Cayman Islands
31
2020-02-27
31
2020-11-10
These are the the leading inventors for applications assigned to Globalfoundries Inc.:
Globalfoundries Inc. based in , KY has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Dual metal-insulator-semiconductor contact structure and formulation method
#2 | 2019-07-04 ✅ Patent 10,622,357 granted on 2020-04-14FinFET including tunable fin height and tunable fin width ratio
#3 | 2019-05-23 ✅ Patent 10,818,599 granted on 2020-10-27Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts
#4 | 2019-03-07 ✅ Patent 10,585,346 granted on 2020-03-10Semiconductor fabrication design rule loophole checking for design for manufacturability optimization
#5 | 2018-12-27 ✅ Patent 10,593,782 granted on 2020-03-17Self-aligned finFET formation
#6 | 2018-11-15 ✅ Patent 10,535,606 granted on 2020-01-14Dual metal-insulator-semiconductor contact structure and formulation method
#7 | 2018-07-26 ✅ Patent 10,388,731 granted on 2019-08-20Stacked nanowire device width adjustment by gas cluster ion beam (GCIB)
#8 | 2018-04-12 ✅ Patent 10,431,682 granted on 2019-10-01Vertical vacuum channel transistor
#9 | 2018-01-04 ✅ Patent 10,643,894 granted on 2020-05-05Surface area and Schottky barrier height engineering for contact trench epitaxy
#10 | 2018-01-04 ✅ Patent 10,643,893 granted on 2020-05-05Surface area and Schottky barrier height engineering for contact trench epitaxy
#11 | 2017-06-15 ✅ Patent 10,388,602 granted on 2019-08-20Local interconnect structure including non-eroded contact via trenches
#12 | 2017-02-02 ✅ Patent 10,355,086 granted on 2019-07-16High doped III-V source/drain junctions for field effect transistors
#13 | 2017-01-12 ✅ Patent 10,749,031 granted on 2020-08-18Large area contacts for small transistors
#14 | 2017-01-12 ✅ Patent 9,576,956 granted on 2017-02-21Method and structure of forming controllable unmerged epitaxial material
#15 | 2017-01-05 ✅ Patent 10,396,000 granted on 2019-08-27Test structure macro for monitoring dimensions of deep trench isolation regions and local trench isolation regions
#16 | 2016-09-27 ✅ Patent 9,455,331 granted on 2016-09-27Method and structure of forming controllable unmerged epitaxial material
#17 | 2016-01-05 ✅ Patent 9,230,913 granted on 2016-01-05Metallization layers configured for reduced parasitic capacitance
#18 | 2015-12-24 ✅ Patent 9,263,327 granted on 2016-02-16Minimizing void formation in semiconductor vias and trenches
#19 | 2015-11-26 ✅ Patent 9,418,903 granted on 2016-08-16Structure and method for effective device width adjustment in finFET devices using gate workfunction shift
#20 | 2015-07-30 ✅ Patent 9,195,132 granted on 2015-11-24Mask structures and methods of manufacturing
#21 | 2015-05-28 ✅ Patent 9,356,046 granted on 2016-05-31Structure and method for forming CMOS with NFET and PFET having different channel materials
#22 | 2015-04-30 ✅ Patent 9,501,128 granted on 2016-11-22Cooperative reduced power mode suspension for high input/output (‘I/O’) workloads
#23 | 2014-07-03 ✅ Patent 9,536,796 granted on 2017-01-03Multiple manufacturing line qualification
#24 | 2014-01-16 ✅ Patent 8,859,388 granted on 2014-10-14Sealed shallow trench isolation region
#25 | 2013-10-10 ✅ Patent 8,987,135 granted on 2015-03-24Method to control metal semiconductor micro-structure
#26 | 2013-07-11 ✅ Patent 8,618,617 granted on 2013-12-31Field effect transistor device
#27 | 2013-01-03 ✅ Patent 8,940,634 granted on 2015-01-27Overlapping contacts for semiconductor device
#28 | 2012-11-29 ✅ Patent 8,786,030 granted on 2014-07-22Gate-last fabrication of quarter-gap MGHK FET
#29 | 2011-12-29 ✅ Patent 8,492,234 granted on 2013-07-23Field effect transistor device
#30 | 2011-12-22 ✅ Patent 8,592,296 granted on 2013-11-26Gate-last fabrication of quarter-gap MGHK FET
#31 | 2011-10-06 ✅ Patent 8,404,589 granted on 2013-03-26Silicide contact formation
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