242020 ⎘
Semiconductor device manufacturing: process Silicon carbide semiconductor
Semiconductor transistor device with dopant profile
#2Device with a single crystal diamond substrate with a buried electrically conducting layer
#3Silicon carbide devices having smooth channels
#4Semiconductor device and method for manufacturing same
#5Method for manufacturing silicon carbide semiconductor device
#6Patterned graphene structures on silicon carbide
#7Transistor device and fabrication method
#8Silicon carbide semiconductor device and method for manufacturing same
#9Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
#10Laser ablation technique for electrical contact to buried electrically conducting layers in diamond
#11Production process of epitaxial silicon carbide single crystal substrate
#12Method for manufacturing silicon carbide semiconductor device
#13Method of manufacturing Schottky barrier diode
#14Method for forming a semiconductor transistor device with optimized dopant profile
#15Semiconductor device and method for manufacturing same
#16Method for manufacturing silicon carbide substrate and method for manufacturing semiconductor device
#17Silicon carbide semiconductor device and method for manufacturing same
#18Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus
#19Method for manufacturing semiconductor device
#20Methods of fabricating silicon carbide devices having smooth channels
#21DOPED DIAMOND LED DEVICES AND ASSOCIATED METHODS
#22Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
#23METHOD OF FABRICATION OF METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR
#24Lightly doped silicon carbide wafer and use thereof in high power devices
#25Substrate processing method and method of manufacturing crystalline silicon carbide (SIC) substrate
#26Methods of making random access memory devices, transistors, and memory cells
#27Memory devices and memory cells
#28Structure and method of making interconnect element, and multilayer wiring board including the interconnect element
#29Method of manufacturing silicon carbide semiconductor device
#30Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same
#31Silicon carbide switching devices including P-type channels
#32Process for forming an interface between silicon carbide and silicon oxide with low density of states
#33Semiconductor device and method for manufacturing the same
#34Semiconductor device and manufacturing method therefor
#35MOSFET with asymmetrical extension implant
#36Semiconductor memory device
#37Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys
#38Stressed semiconductor using carbon and method for producing the same
#39Doped diamond LED devices and associated methods
#40Method for manufacturing semiconductor substrate
#41Semiconductor device including a p-type transistor having extension regions in sours and drain regions and method of fabricating the same
#42Method for manufacturing ion implantation mask, and method for manufacturing silicon carbide semiconductor device
#43Air gap integration scheme
#44Doped Gallium Nitride Annealing
#45Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same
#46Method of forming an OHMIC contact on a P-type 4H-SIC substrate
#47Method of fabricating silicon carbide (SiC) layer
#48Silicon carbide semiconductor device and method for producing the same
#49Microwave heating for semiconductor nanostructure fabrication
#50Silicon carbide semiconductor device and method for manufacturing the same
#51Method of manufacturing silicon carbide semiconductor device
#52Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
#53Method for improving inversion layer mobility in a silicon carbide MOSFET
#54Semiconductor-on-diamond devices and associated methods
#55Silicon carbide semiconductor device and method for producing the same
#56Diluted magnetic semiconductor nanowires exhibiting magnetoresistance
#57MOSFET with asymmetrical extension implant
#58Method of mediating forward voltage drift in a SiC device
#59Silicon carbide semiconductor device
#60Silicon carbide devices having smooth channels
#61Semiconductor devices and manufacturing method thereof
#62Methods of processing semiconductor wafers having silicon carbide power devices thereon
#63Homoepitaxial growth of SiC on low off-axis SiC wafers
#64Method of producing semiconductor device
#65Method for forming a multiple layer passivation film and a device incorporating the same
#66In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
#67Method for manufacturing silicon carbide semiconductor apparatus
#68Lightly doped silicon carbide wafer and use thereof in high power devices
#69Method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor device
#70Method of fabrication of metal oxide semiconductor field effect transistor
#71Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
#72Method for manufacturing junction semiconductor device
#73Semiconductor device and manufacturing method therefor
#74Doped diamond LED devices and associated methods
#75Method of manufacturing III-V nitride semiconductor device
#76Methods of forming ohmic layers through ablation capping layers
#77Manufacturing method of a silicon carbide semiconductor device
#78Method of manufacturing silicon carbide semiconductor device
#79Method for manufacturing semiconductor device
#80Method and device with durable contact on silicon carbide
#81SiC semiconductor device and method for manufacturing the same
#82Process for forming an interface between silicon carbide and silicon oxide with low density of states
#83Air gap integration scheme
#84Semiconductor device and method for manufacturing the same
#85Post-deposition treatment to enhance properties of Si-O-C low K films
#86Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects
#87Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices
#88Method for manufacturing SiC semiconductor device
