Mark Clark

Selector Elements

Current selectors formed using single stack structures

Low temperature deposition of low loss dielectric layers in superconducting circuits

Using Metal Silicides as Electrodes for MSM Stack in Selector for Non-Volatile Memory Application

Diamond like carbon (DLC) as a thermal sink in a selector stack for non-volatile memory application

Simultaneous Carbon and Nitrogen Doping of Si in MSM Stack as a Selector Device for Non-Volatile Memory Application

Diamond Like Carbon (DLC) in a Semiconductor Stack as a Selector for Non-Volatile Memory Application

Photo-induced MSM stack

SiC—Si3N4 nanolaminates as a semiconductor for MSM snapback selector devices

Tunneling barrier creation in MSM stack as a selector device for non-volatile memory application

TiOx based selector element

Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same

Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same

Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same

Dual insulating layer diode with asymmetric interface state and method of fabrication

Damascene process for carbon memory element with MIIM diode

Damascene process for carbon memory element with MIIM diode

Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same

MEMORY CELL WITH PLANARIZED CARBON NANOTUBE LAYER AND METHODS OF FORMING THE SAME

Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same

Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same

Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same