Livermore, California
United States
35
2023-10-19
The entities that hold a legal rights for patent applications filed by inventor Clark Robert D.:
Robert D. Clark from Livermore, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Transistor stack of vertical channel ferroelectric FETs and methods of forming the transistor stack
#2 | 2023-01-12SELECTIVE FILM FORMATION USING A SELF-ASSEMBLED MONOLAYER
#3 | 2022-08-11LIQUID PHASE CONFORMAL SILICON OXIDE SPIN-ON DEPOSITION
#4 | 2021-10-21Crystalline dielectric systems for interconnect circuit manufacturing
#5 | 2019-08-29Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
#6 | 2018-02-15Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
#7 | 2017-11-30Wrap-around contact integration scheme
#8 | 2017-10-12Self-aligned spacer formation
#9 | 2017-09-21Solid source doping for source and drain extension doping
#10 | 2017-05-25Metal-insulator-semiconductor (MIS) contacts and method of forming
#11 | 2017-04-20Selective bottom-up metal feature filling for interconnects
#12 | 2017-03-23GERMANIUM-CONTAINING SEMICONDUCTOR DEVICE AND METHOD OF FORMING
#13 | 2016-12-29Sidewall protection scheme for contact formation
#14 | 2016-09-08Method of controlling solid phase diffusion of boron dopants to form ultra-shallow doping regions
#15 | 2016-03-31Liquid phase atomic layer deposition
#16 | 2015-10-01METHOD OF FORMING THIN METAL AND SEMI-METAL LAYERS BY THERMAL REMOTE OXYGEN SCAVENGING
#17 | 2015-09-10Atomic Layer Deposition of Aluminum-doped High-k Films
#18 | 2015-09-03Method of enhancing high-k film nucleation rate and electrical mobility in a semiconductor device by microwave plasma treatment
#19 | 2015-08-13Method of surface functionalization for high-K deposition
#20 | 2015-03-12METHOD FOR FORMING ULTRA-SHALLOW BORON DOPING REGIONS BY SOLID PHASE DIFFUSION
#21 | 2014-09-18Processing system for electromagnetic wave treatment of a substrate at microwave frequencies
#22 | 2014-06-26Method for forming ultra-shallow doping regions by solid phase diffusion
#23 | 2014-04-24Hybrid gate last integration scheme for multi-layer high-k gate stacks
#24 | 2014-03-13Method for forming ultra-shallow boron doping regions by solid phase diffusion
#25 | 2014-01-16Nitridation of atomic layer deposited high-k dielectrics using trisilylamine
#26 | 2013-12-26Method for depositing dielectric films
#27 | 2013-10-03Method of integrating buried threshold voltage adjustment layers for CMOS processing
#28 | 2013-08-01Method of forming thin metal and semi-metal layers by thermal remote oxygen scavenging
#29 | 2013-02-28Diffused cap layers for modifying high-k gate dielectrics and interface layers
#30 | 2012-10-04Method for forming ultra-shallow boron doping regions by solid phase diffusion
#31 | 2012-10-04Method for forming ultra-shallow doping regions by solid phase diffusion
#32 | 2012-04-05METHOD FOR FORMING A PATTERN AND A SEMICONDUCTOR DEVICE MANUFACTURING METHOD
#33 | 2011-08-23Method of integrating stress into a gate stack
#34 | 2011-07-07METHOD OF FORMING MIXED RARE EARTH OXIDE AND ALUMINATE FILMS BY ATOMIC LAYER DEPOSITION
#35 | 2009-06-25Method of forming high-dielectric constant films for semiconductor devices
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