ClassID:

243642

Y10S977/854 - CPC Classification

Classification description:

Nanotechnology; Manufacture, treatment, or detection of nanostructure with scanning probe for detection of specific nanostructure sample or nanostructure-related property Semiconductor sample

Recent Application in this class:
#1
20130180018
2013-07-11

Quantitative characterization of metallic and semiconductor single-walled carbon nanotube ratios

#2
20100330345
2010-12-30

Methods utilizing scanning probe microscope tips and products thereof or produced thereby

#3
20100108907
2010-05-06

Charged-particle optical system with dual loading options

#4
20100023287
2010-01-28

Techniques for electrically characterizing tunnel junction film stacks with little or no processing

#5
20090309587
2009-12-17

Techniques for electrically characterizing tunnel junction film stacks with little or no processing

#6
20090267597
2009-10-29

Techniques for electrically characterizing tunnel junction film stacks with little or no processing

#7
20090261820
2009-10-22

Wafer for electrically characterizing tunnel junction film stacks with little or no processing

#8
20080147346
2008-06-19

Method and apparatus for aligning patterns on a substrate

#9
20070075243
2007-04-05

Scanning probe microscopy method and apparatus utilizing sample pitch

#10
20060225164
2006-10-05

Scanning probe characterization of surfaces

#11
20050181132
2005-08-18

Methods utilizing scanning probe microscope tips and products therefor or produced thereby

#12
20050172704
2005-08-11

Methods utilizing scanning probe microscope tips and products thereof or produced thereby

#13
20050130341
2005-06-16

Selective synthesis of semiconducting carbon nanotubes

#14
20050127926
2005-06-16

Method using conductive atomic force microscopy to measure contact leakage current