Resistance variable element and resistance variable memory apparatus

Cross point memory cell with distributed diodes and method of making same

PHASE CHANGE MEMORY AND RECORDING MATERIAL FOR PHASE CHANGE MEMORY

Programmable metallization memory cells via selective channel forming

Electric element, memory device, and semiconductor integrated circuit

Memory element, memory apparatus, and semiconductor integrated circuit

Semiconductor device and manufacturing method of the same

Non-volatile resistance switching memory

Non-volatile resistance switching memory

Multi-terminal reversibly switchable memory device

Two-Terminal Reversibly Switchable Memory Device

Semiconductor device

Resistance change memory, and data write and erase methods thereof

Information recording medium, target and method for manufacturing of information recording medium using the same

Optimized solid electrolyte for programmable metallization cell devices and structures

Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element

Resistive changing device

Confinement techniques for non-volatile resistive-switching memories

Closed-loop sputtering controlled to enhance electrical characteristics in deposited layer

Reduction of forming voltage in semiconductor devices

Surface treatment to improve resistive-switching characteristics

Non-volatile resistive-switching memories

Memory cell having a buried phase change region and method for fabricating the same

Resistance change element and method of manufacturing the same

Sidewall structured switchable resistor cell

Variable resistance nonvolatile memory apparatus

Information recording medium and method for producing the same

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Phase Change Materials for Applications that Require Fast Switching and High Endurance

Phase Change Memory Device

Temperature and pressure control methods to fill features with programmable resistance and switching devices

Pressure extrusion method for filling features in the fabrication of electronic devices

Nonvolatile memory element, nonvolatile memory apparatus, nonvolatile semiconductor apparatus, and method of manufacturing nonvolatile memory element

Resistance variable element

Four vertically stacked memory layers in a non-volatile re-writeable memory device

Variable resistive element, and its manufacturing method

Non-Volatile Memory Element with Improved Temperature Stability

Resistive memory element and method of fabrication

Phase change material, phase change memory device including the same, and methods of manufacturing and operating the phase change memory device

Phase change memory device

Pore phase change material cell fabricated from recessed pillar

Phase-change material, memory unit and method for electrically storing/reading data

Memory cell with memory element contacting an inverted T-shaped bottom electrode

Phase change memory device and method of fabricating the same

Phase change material layers and phase change memory devices including the same

Nonvolatile memory element and manufacturing method thereof

Memory element and memory device

Phase change material layer and phase change memory device including the same

Phase change magnetic material

Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods

Resistive Memory Element

Memory cell device with circumferentially-extending memory element

Active material devices with containment layer

Resistance variable memory device with nanoparticle electrode and method of fabrication

Phase change memory cell including a thermal protect bottom electrode and manufacturing methods

Memory device

Integrated Circuit, Method of Manufacturing an Integrated Circuit, and Memory Module

SEMICONDUCTOR MEMORY DEVICE WITH VARIABLE RESISTANCE ELEMENT

Method for making self aligning pillar memory cell device

Co-sputter deposition of metal-doped chalcogenides

Method for making a self-converged memory material element for memory cell

Variable resistance element, its manufacturing method and semiconductor memory device comprising the same

Phase change materials and associated memory devices

Programmable resistive memory with diode structure

Semiconductor phase change memory using multiple phase change layers

STRUCTURE AND METHOD FOR MANUFACTURING PHASE CHANGE MEMORIES

Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication

Phase change memory with various grain sizes

Phase change memory cell array with self-converged bottom electrode and method for manufacturing

Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing

Phase-change memory cell and method of fabricating the phase-change memory cell

Electric element, memory device, and semiconductor integrated circuit

Nonvolatile memory element

Phase-change memory units, methods of forming the phase-change memory units, phase-change memory devices having the phase-change memory units and methods of manufacturung the phase-change memory devices

Phase change memory cell with first and second transition temperature portions

Phase-change random access memory and method of manufacturing the same

Perovskite transition metal oxide nonvolatile memory element

Integrated circuit including memory element with high speed low current phase change material

