Inventor profile of:

Robert D. Clark

City:

Livermore, California

Country:

United States

Published Applications:

35

Last publication date:

2023-10-19

Top Assignees for applications by Robert D. Clark

The entities that hold a legal rights for patent applications filed by inventor Clark Robert D.:

Recent patent applications by Clark Robert D.

Robert D. Clark from Livermore, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-10-19
US20230335555A1
Electricity

Transistor stack of vertical channel ferroelectric FETs and methods of forming the transistor stack

#2 | 2023-01-12
US20230009688A1
Electricity

SELECTIVE FILM FORMATION USING A SELF-ASSEMBLED MONOLAYER

#3 | 2022-08-11
US20220254630A1
Electricity

LIQUID PHASE CONFORMAL SILICON OXIDE SPIN-ON DEPOSITION

#4 | 2021-10-21
US20210328049A1
Electricity

Crystalline dielectric systems for interconnect circuit manufacturing

#5 | 2019-08-29
US20190267249A1
Electricity

Atomic layer etching using a boron-containing gas and hydrogen fluoride gas

#6 | 2018-02-15
US20180047577A1
Electricity

Atomic layer etching using a boron-containing gas and hydrogen fluoride gas

#7 | 2017-11-30
US20170345904A1
Electricity

Wrap-around contact integration scheme

#8 | 2017-10-12
US20170294310A1
Electricity

Self-aligned spacer formation

#9 | 2017-09-21
US20170271212A1
Electricity

Solid source doping for source and drain extension doping

#10 | 2017-05-25
US20170148888A1
Electricity

Metal-insulator-semiconductor (MIS) contacts and method of forming

#11 | 2017-04-20
US20170110368A1
Electricity

Selective bottom-up metal feature filling for interconnects

#12 | 2017-03-23
US20170084464A1
Electricity

GERMANIUM-CONTAINING SEMICONDUCTOR DEVICE AND METHOD OF FORMING

#13 | 2016-12-29
US20160379870A1
Electricity

Sidewall protection scheme for contact formation

#14 | 2016-09-08
US20160260611A1
Electricity

Method of controlling solid phase diffusion of boron dopants to form ultra-shallow doping regions

#15 | 2016-03-31
US20160090652A1
Chemistry; metallurgy

Liquid phase atomic layer deposition

#16 | 2015-10-01
US20150279691A1
Electricity

METHOD OF FORMING THIN METAL AND SEMI-METAL LAYERS BY THERMAL REMOTE OXYGEN SCAVENGING

#17 | 2015-09-10
US20150255267A1
Electricity

Atomic Layer Deposition of Aluminum-doped High-k Films

#18 | 2015-09-03
US20150249009A1
Electricity

Method of enhancing high-k film nucleation rate and electrical mobility in a semiconductor device by microwave plasma treatment

#19 | 2015-08-13
US20150228478A1
Electricity

Method of surface functionalization for high-K deposition

#20 | 2015-03-12
US20150072510A1
Electricity

METHOD FOR FORMING ULTRA-SHALLOW BORON DOPING REGIONS BY SOLID PHASE DIFFUSION

#21 | 2014-09-18
US20140273532A1
Electricity

Processing system for electromagnetic wave treatment of a substrate at microwave frequencies

#22 | 2014-06-26
US20140179091A1
Electricity

Method for forming ultra-shallow doping regions by solid phase diffusion

#23 | 2014-04-24
US20140110791A1
Electricity

Hybrid gate last integration scheme for multi-layer high-k gate stacks

#24 | 2014-03-13
US20140073122A1
Electricity

Method for forming ultra-shallow boron doping regions by solid phase diffusion

#25 | 2014-01-16
US20140017907A1
Electricity

Nitridation of atomic layer deposited high-k dielectrics using trisilylamine

#26 | 2013-12-26
US20130344248A1
Chemistry; metallurgy

Method for depositing dielectric films

#27 | 2013-10-03
US20130256803A1
Electricity

Method of integrating buried threshold voltage adjustment layers for CMOS processing

#28 | 2013-08-01
US20130196515A1
Electricity

Method of forming thin metal and semi-metal layers by thermal remote oxygen scavenging

#29 | 2013-02-28
US20130052814A1
Electricity

Diffused cap layers for modifying high-k gate dielectrics and interface layers

#30 | 2012-10-04
US20120252197A1
Electricity

Method for forming ultra-shallow boron doping regions by solid phase diffusion

#31 | 2012-10-04
US20120252196A1
Electricity

Method for forming ultra-shallow doping regions by solid phase diffusion

#32 | 2012-04-05
US20120083127A1
Electricity

METHOD FOR FORMING A PATTERN AND A SEMICONDUCTOR DEVICE MANUFACTURING METHOD

#33 | 2011-08-23
US12895696
-

Method of integrating stress into a gate stack

#34 | 2011-07-07
US20110165328A1
Electricity

METHOD OF FORMING MIXED RARE EARTH OXIDE AND ALUMINATE FILMS BY ATOMIC LAYER DEPOSITION

#35 | 2009-06-25
US20090163012A1
Electricity

Method of forming high-dielectric constant films for semiconductor devices

InventorID:

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