Pierre Tomasini

Semiconductor structures including stacks of indium gallium nitride layers

In-situ pre-clean prior to epitaxy

Deposition methods for the formation of III/V semiconductor materials, and related structures

Deposition methods for the formation of III/V semiconductor materials, and related structures

III-V semiconductor structures with diminished pit defects and methods for forming the same

Methods of forming III/V semiconductor materials, and semiconductor structures formed using such methods

Epitaxial growth of relaxed silicon germanium layers

Methods of selectively depositing silicon-containing films

Inhibitors for selective deposition of silicon containing films

Stressor for engineered strain on channel

Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition

Method to planarize and reduce defect density of silicon germanium

METHODS AND SYSTEMS FOR SELECTIVELY DEPOSITING SI-CONTAINING FILMS USING CHLOROPOLYSILANES

Semiconductor buffer structures

Apparatus and method for depositing silicon germanium films

Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition

Selective deposition of silicon-containing films

Epitaxial growth of relaxed silicon germanium layers