Vertical side wall active pin structures in a phase change memory and manufacturing methods

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Integrated circuit having a cell with a resistivity changing layer

Phase change memory device and method of fabricating the same

Phase change memory with dual word lines and source lines and method of operating same

Switching device, rewritable logic integrated circuit, and memory device

Phase change memory bridge cell

Increased switching cycle resistive memory element

Nonvolatile memory element including resistive switching metal oxide layers

Phase change material containing carbon, memory device including the phase change material, and method of operating the memory device

RESISTANCE-SWITCHING OXIDE THIN FILM DEVICES

Solid electrolyte switching element, and fabrication method of the solid electrolyte element, and integrated circuit

Resistive memory structure with buffer layer

4F2 self align fin bottom electrodes FET drive phase change memory

Phase-change material, sputter target comprising the phase-change material, method of forming phase-change layer using the sputter target, and method of manufacturing phase-change random access memory comprising the phase-change layer

Methods of fabricating multi-layer phase-changeable memory devices

Vertical phase change memory cell and methods for manufacturing thereof

Methods of forming a resistance variable element

Resistance memory element and method of manufacturing the same

Phase-change nonvolatile memory device using Sb-Zn alloy

RESISTIVE SWITCHING ELEMENT

Method of programming multi-layer chalcogenide devices

Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same

Phase changeable memory device structures

Material sidewall deposition method

Air cell thermal isolation for a memory array formed of a programmable resistive material

4Fself align side wall active phase change memory

Memory cell sidewall contacting side electrode

Phase change memory bridge cell with diode isolation device

Memory structure with reduced-size memory element between memory material portions

INFORMATION RECORDING/REPRODUCING DEVICE

Optimized solid electrolyte for programmable metallization cell devices and structures

Phase-change memory device using Sb-Se metal alloy and method of fabricating the same

Resistance memory element and method of manufacturing the same, and semiconductor memory device

Methods of forming a phase-change material layer including tellurium and methods of manufacturing a phase-change memory device using the same

Resistance variable memory with temperature tolerant materials

Methods of manufacturing a semiconductor device; method of manufacturing a memory cell; semiconductor device; semiconductor processing device; integrated circuit having a memory cell

Phase change storage cells for memory devices

Memory cell with memory element contacting ring-shaped upper end of bottom electrode

Memory element with reduced-current phase change element

Method for manufacturing a phase change memory device with pillar bottom electrode

Phase change memory cell with filled sidewall memory element and method for fabricating the same

MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

Memory cell having a side electrode contact

Phase change layer including indium and method of manufacturing the same and phase change memory device comprising phase change layer including indium and methods of manufacturing and operating the same

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF WRITING INTO THE SAME

Storage node of a resistive random access memory device with a resistance change layer and method of manufacturing the same

Nonvolatile memory and fabrication method thereof

Phase changeable memory devices including nitrogen and/or silicon

Resistance Limited Phase Change Memory Material

Resistance random access memory and method of manufacturing the same

Resistor random access memory cell device

Resistance variable memory with temperature tolerant materials

Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement

Method for making a keyhole opening during the manufacture of a memory cell

Method for making a self-converged memory material element for memory cell

Differential negative resistance memory

Forced ion migration for chalcogenide phase change memory device

MIM device and electronic apparatus

Resistance memory element and nonvolatile semiconductor memory

Resistance random access memory structure for enhanced retention

Resistive random access memory having a solid solution layer and method of manufacturing the same

Combined memories in integrated circuits

METHOD OF MAKING A VARIABLE RESISTANCE MEMORY

Correlated electron memory

Phase change memory cells with dual access devices

Method of forming phase change memory devices in a pulsed DC deposition chamber

Carbon filament memory and method for fabrication

Memory cell device with circumferentially-extending memory element

Carbon filament memory and fabrication method

Method for making memory cell device

Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas

Memory device

Layer structures comprising chalcogenide materials

Method of forming a chalcogenide compound target

Method of Forming a Phase-Change Memory Unit and Method of Manufacturing a Phase-Change Memory Device Using the Same

