Montecito, California
United States
87
2025-07-03
The entities that hold a legal rights for patent applications filed by inventor Mishra Umesh:
Umesh Mishra from Montecito, US has applied for patents for these inventions. The list has both pending applications and granted patents:
LATERAL III-NITRIDE DEVICES INCLUDING A VERTICAL GATE MODULE
#2 | 2025-06-05HIGH VOLTAGE III-N DEVICES AND STRUCTURES WITH REDUCED CURRENT DEGRADATION
#3 | 2025-03-27N-POLAR DEVICES INCLUDING A DEPLETING LAYER WITH IMPROVED CONDUCTIVITY
#4 | 2024-12-19MODULE ASSEMBLY OF MULTIPLE SEMICONDUCTOR DEVICES WITH INSULATING SUBSTRATES
#5 | 2023-12-28WIDE BANDGAP TRANSISTORS WITH GATE-SOURCE FIELD PLATES
#6 | 2023-10-19III-NITRIDE DEVICES WITH THROUGH-VIA STRUCTURES
#7 | 2023-09-21III-NITRIDE DEVICES INCLUDING A DEPLETING LAYER
#8 | 2022-05-19N-polar devices including a depleting layer with improved conductivity
#9 | 2021-02-11Enhancement mode III-nitride devices having an Al-SiO gate insulator
#10 | 2020-10-29Lateral III-nitride devices including a vertical gate module
#11 | 2020-07-02III-nitride devices including a graded depleting layer
#12 | 2020-04-16Lateral III-nitride devices including a vertical gate module
#13 | 2019-06-27III-nitride devices including a graded depleting layer
#14 | 2018-06-07III-nitride devices including a graded depleting layer
#15 | 2018-04-12III-Nitride transistor including a III-N depleting layer
#16 | 2017-12-21Wide bandgap field effect transistors with source connected field plates
#17 | 2017-01-26Methods of forming reverse side engineered III-nitride devices
#18 | 2016-12-08Enhancement mode III-N HEMTs
#19 | 2016-11-24III-nitride transistor including a p-type depleting layer
#20 | 2016-09-01GALLIUM NITRIDE POWER DEVICES
#21 | 2016-06-30Forming enhancement mode III-nitride devices
#22 | 2016-03-10Enhancement mode III-N HEMTs
#23 | 2016-03-03Semiconductor devices with integrated hole collectors
#24 | 2016-02-11Electrodes for semiconductor devices and methods of forming the same
#25 | 2016-02-11Semiconductor electronic components with integrated current limiters
#26 | 2016-02-04High voltage GaN transistor
#27 | 2016-01-21Forming enhancement mode III-nitride devices
#28 | 2015-11-19Transistors with isolation regions
#29 | 2015-10-08N-polar III-nitride transistors
#30 | 2015-02-26Semiconductor devices with guard rings
#31 | 2015-02-12III-N device structures and methods
#32 | 2015-01-22III-nitride transistor including a p-type depleting layer
#33 | 2014-12-25Method of forming electronic components with increased reliability
#34 | 2014-12-11Group III nitride based flip-chip integrated circuit and method for fabricating
#35 | 2014-12-11Enhancement mode III-N HEMTs
#36 | 2014-11-20High voltage III-nitride semiconductor devices
#37 | 2014-10-09Semiconductor electronic components with integrated current limiters
#38 | 2014-08-21Transistors with isolation regions
#39 | 2014-08-21Electrodes for semiconductor devices and methods of forming the same
#40 | 2014-04-17Gallium nitride power devices
#41 | 2014-04-10III-N device structures and methods
#42 | 2014-04-03Method of forming electronic components with increased reliability
#43 | 2014-02-27Semiconductor heterostructure diodes
#44 | 2014-02-13Semiconductor electronic components and circuits
#45 | 2014-01-16Semiconductor electronic components with integrated current limiters
#46 | 2014-01-02Semiconductor devices with integrated hole collectors
#47 | 2013-11-28Enhancement mode III-N HEMTs
#48 | 2013-10-10N-polar III-nitride transistors
#49 | 2013-08-15Methods of forming reverse side engineered III-nitride devices
#50 | 2013-07-11Gallium nitride power devices
#51 | 2013-06-06Compact electric appliance for providing gas for combustion
#52 | 2013-04-11High power semiconductor electronic components with increased reliability
#53 | 2013-03-07Semiconductor devices with guard rings
#54 | 2012-12-13Group III nitride based flip-chip integrated circuit and method for fabricating
#55 | 2012-10-25Semiconductor heterostructure diodes
#56 | 2012-09-06High voltage GaN transistor
#57 | 2012-08-02III-N device structures and methods
#58 | 2012-07-12Enhancement mode gallium nitride power devices
#59 | 2012-06-21Transistors with isolation regions
#60 | 2011-08-11Semiconductor electronic components and circuits
#61 | 2011-07-14Wide bandgap HEMTS with source connected field plates
#62 | 2011-06-16Reverse side engineered III-nitride devices
#63 | 2011-06-02Semiconductor heterostructure diodes
#64 | 2011-05-26Enhancement mode gallium nitride power devices
#65 | 2011-05-19High voltage GaN transistors
#66 | 2011-03-17Group III nitride based flip-chip integrated circuit and method for fabricating
#67 | 2010-11-18High voltage III-nitride semiconductor devices
#68 | 2010-06-10Semiconductor heterostructure diodes
#69 | 2010-05-06High voltage GaN transistors
#70 | 2009-10-29Wide bandgap transistors with multiple field plates
#71 | 2009-10-29Enhancement mode III-N HEMTs
#72 | 2009-09-24Wide bandgap HEMTs with source connected field plates
#73 | 2009-06-11Insulated gate e-mode transistors
#74 | 2009-06-11Compact electric appliance for providing gas for combustion
#75 | 2009-05-28Compact electric appliance providing hydrogen injection for improved performance of internal combustion engines
#76 | 2009-03-19Growing N-polar III-nitride Structures
#77 | 2009-03-19Enhancement mode gallium nitride power devices
#78 | 2009-03-19GALLIUM NITRIDE DIODES AND INTEGRATED COMPONENTS
#79 | 2008-12-04Electrolysis transistor
#80 | 2008-05-22High voltage GaN transistors
#81 | 2007-10-11High efficiency and/or high power density wide bandgap transistors
#82 | 2006-10-12Devices having thick semi-insulating epitaxial gallium nitride layer
#83 | 2006-09-14Wide bandgap transistors with gate-source field plates
#84 | 2006-01-12Wide bandgap HEMTs with source connected field plates
#85 | 2005-11-17Wide bandgap transistors with multiple field plates
#86 | 2005-11-17Wide bandgap field effect transistors with source connected field plates
#87 | 2005-03-31Group III nitride based flip-chip integrated circuit and method for fabricating
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