Inventor profile of:

Claudio Resta

City:

Pavia

Country:

Italy

Published Applications:

22

Last publication date:

2019-12-26

Top Assignees for applications by Claudio Resta

The entities that hold a legal rights for patent applications filed by inventor Resta Claudio:

Recent patent applications by Resta Claudio

Claudio Resta from Pavia, IT has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2019-12-26
US20190391751A1
Physics

Methods and related devices for operating a memory array

#2 | 2019-05-23
US20190155528A1
Physics

Methods for phase-change memory array

#3 | 2018-04-05
US20180095687A1
Physics

Methods and related devices for operating a memory array

#4 | 2016-06-09
US20160162213A1
Physics

Methods for operating a memory array

#5 | 2014-12-25
US20140376306A1
Physics

Methods for a phase-change memory array

#6 | 2012-12-06
US20120307553A1
Physics

Method for reading phase change memory cells having a clamping circuit

#7 | 2012-11-15
US20120287698A1
Physics

Method for using a bit specific reference level to read a phase change memory

#8 | 2012-05-10
US20120113711A1
Physics

Using a bit specific reference level to read a memory

#9 | 2011-07-21
US20110176358A1
Physics

Reading phase change memories

#10 | 2010-11-11
US20100284212A1
Physics

Method for multilevel programming of phase change memory cells using adaptive reset pulses

#11 | 2010-07-01
US20100165713A1
Physics

Method for low power accessing a phase change memory device

#12 | 2010-07-01
US20100165712A1
Physics

Method for low-stress multilevel reading of phase change memory cells and multilevel phase change memory

#13 | 2010-06-10
US20100141335A1
Physics

Current mirror circuit, in particular for a non-volatile memory device

#14 | 2010-05-27
US20100128517A1
Physics

Phase-change memory device with discharge of leakage currents in deselected bitlines and method for discharging leakage currents in deselected bitlines of a phase-change memory device

#15 | 2009-05-07
US20090116281A1
Physics

Reading phase change memories

#16 | 2009-04-09
US20090091988A1
Physics

Writing bit alterable memories

#17 | 2009-03-26
US20090080267A1
Physics

Generating reference currents compensated for process variation in non-volatile memories

#18 | 2009-03-26
US20090080242A1
Physics

Programming a multilevel phase change memory cell

#19 | 2007-01-25
US20070019465A1
Physics

Detecting switching of access elements of phase change memory cells

#20 | 2006-10-12
US20060227592A1
Physics

Reading phase change memories

#21 | 2006-10-05
US20060221734A1
Physics

Detecting switching of access elements of phase change memory cells

#22 | 2006-10-05
US20060221712A1
Physics

Using a bit specific reference level to read a resistive memory

InventorID:

1013203 ⎘