Memory cell and method of manufacturing thereof

Phase-change material layer and phase-change memory device including the phase-change material layer

Switching elements and production methods thereof

Chalcogenide devices exhibiting stable operation from the as-fabricated state

VARIABLE RESISTANCE ELEMENT AND RESISTANCE VARIABLE TYPE MEMORY DEVICE

ELECTRO-RESISTANCE ELEMENT, METHOD OF MANUFACTURING THE SAME AND ELECTRO-RESISTANCE MEMORY USING THE SAME

Phase change materials and associated memory devices

Multi-layered chalcogenide and related devices having enhanced operational characteristics

Memory cell device and method of manufacture

MULTI-LAYER DEVICE WITH SWITCHABLE RESISTANCE

Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same

Optimized solid electrolyte for programmable metallization cell devices and structures

Memory cell with memory material insulation and manufacturing method

Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement

Sputter deposition method for forming integrated circuit

Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication

Reflowing of a phase changeable memory element to close voids therein

Switching element, reconfigurable logic integrated circuit and memory element

Resistor random access memory cell with reduced active area and reduced contact areas

Resistor random access memory cell with L-shaped electrode

Multi-level memory cell having phase change element and asymmetrical thermal boundary

Non-volatile electrical phase change memory device comprising interfacial control layer and method for the preparation thereof

Non-volatile resistance-switching oxide thin film devices

Phase change memory cell employing a GeBiTe layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the same

Programmable resistive memory cell with a programmable resistance layer

RESISTIVE MEMORY DEVICE

Electric device with nanowires comprising a phase change material

Electro-resistance element and electro-resistance memory using the same

Phase change memory cell with limited switchable volume

Phase change memory cell with vacuum spacer

Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse

Methods of programming non-volatile memory devices including transition metal oxide layer as data storage material layer and devices so operated

Forming ovonic threshold switches with reduced deposition chamber gas pressure

Phase-changeable memory devices including nitrogen and/or silicon dopants

Multi-layer phase-changeable memory devices

Manufacturing method for pipe-shaped electrode phase change memory

Electrical structure with a solid state electrolyte layer, memory with a memory cell and method for fabricating the electrical structure

Ferroelectric tunneling element and memory applications which utilize the tunneling element

Method of fabricating an integrated electronic circuit with programmable resistance cells

Nonvolatile memory device, layer deposition apparatus and method of fabricating a nonvolatile memory device using the same

Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds

Vertical side wall active pin structures in a phase change memory and manufacturing methods

Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories

Co-sputter deposition of metal-doped chalcogenides

Electrically rewritable non-volatile memory element and method of manufacturing the same

Conductive memory stack with sidewall

Manufacturing method for phase change RAM with electrode layer process

Information recording medium and method for manufacturing the same

Phase change memory cell and manufacturing method

Method of manufacturing non-volatile memory element

Storage element and storage apparatus

Damascene phase change RAM and manufacturing method

Thin film fuse phase change cell with thermal isolation pad and manufacturing method

Vacuum cell thermal isolation for a phase change memory device

Phase change memory cell and manufacturing method

Resistance-switching memory based on semiconductor composition of perovskite conductor doped perovskite insulator

Memory cell device and manufacturing method

Memory cell comprising nickel-cobalt oxide switching element

Devices having reversible resistivity-switching metal oxide or nitride layer with added metal

Pipe shaped phase change memory

Bistable resistance value acquisition device, manufacturing method thereof, metal oxide thin film, and manufacturing method thereof

Silver-selenide/chalcogenide glass stack for resistance variable memory

Chalcogenide PVD components and methods of formation

Chalcogenide-based electrokinetic memory element and method of forming the same

Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target

Phase change film for semiconductor nonvolatile memory and sputtering target for forming phase change film

Method of fabricating a storage node

Resistance variable memory device with nanoparticle electrode and method of fabrication

Chalcogenide devices and materials having reduced germanium or telluruim content

Chalcogenide devices incorporating chalcogenide materials having reduced germanium or telluruim content

