Inventor profile of:

PAUL S. MCLAUGHLIN

City:

POUGHKEEPSIE, New York

Country:

United States

Published Applications:

21

Last publication date:

2018-10-18

Top Assignees for applications by PAUL S. MCLAUGHLIN

The entities that hold a legal rights for patent applications filed by inventor MCLAUGHLIN PAUL S.:

Recent patent applications by MCLAUGHLIN PAUL S.

PAUL S. MCLAUGHLIN from POUGHKEEPSIE, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2018-10-18
US20180300599A1
Physics

Metallic synapses for neuromorphic and evolvable hardware

#2 | 2017-06-22
US20170176514A1
Physics

Electromigration test structure for Cu barrier integrity and blech effect evaluations

#3 | 2017-05-25
US20170146592A1
Physics

On-chip sensor for monitoring active circuits on integrated circuit (IC) chips

#4 | 2016-10-18
US14973497
Electricity

Electromigration test structure for Cu barrier integrity and blech effect evaluations

#5 | 2015-09-17
US20150262899A1
Electricity

Method and structure for determining thermal cycle reliability

#6 | 2012-05-17
US20120119366A1
Electricity

Electromigration resistant via-to-line interconnect

#7 | 2010-07-01
US20100164116A1
Electricity

Electromigration resistant via-to-line interconnect

#8 | 2009-06-11
US20090146143A1
Electricity

Test structure for determining optimal seed and liner layer thicknesses for dual damascene processing

#9 | 2009-01-01
US20090006014A1
Electricity

Non-Destructive Electrical Characterization Macro and Methodology for In-Line Interconnect Spacing Monitoring

#10 | 2008-09-25
US20080231312A1
Physics

Structure for modeling stress-induced degradation of conductive interconnects

#11 | 2008-09-11
US20080217777A1
Electricity

Method of forming an embedded barrier layer for protection from chemical mechanical polishing process

#12 | 2008-07-24
US20080174334A1
Physics

Method for prediction of premature dielectric breakdown in a semiconductor

#13 | 2008-05-08
US20080107149A1
Physics

Structure for monitoring stress-induced degradation of conductive interconnects

#14 | 2008-01-31
US20080026567A1
Electricity

Increasing electromigration lifetime and current density in IC using vertically upwardly extending dummy via

#15 | 2007-05-31
US20070120232A1
Electricity

Laser fuse structures for high power applications

#16 | 2007-05-24
US20070115018A1
Physics

Structure and method for monitoring stress-induced degradation of conductive interconnects

#17 | 2007-04-19
US20070087555A1
Electricity

Increasing electromigration lifetime and current density in IC using vertically upwardly extending dummy via

#18 | 2007-03-15
US20070057374A1
Electricity

Embedded barrier for dielectric encapsulation

#19 | 2006-12-14
US20060281338A1
Electricity

METHOD FOR PREDICTION OF PREMATURE DIELECTRIC BREAKDOWN IN A SEMICONDUCTOR

#20 | 2006-10-05
US20060223242A1
Electricity

Method of forming a crack stop void in a low-k dielectric layer between adjacent fuses

#21 | 2006-02-07
US10214546
-

Test structure for locating electromigration voids in dual damascene interconnects

InventorID:

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