ClassID:

242007

Y10S438/918 - CPC Classification

Classification description:

Semiconductor device manufacturing: process; Doping Special or nonstandard dopant

Recent Application in this class:
#1
20150187584
2015-07-02

Tunneling field effect transistor (TFET) formed by asymmetric ion implantation and method of making same

#2
20150054134
2015-02-26

Silicon wafer and manufacturing method thereof

#3
20140170827
2014-06-19

Tunneling field effect transistor (TFET) formed by asymmetric ion implantation and method of making same

#4
20120043644
2012-02-23

Silicon wafer and manufacturing method thereof

#5
20110215422
2011-09-08

Penetrating implant for forming a semiconductor device

#6
20090314958
2009-12-24

Methods for implanting B22Hx and its ionized lower mass byproducts

#7
20090242998
2009-10-01

Penetrating implant for forming a semiconductor device

#8
20090236598
2009-09-24

ZnO layer and semiconductor light emitting device

#9
20070207612
2007-09-06

Selective heating using flash anneal

#10
20060141690
2006-06-29

Method for manufacturing a semiconductor device

#11
20060005768
2006-01-12

Doping method, doping apparatus, and control system for doping apparatus

#12
20050245056
2005-11-03

Ion implantation with multiple concentration levels

#13
20050227463
2005-10-13

Doping method and manufacturing method for a semiconductor device

#14
20050176229
2005-08-11

Deposition method for Si-Ge epi layer on different intermediate substrates

#15
20050148178
2005-07-07

Method for fabricating a p-channel field-effect transistor on a semiconductor substrate

#16
20050142875
2005-06-30

Selective heating using flash anneal

#17
20050074951
2005-04-07

Selective heating using flash anneal

#18
20050042386
2005-02-24

Method of production of nano particle dispersed composite material