VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE AND METHOD OF FORMING MEMORY CELL
#387Resistance random access memory structure for enhanced retention
#388Phase-Change Memory Units and Phase-Change Memory Devices Using the Same
#389Surface treatment to improve resistive-switching characteristics
#390Polysilicon plug bipolar transistor for phase change memory
#391LOW-POWER NANOSCALE SWITCHING DEVICE WITH AN AMORPHOUS SWITCHING MATERIAL
#392Optimized solid electrolyte for programmable metallization cell devices and structures
#393Resistive RAM devices and methods
#394Carbon-based memory element
#395Superlattice recording layer for a phase change memory
#396Forming memory using high power impulse magnetron sputtering
#397Method for manufacturing semiconductor memory element and sputtering apparatus
#398Combined memories in integrated circuits
#399Memristors with a switching layer comprising a composite of multiple phases
#400Horizontally oriented and vertically stacked memory cells
#401Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element
#402Semiconductor device and method of manufacturing the same
#403Forced ion migration for chalcogenide phase change memory device
#404Switching element and manufacturing method thereof
#405Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same
#406Resistance variable memory apparatus
#407Memory device and method of manufacturing the same
#408Variable resistance element and nonvolatile semiconductor memory device using the same
#409Nonvolatile memory element having a thin platinum containing electrode
#410NONVOLATILE MEMORY DEVICE
#411Nonvolatile memory device and method of manufacturing the same
#412Phase change memory cell having vertical channel access transistor
#413Metal nitride film, semiconductor device using the metal nitride film, and manufacturing method of semiconductor device
#414Solid-state memory manufacturing method
#415Semiconductor memory device
#416Memory cell with silicon-containing carbon switching layer and methods for forming the same
#417Confinement techniques for non-volatile resistive-switching memories
#418CHALCOGENIDE FILM AND MANUFACTURING METHOD THEREOF
#419Resistive Memory Structure with Buffer Layer
#420Pore phase change material cell fabricated from recessed pillar
#421Variable resistance nonvolatile memory device and programming method for same
#422PHASE TRANSITION DEVICES AND SMART CAPACITIVE DEVICES
#423Resistance-variable memory device including carbide-based solid electrolyte membrane and manufacturing method thereof
#424Memory component and memory device
#425Electric field induced phase transitions and dynamic tuning of the properties of oxide structures
#426Method for fabricating a resistor for a resistance random access memory
#427Processing phase change material to improve programming speed
#428Method for making self aligning pillar memory cell device
#429Current steering element, storage element, storage device, and method for manufacturing current steering element
#430Manufacturing method for pipe-shaped electrode phase change memory
#431PHASE-SEPARATION TYPE PHASE-CHANGE MEMORY
#432Memory element and memory device
#433Memory element and memory device
#434PHASE CHANGE STRUCTURE, AND PHASE CHANGE MEMORY DEVICE
#435Reactive sputtering method and reactive sputtering apparatus
#436Nonvolatile memory device and information recording method
#437Nonvolatile memory element
#438Nonvolatile semiconductor memory device and method for producing the same
#439Phase change memory with various grain sizes
#440Phase change memory cell with filled sidewall memory element and method for fabricating the same
#441Method of fabricating resistance memory
#442High density low power nanowire phase change material memory device
#443Switching device and method of manufacturing the same
#444Phase change material, a phase change random access memory device including the phase change material, and a semiconductor structure including the phase change material
#445Memory cell array, nonvolatile storage device, memory cell, and method of manufacturing memory cell array
#446Nonvolatile memory element and nonvolatile memory device
#447Bistable resistance value acquisition device, manufacturing method thereof, metal oxide thin film, and manufacturing method thereof
#448SEMICONDUCTOR MEMORY DEVICE AND OPERATION METHOD THEREOF
#449Structure and manufacturing method of semiconductor memory device
#450Variable resistance materials with superior data retention characteristics
#451Methods for forming resistive-switching metal oxides for nonvolatile memory elements
#452Method of programming variable resistance element and nonvolatile storage device
#453Integrated circuit including four layers of vertically stacked embedded re-writeable non-volatile two-terminal memory
#454INFORMATION RECORDING MEDIUM, MANUFACTURING METHOD THEREFOR, AND SPUTTERING TARGET
#455Method for making a self aligning memory device
#456Resistance variable nonvolatile memory device
#457Variable resistance element and manufacturing method of the same
