242006 ⎘
Semiconductor device manufacturing: process; Doping Deep level dopants, e.g. gold, chromium, iron or nickel
METHOD AND SYSTEM FOR MUTLILINE MIR-IR LASER
#2Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material
#3Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
#4Mid-IR microchip laser: ZnS:Crlaser with saturable absorber material
#5Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
#6Thermally programmable anti-reverse engineering interconnects wherein interconnects only conduct when heated above room temperature
#7Mid-IR Microchip Laser: ZnS:Cr2+ Laser with Saturable Absorber Material
#8Method of making thermally programmable anti-reverse engineering interconnects wherein interconnects only conduct when heated above room temperature
#9Gate control and endcap improvement
#10Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
#11Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications
#12Controlling gate formation by removing dummy gate structures
#13Mid-IR microchip laser: ZnS:Cr laser with saturable absorber material
#14Semiconductor manufacturing apparatus for modifying-in-film stress of thin films, and product formed thereby
#15Method of production of nano particle dispersed composite material
#16Semiconductor device and method of manufacturing the same