Inventor profile of:

Bin Yang

City:

San Carlos, California

Country:

United States

Published Applications:

13

Last publication date:

2015-12-31

Top Assignees for applications by Bin Yang

The entities that hold a legal rights for patent applications filed by inventor Yang Bin:

Recent patent applications by Yang Bin

Bin Yang from San Carlos, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2015-12-31
US20150380309A1
Electricity

Metal-insulator-semiconductor (MIS) contact with controlled defect density

#2 | 2015-04-02
US20150093914A1
Electricity

METHODS FOR DEPOSITING AN ALUMINUM OXIDE LAYER OVER GERMANIUM SUSBTRATES IN THE FABRICATION OF INTEGRATED CIRCUITS

#3 | 2015-04-02
US20150093889A1
Electricity

METHODS FOR REMOVING A NATIVE OXIDE LAYER FROM GERMANIUM SUSBTRATES IN THE FABRICATION OF INTEGRATED CIRCUITS

#4 | 2015-04-02
US20150093887A1
Electricity

METHODS FOR REMOVING A NATIVE OXIDE LAYER FROM GERMANIUM SUSBTRATES IN THE FABRICATION OF INTEGRATED CIRCUITSI

#5 | 2015-01-01
US20150001587A1
Electricity

Methods of forming group III-V semiconductor materials on group IV substrates and the resulting substrate structures

#6 | 2014-02-27
US20140055152A1
Physics

Circular transmission line methods compatible with combinatorial processing of semiconductors

#7 | 2014-02-06
US20140038402A1
Electricity

Dual work function FinFET structures and methods for fabricating the same

#8 | 2013-10-10
US20130267090A1
Electricity

Method to control metal semiconductor micro-structure

#9 | 2013-07-25
US20130189839A1
Electricity

METHOD TO FORM SILICIDE CONTACT IN TRENCHES

#10 | 2013-07-25
US20130187171A1
Electricity

Method to form silicide contact in trenches

#11 | 2013-03-21
US20130069124A1
Electricity

MOSFET integrated circuit with uniformly thin silicide layer and methods for its manufacture

#12 | 2013-02-28
US20130049200A1
Electricity

SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF SEMICONDUCTOR SUBSTRATE

#13 | 2013-02-28
US20130049199A1
Electricity

SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF SEMICONDUCTOR SUBSTRATE

InventorID:

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