#458Non-volatile memory device including a stacked structure and voltage application portion
#459RESISTANCE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME
#460Memory device and storage apparatus
#461Nonvolatile metal oxide memory element and nonvolatile memory device
#462Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same
#463Information recording and reproducing device
#464Nonvolatile memory and fabrication method thereof
#465Non-volatile memory device and method for manufacturing the same
#466Nonvolatile memory element and nonvolatile memory device
#467PHASE CHANGE STRUCTURE WITH COMPOSITE DOPING FOR PHASE CHANGE MEMORY
#468Methods to fabricate non-metal films on semiconductor substrates using physical vapor deposition
#469Variable resistance nonvolatile storage device and method of forming memory cell
#470INFORMATION RECORDING DEVICE AND INFORMATION RECORDING/REPRODUCTION SYSTEM INCLUDING THE SAME
#471Nonvolatile memory device and method of manufacturing the same
#472Method for making a phase change memory device with vacuum cell thermal isolation
#473Nonvolatile memory device and method for manufacturing the same
#474Resistance variable element
#475Phase change memory devices
#476PHASE CHANGE MEMORY DEVICE
#477TARGET, METHOD FOR PRODUCING THE SAME, MEMORY, AND METHOD FOR PRODUCING THE SAME
#478Method of fabricating Ag-doped Te-based nano-material and memory device using the same
#479Nonvolatile memory device with recording layer having two portions of different nitrogen amounts
#480Resistor random access memory cell with reduced active area and reduced contact areas
#481Arsenic-containing variable resistance materials
#482Thermal protect PCRAM structure and methods for making
#483Push-pull programmable logic device cell
#484Method of programming variable resistance element and variable resistance memory device using the same
#485Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element
#486Back to back resistive random access memory cells
#487Resistive RAM devices for programmable logic devices
#488Resistance change element and manufacturing method thereof
#489Nonvolatile memory element
#490Front to back resistive random access memory cells
#491Phase-change memory element, phase-change memory cell, vacuum processing apparatus, and phase-change memory element manufacturing method
#492Phase change memory having one or more non-constant doping profiles
#493Nonvolatile semiconductor memory device including a variable resistance layer including carbon
#494Chalcogenide Devices Exhibiting Stable Operation from the As-Fabricated State
#495Nonvolatile storage device and method for writing into the same
#496Solid-state memory device, data processing system, and data processing device
#497Phase change memory having stabilized microstructure and manufacturing method
#498CHALCOGENIDE FILM AND METHOD OF MANUFACTURING SAME
#499Nonvolatile memory element and nonvolatile memory device incorporating nonvolatile memory element
#500Buried silicide structure and method for making
#501Memory structure with reduced-size memory element between memory material portions
#502Phase change memory cell having vertical channel access transistor
#503Nonvolatile memory element, and nonvolatile memory device
#504Phase change memory cells having vertical channel access transistor and memory plane
#505One-transistor, one-resistor, one-capacitor phase change memory
#506SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
#507Superlattice device, manufacturing method thereof, solid-state memory including superlattice device, data processing system, and data processing device
#508Metallic-glass-based phase-change memory
#509Resistive memory structure with buffer layer
#510Phase change layer and method of manufacturing the same and phase change memory device comprising phase change layer and methods of manufacturing and operating phase change memory device
#511Integrated circuit 3D phase change memory array and manufacturing method
#512Ring-shaped electrode and manufacturing method for same
#513Nonvolatile memory element, nonvolatile memory device, and nonvolatile semiconductor device
#514RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
#515Resistance change element and method of manufacturing the same
#516Controlled localized defect paths for resistive memories
#517Methods of fabricating semiconductor devices
#518Semiconductor memory device, method of manufacturing the same, and method of screening the same
#519NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
#520Resistive random access memory, nonvolatile memory, and method of manufacturing resistive random access memory
#5214Fself align side wall active phase change memory
#522Resistance variable element, nonvolatile switching element, and resistance variable memory apparatus
#523Variable resistance device, method for manufacturing variable resistance device, and semiconductor storage device using variable resistance device
#524THIN FILM FORMING APPARATUS