Multi-layer chalcogenide devices

Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication

Methods of forming phase change storage cells for memory devices

Structure and method for manufacturing phase change memories with particular switching characteristics

Layered resistance variable memory device and method of fabrication

Information recording medium

Phase change material for high density non-volatile memory

Reducing the time to program a phase change memory to the set state

Method for manufacturing a narrow structure on an integrated circuit

Manufacturing methods for thin film fuse phase change ram

Self-aligned, embedded phase change RAM

Methods for fabricating phase changeable memory devices

Method for fabricating a variable-resistance element including heating a RMCoOperovskite structure in an oxygen atmosphere

Switching element, programmable logic integrated circuit and memory element

Resistance variable memory element and its method of formation

Process for physical vapor deposition of a chalcogenide material layer and chamber for physical vapor deposition of a chalcogenide material layer of a phase change memory device

Thin film diode integrated with chalcogenide memory cell

Methods of forming a resistance variable element

Resistance variable memory with temperature tolerant materials

Method for manufacturing an integrated circuit including an electrolyte material layer

Method for fabricating a resistive memory

Memory device comprising a memory layer and a metal chalcogenide ion-source layer

Resistive memory element with shortened erase time

Nonvolatile nanochannel memory device using mesoporous material

Semiconductor memory device, memory cell array, and method for fabricating the same

Memory using mixed valence conductive oxides

Conductive memory stack with non-uniform width

Phase changable memory device structures

Information recording medium and manufacturing method thereof

Nonvolatile memory and fabrication method thereof

Memory element and memory device

Methods of depositing silver onto a metal selenide-comprising surface and methods of depositing silver onto a selenium-comprising surface

Electro-resistance element and method of manufacturing the same

Microelectronic programmable device and methods of forming and programming the same

Semiconductor integrated circuit device and method of manufacturing the same

Methods of programming non-volatile memory devices including transition metal oxide layer as data storage material layer and devices so operated

Semiconductor and semiconductor manufacturing arrangements having a chalcogenide layer formed of columnar crystal grains perpendicular to a main substrate surface

Structure and manufacturing method of semiconductor memory device

Switching element, line-switching device and logic circuit

Variable resistance device and a semiconductor apparatus, including a variable resistance layer made of a material with a perovskite structure

Switching or amplifier device, in particular transistor

Electro-resistance element and electro-resistance memory using the same

Resistively switching nonvolatile memory cell based on alkali metal ion drift

Wet chemical method to form silver-rich silver-selenide

Reactive sputtering process for optimizing the thermal stability of thin chalcogenide layers

Resistance variable memory with temperature tolerant materials

Methods for sputtering a target material by intermittently applying a voltage thereto and related apparatus, and methods of fabricating a phase-changeable memory device employing the same

Laser reflowing of phase changeable memory element to close a void therein

2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material

Resistance variable memory elements based on polarized silver-selenide network growth

Programmable structure, an array including the structure, and methods of forming the same

Semiconductor device and manufacturing method for same

Programmable structure, an array including the structure, and methods of forming the same

Phase-change recording material used for information recording medium and information recording medium employing it

Method and resulting structure for PCMO film to obtain etching rate and mask to selectively by inductively coupled plasma

Non-volatile resistance switching memory

Phase-change memory cell and method of fabricating the phase-change memory cell

Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer

Memory device and storage apparatus

Memory array of a non-volatile RAM

Memory cell with an asymmetric crystalline structure

Information recording medium and method for manufacturing the same

Phase-change recording material and information recording medium

Non-volatile memory with a single transistor and resistive memory element

Phase-change recording material and information recording medium

Memory device having variable resistive memory element

Non-volatile zero field splitting resonance memory

Phase-change memory cell and method of fabricating the phase-change memory cell

Resistance variable memory elements based on polarized silver-selenide network growth

Method for manufacturing nonvolatile semiconductor memory device

Nonvolatile semiconductor memory device

Memory element and its method of formation

Nonvolatile semiconductor memory device comprising a variable resistive element containing a perovskite-type crystal structure

Information recording medium and method for manufacturing the same

Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target

Differential negative resistance memory