209075 ⎘
Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory; Manufacturing; Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
Conductive memory stack with non-uniform width
#902Thin film diode integrated with chalcogenide memory cell
#903Information recording medium and method for manufacturing the same
#904Chalcogenide phase-change non-volatile memory, memory device and method for fabricating the same
#905Information recording medium and method for manufacturing the same
#906Non-volatile memory
#907EPIR device and semiconductor devices utilizing the same
#908Phase change recording film having high electric resistance and sputtering target for forming phase change recording film
#909Processing phase change material to improve programming speed
#910Resistance variable device
#911Information recording medium and method for producing the same
#912Information recording medium and method for producing the same
#913Resistance variable memory elements and methods of formation
#914Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same
#915Resistive random access memory and method for forming the same
#916PCM RF switch fabrication with subtractively formed heater
#917Te-free AsSeGe chalcogenides for selector devices and memory devices using same
#918Dielectric doped, Sb-rich GST phase change memory
#919RRAM device and method for manufacturing the same
#920Fabrication method of resistance variable memory apparatus
#921Doped narrow band gap nitrides for embedded resistors of resistive random access memory cells
#922Methods of forming embedded resistors for resistive random access memory cells
#923Memory structure and preparation method thereof
#924Carbon-chalcogenide variable resistance memory device
#925Embedded resistors for resistive random access memory cells