#525Active material devices with containment layer
#526Layered resistance variable memory device and method of fabrication
#527Resistor random access memory cell with L-shaped electrode
#528Nonvolatile memory element, and nonvolatile semiconductor device using the nonvolatile memory element
#529SOLID MEMORY
#530DEPOSITION OF CHALCOGENIDE MATERIALS VIA VAPORIZATION PROCESS
#531RESISTANCE VARIABLE ELEMENT
#532Semiconductor phase change memory using multiple phase change layers
#533SOLID MEMORY
#534Resistor random access memory cell device
#535Programmable metallization memory cells via selective channel forming
#536Methods for manufacturing a phase-change memory device
#537Phase change memory with dual word lines and source lines and method of operating same
#5382-TERMINAL SEMICONDUCTOR DEVICE USING ABRUPT METAL-INSULATOR TRANSITION SEMICONDUCTOR MATERIAL
#539Bistable resistance value acquisition device, manufacturing method thereof, metal oxide thin film, and manufacturing method thereof
#540NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND METHOD OF WRITING DATA TO NONVOLATILE MEMORY ELEMENT
#541Semiconductor storage device
#542Polysilicon pillar bipolar transistor with self-aligned memory element
#543Phase-Changeable Random Access Memory Devices Including Barrier Layers and Metal Silicide Layers
#544Solid-state memory and semiconductor device
#545Nonvolatile semiconductor memory having buffer layer containing nitrogen and containing carbon as main component
#546Non-volatile memory cell and fabrication method thereof
#547Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effect
#548Rewritable memory device based on segregation/re-absorption
#549VARIABLE RESISTANCE ELEMENT AND SEMICONDUCTOR DEVICE PROVIDED WITH THE SAME
#550Polysilicon plug bipolar transistor for phase change memory
#551Resistance variable memory apparatus
#552Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
#553SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME
#554Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method
#555Method for fabricating resistive memory device
#556Method for manufacturing resistance RAM device
#557Ovonic threshold switch film composition for TSLAGS material
#558ELECTRIC DEVICE WITH NANOWIRES COMPRISING A PHASE CHANGE MATERIAL
#559Multi-level memory cell having phase change element and asymmetrical thermal boundary
#560Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory element
#561Method of manufacturing a phase changeable memory unit having an enhanced structure to reduce a reset current
#562Phase change memory cell and manufacturing method
#563Information recording and reproducing apparatus
#564Information recording and reproducing apparatus
#565Information recording/reproducing device
#566Silver-selenide/chalcogenide glass stack for resistance variable memory
#567Memory device and storage apparatus
#568Switching element and method for manufacturing switching element
#569Memory cell having a side electrode contact
#570Resistance variable memory with temperature tolerant materials
#571Information recording/reproducing device
#572Memory cells including nanoporous layers containing conductive material
#573Programmable metallization cell switch and memory units containing the same
#574Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same
#575CARBON-BASED MEMORY ELEMENTS EXHIBITING REDUCED DELAMINATION AND METHODS OF FORMING THE SAME
#576Nonvolatile memory element array with storing layer formed by resistance variable layers
#577Dielectric mesh isolated phase change structure for phase change memory
#578Semiconductor device
#579Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods
#580Thin film fuse phase change cell with thermal isolation pad and manufacturing method
#581Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing
#582MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
#583Resistance change element and semiconductor device including the same
#584Phase change memory materials
#585Phase change material and methods of forming the phase change material
#586Methods of forming a phase change material
#587Memory cell that includes a carbon-based memory element and methods of forming the same
#588Method of Manufacturing a Resistivity Changing Memory Cell, Resistivity Changing Memory Cell, Integrated Circuit, and Memory Module
#589MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME
#590MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME
#591Memory cell that includes a carbon-based memory element and methods forming the same
#592METHOD FOR FORMING CHALCOGENIDE FILM AND METHOD FOR MANUFACTURING RECORDING ELEMENT
#593Resistance variable element, resistance variable memory apparatus, and resistance variable apparatus
#594METHOD OF FABRICATING RRAM
#595Multi-layer phase-changeable memory devices
#596MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE
#597Semiconductor device
#598Phase-change memory device and method of fabricating the same
#599Switching device
#600INFORMATION RECORDING/REPRODUCING DEVICE