POUGHKEEPSIE, New York
United States
21
2018-10-18
The entities that hold a legal rights for patent applications filed by inventor MCLAUGHLIN PAUL S.:
PAUL S. MCLAUGHLIN from POUGHKEEPSIE, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Metallic synapses for neuromorphic and evolvable hardware
#2 | 2017-06-22Electromigration test structure for Cu barrier integrity and blech effect evaluations
#3 | 2017-05-25On-chip sensor for monitoring active circuits on integrated circuit (IC) chips
#4 | 2016-10-18Electromigration test structure for Cu barrier integrity and blech effect evaluations
#5 | 2015-09-17Method and structure for determining thermal cycle reliability
#6 | 2012-05-17Electromigration resistant via-to-line interconnect
#7 | 2010-07-01Electromigration resistant via-to-line interconnect
#8 | 2009-06-11Test structure for determining optimal seed and liner layer thicknesses for dual damascene processing
#9 | 2009-01-01Non-Destructive Electrical Characterization Macro and Methodology for In-Line Interconnect Spacing Monitoring
#10 | 2008-09-25Structure for modeling stress-induced degradation of conductive interconnects
#11 | 2008-09-11Method of forming an embedded barrier layer for protection from chemical mechanical polishing process
#12 | 2008-07-24Method for prediction of premature dielectric breakdown in a semiconductor
#13 | 2008-05-08Structure for monitoring stress-induced degradation of conductive interconnects
#14 | 2008-01-31Increasing electromigration lifetime and current density in IC using vertically upwardly extending dummy via
#15 | 2007-05-31Laser fuse structures for high power applications
#16 | 2007-05-24Structure and method for monitoring stress-induced degradation of conductive interconnects
#17 | 2007-04-19Increasing electromigration lifetime and current density in IC using vertically upwardly extending dummy via
#18 | 2007-03-15Embedded barrier for dielectric encapsulation
#19 | 2006-12-14METHOD FOR PREDICTION OF PREMATURE DIELECTRIC BREAKDOWN IN A SEMICONDUCTOR
#20 | 2006-10-05Method of forming a crack stop void in a low-k dielectric layer between adjacent fuses
#21 | 2006-02-07Test structure for locating electromigration voids in dual damascene interconnects
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