Y10T117/108 - CPC Classification Index

ClassID:

248386 ⎘

Y10T117/108 - CPC Classification

Classification description:

Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor; Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]

Recent Application in this class:

20190136407

2019-05-09

SINGLE CRYSTAL INGOTS WITH REDUCED DISLOCATION DEFECTS AND METHODS FOR PRODUCING SUCH INGOTS

20180100246

2018-04-12

SINGLE CRYSTAL INGOTS WITH REDUCED DISLOCATION DEFECTS AND METHODS FOR PRODUCING SUCH INGOTS

20170186937

2017-06-29

System and fabrication method of piezoelectric stack that reduces driving voltage and clamping effect

20150354087

2015-12-10

Apparatus and process for producing a crystal of semiconductor material

20150159296

2015-06-11

Crystal growth system and method for lead-contained compositions using batch auto-feeding

20140338591

2014-11-20

Converging mirror furnace

20120137975

2012-06-07

Gas flow guiding device for use in crystal-growing furnace

20110303884

2011-12-15

SiC Crystals Having Spatially Uniform Doping Impurities

20100294198

2010-11-25

Crystal growing system having multiple rotatable crucibles and using a temperature gradient method

#10

20100162946

2010-07-01

System for continuous growing of monocrystalline silicon

#11

20100154703

2010-06-24

Silica glass crucible

#12

20100034723

2010-02-11

METHOD AND APPARATUS FOR REFINING A MOLTEN MATERIAL

#13

20100018455

2010-01-28

System for forming SiC crystals having spatially uniform doping impurities

#14

20090241829

2009-10-01

Crystal growth system and method for lead-contained compositions using batch auto-feeding

#15

20090188427

2009-07-30

Device for making monocrystalline or multicrystalline materials, in particular multicrystalline silicon

#16

20090056628

2009-03-05

Process and apparatus for forming nanoparticles using radiofrequency plasmas

#17

20090038934

2009-02-12

APPARATUS AND METHOD FOR DIAMOND PRODUCTION

#18

20080196209

2008-08-21

Method and apparatus for refining a molten material

#19

20080173234

2008-07-24

Crucible and single crystal growth method using crucible

#20

20080134958

2008-06-12

System for continuous growing of monocrystalline silicon

#21

20080134957

2008-06-12

Powder metallurgy crucible for aluminum nitride crystal growth

#22

20080110394

2008-05-15

Semiconductor single crystal production device and producing method therefor

#23

20070277729

2007-12-06

Method and device for producting monocrystals

#24

20070266931

2007-11-22

Device and method for the production of monocrystalline or multicrystalline materials, in particular multicrystalline silicon

#25

20070241481

2007-10-18

Method for the growth of semiconductor ribbons

#26

20070193505

2007-08-23

Apparatus and method for diamond production

#27

20060243984

2006-11-02

Method of and system for forming SiC crystals having spatially uniform doping impurities

#28

20060174822

2006-08-10

Crucible and method of growing single crystal by using crucible

#29

20060051505

2006-03-09

Process and apparatus for forming nanoparticles using radiofrequency plasmas

#30

20050223967

2005-10-13

Powder metallurgy crucible for aluminum nitride crystal growth

#31

20050178316

2005-08-18

Method and apparatus for purification of crystal material and for making crystals therefrom and use of crystals obtained thereby

#32

20050160969

2005-07-28

Apparatus and method for diamond production

#33

20050152820

2005-07-14

High temperature high pressure capsule for processing materials in supercritical fluids

#34

20050092236

2005-05-05

System for continuous growing of monocrystalline silicon