Troy, Michigan
United States
55
2012-05-10
55
2012-09-04
These are the the leading inventors for applications assigned to Ovonyx, Inc.:
Ovonyx, Inc. based in Troy, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Using a bit specific reference level to read a memory
#2 | 2012-04-05 ✅ Patent 8,223,538 granted on 2012-07-17Semiconductor phast change memory using multiple phase change layers
#3 | 2012-03-08 ✅ Patent 8,427,862 granted on 2013-04-23Reading a phase change memory
#4 | 2011-10-06 ✅ Patent 8,634,226 granted on 2014-01-21Immunity of phase change material to disturb in the amorphous phase
#5 | 2011-09-22 ✅ Patent 8,581,223 granted on 2013-11-12Memory device and method of making same
#6 | 2011-07-14 ✅ Patent 8,164,949 granted on 2012-04-24Reducing drift in chalcogenide devices
#7 | 2011-06-30 ✅ Patent 8,178,385 granted on 2012-05-15Phase change memory that switches between crystalline phases
#8 | 2011-06-30 ✅ Patent 8,440,501 granted on 2013-05-14Memory device
#9 | 2011-05-19 ✅ Patent 8,089,059 granted on 2012-01-03Programmable resistance memory element
#10 | 2011-05-05 ✅ Patent 8,077,498 granted on 2011-12-13Reading a phase change memory
#11 | 2011-04-21 ✅ Patent 7,974,149 granted on 2011-07-05Thin-film memory system equipped with a thin-film address decoder and memory controller
#12 | 2011-02-10 ✅ Patent 8,067,761 granted on 2011-11-29Self-aligned memory cells and method for forming
#13 | 2010-11-04 ✅ Patent 8,093,577 granted on 2012-01-10Three-dimensional phase-change memory array
#14 | 2010-09-16 ✅ Patent 7,957,207 granted on 2011-06-07Programmable resistance memory with interface circuitry for providing read information to external circuitry for processing
#15 | 2010-09-02 ✅ Patent 7,935,567 granted on 2011-05-03Active material devices with containment layer
#16 | 2010-07-22 ✅ Patent 7,978,508 granted on 2011-07-12Reduction of drift in phase-change memory via thermally-managed programming
#17 | 2010-07-22 ✅ Patent 8,009,455 granted on 2011-08-30Programmable resistance memory
#18 | 2010-06-03 ✅ Patent 8,084,789 granted on 2011-12-27Phase change memory with ovonic threshold switch
#19 | 2010-05-13 ✅ Patent 8,111,546 granted on 2012-02-07Optical ovonic threshold switch
#20 | 2010-05-06 ✅ Patent 7,983,104 granted on 2011-07-19Page mode access for non-volatile memory arrays
#21 | 2010-05-06 ✅ Patent 8,120,940 granted on 2012-02-21Programmable resistance memory
#22 | 2010-04-15 ✅ Patent 7,961,495 granted on 2011-06-14Programmable resistance memory with feedback control
#23 | 2010-01-28 ✅ Patent 8,120,943 granted on 2012-02-21Accessing a phase change memory
#24 | 2009-12-10 ✅ Patent 7,920,414 granted on 2011-04-05Asymmetric-threshold three-terminal switching device
#25 | 2009-12-10 ✅ Patent 7,859,895 granted on 2010-12-28Standalone thin film memory
#26 | 2009-12-10 ✅ Patent 8,053,753 granted on 2011-11-08Thin film logic circuitry
#27 | 2009-11-19 ✅ Patent 8,259,515 granted on 2012-09-04Circuitry for reading phase-change memory cells having a clamping circuit
#28 | 2009-10-08 ✅ Patent 7,936,593 granted on 2011-05-03Reducing drift in chalcogenide devices
#29 | 2009-10-01 ✅ Patent 7,990,761 granted on 2011-08-02Immunity of phase change material to disturb in the amorphous phase
#30 | 2009-09-17 ✅ Patent 7,838,341 granted on 2010-11-23Self-aligned memory cells and method for forming
#31 | 2009-09-10 ✅ Patent 7,994,034 granted on 2011-08-09Temperature and pressure control methods to fill features with programmable resistance and switching devices
#32 | 2009-06-11 ✅ Patent 7,943,922 granted on 2011-05-17Nitrogenated carbon electrode for chalcogenide device and method of making same
#33 | 2009-05-07 ✅ Patent 7,936,584 granted on 2011-05-03Reading phase change memories
#34 | 2009-05-07 ✅ Patent 7,964,861 granted on 2011-06-21Method and apparatus for reducing programmed volume of phase change memory
#35 | 2009-04-30 ✅ Patent 7,967,994 granted on 2011-06-28Method and apparatus for chalcogenide device formation
#36 | 2009-04-30 ✅ Patent 8,098,517 granted on 2012-01-17Method of restoring variable resistance memory device
#37 | 2009-03-05 ✅ Patent 7,906,772 granted on 2011-03-15Memory device
#38 | 2009-02-05 ✅ Patent 7,839,674 granted on 2010-11-23Programmable matrix array with chalcogenide material
#39 | 2009-01-22 ✅ Patent 7,858,152 granted on 2010-12-28Chemical vapor deposition of chalcogenide materials via alternating layers
#40 | 2009-01-08 ✅ Patent 7,849,712 granted on 2010-12-14Reading a phase change memory
#41 | 2008-11-06 ✅ Patent 7,864,567 granted on 2011-01-04Programming a normally single phase chalcogenide material for use as a memory of FPLA
#42 | 2008-11-06 ✅ Patent 8,000,125 granted on 2011-08-16Method of programming multi-layer chalcogenide devices
#43 | 2008-11-06 ✅ Patent 7,978,506 granted on 2011-07-12Thin film logic device and system
#44 | 2008-09-18 ✅ Patent 7,969,769 granted on 2011-06-28Multi-terminal chalcogenide logic circuits
#45 | 2008-09-18 ✅ Patent 7,952,087 granted on 2011-05-31Phase change device with offset contact
#46 | 2008-09-11 ✅ Patent 7,833,823 granted on 2010-11-16Programmable resistance memory element and method for making same
#47 | 2008-02-14 ✅ Patent 7,935,951 granted on 2011-05-03Composite chalcogenide materials and devices
#48 | 2008-02-14 ✅ Patent 7,838,864 granted on 2010-11-23Chalcogenide switch with laser recrystallized diode isolation device and use thereof in three dimensional memory arrays
#49 | 2007-05-03 ✅ Patent 8,188,454 granted on 2012-05-29Forming a phase change memory with an ovonic threshold switch
#50 | 2007-03-01 ✅ Patent 7,902,536 granted on 2011-03-08Memory device and method of making same
#51 | 2006-11-16 ✅ Patent 7,910,904 granted on 2011-03-22Multi-level phase change memory
#52 | 2006-10-12 ✅ Patent 8,036,013 granted on 2011-10-11Using higher current to read a triggered phase change memory
#53 | 2006-10-05 ✅ Patent 8,116,159 granted on 2012-02-14Using a bit specific reference level to read a resistive memory
#54 | 2006-07-13 ✅ Patent 7,923,724 granted on 2011-04-12Phase change memory that switches between crystalline phases
#55 | 2006-03-23 ✅ Patent 7,906,391 granted on 2011-03-15Reducing leakage currents in memories with phase-change material
203487 ⎘