#89Structure and method for reducing forward voltage across a silicon carbide-group III nitride interface
#90Silicon carbide semiconductor device and method for manufacturing the same
#91Semiconductor manufacturing method and semiconductor laser device manufacturing method
#92Semiconductor structure for use in a static induction transistor having improved gate-to-drain breakdown voltage
#93Methods of forming silicon carbide switching devices including P-type channels
#94Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
#95Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes
#96Fingerprint detection device and method of its manufacture, and apparatus for forming a protective film
#97Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same
#98Metal oxide semiconductor field effect transistor with strained source/drain extension layer
#99Doping of SiC structures and methods associated with same
#100Method to reduce stacking fault nucleation sites and reduce V drift in bipolar devices
#101Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same
#102Etching of substrates of light emitting devices
#103Epitaxial semiconductor structures having reduced stacking fault nucleation sites
#104Featuring forming methods to reduce stacking fault nucleation sites
#105Epitaxial substrate for field effect transistor
#106Methods of processing semiconductor wafers having silicon carbide power devices thereon
#107Semiconductor device and manufacturing method thereof
#108Method of manufacturing SiC single crystal wafer
#109Ion implantation mask and method for manufacturing same, silicon carbide semiconductor device using ion implantation mask, and method for manufacturing same
#110Silicon carbide epitaxial wafer, method for producing such wafer, and semiconductor device formed on such wafer
#111Silicon carbide devices with hybrid well regions
#112Methods of fabricating silicon carbide devices having smooth channels
#113Strengthening the interface between dielectric layers and barrier layers with an oxide layer of varying composition profile
#114Sequential lithographic methods to reduce stacking fault nucleation sites
#115Silicon carbide power devices with self-aligned source and well regions
#116Methods of fabricating silicon nitride regions in silicon carbide and resulting structures
#117Junction semiconductor device and method for manufacturing the same
#118Method for forming a multiple layer passivation film and a device incorporating the same
#119Composite barrier/etch stop layer comprising oxygen doped SiC and SiC for interconnect structures
#120Memory devices, transistors, and memory cells
#121Stressed semiconductor using carbon and method for producing the same
#122Silicon carbide-based device contact and contact fabrication method
#123Graded junction termination extensions for electronic devices
#124Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications
#125Method of depositing dielectric films
#126Lightly doped silicon carbide wafer and use thereof in high power devices
#127Semiconductor device and manufacturing method therefor
#128Patterned thin film graphite devices and method for making same
#129Silicon carbide semiconductor device and method for manufacturing the same
#130Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal
#131In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
#132Structure and method of making interconnect element, and multilayer wiring board including the interconnect element
#133Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
#134Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects
#135Memory device forming methods
#136Carburized silicon gate insulators for integrated circuits
#137Homoepitaxial growth of SiC on low off-axis SiC wafers
#138Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices
#139Method for the treatment of a surface of a metal-carbide substrate for use in semiconductor manufacturing processes as well as such a metal-carbide substrate
#140Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys
#141Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates
#142Lateral power diodes
#143Methods of fabricating silicon carbide devices with hybrid well regions
#144Method of forming porous diamond films for semiconductor applications
#145Uniform contact
#146Method and device with durable contact on silicon carbide
#147Fingerprint detection device and method of its manufacture, and apparatus for forming a protective film
#148Etching of substrates of light emitting devices
#149Vertical device with optimal trench shape
#150Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
#151Lithographic methods to reduce stacking fault nucleation sites
#152System and method for fabricating diodes
#153Oxygen doped SiC for Cu barrier and etch stop layer in dual damascene fabrication
#154Silicon carbide deposition for use as a low dielectric constant anti-reflective coating
#155Method of manufacturing silicon carbide semiconductor device
#156Semiconductor device and method for manufacturing same
#157Semiconductor device
#158Schottky power diode with SiCOI substrate and process for making such diode
#159Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
#160CVD plasma assisted lower dielectric constant SICOH film
#161Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
#162Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same
#163Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same
#164Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby
#165Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby
#166Post-deposition treatment to enhance properties of Si-O-C low k films
#167Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices
#168Production method of SiC monitor wafer
#169Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
#170Method of preparing a surface of a semiconductor wafer to make it epiready
#171Method of depositing dielectric films
#172Semiconductor device and method of fabricating the same