Inventor profile of:

Thomas Jongwan Kwon

City:

Dublin, California

Country:

United States

Published Applications:

14

Last publication date:

2023-09-21

Top Assignees for applications by Thomas Jongwan Kwon

The entities that hold a legal rights for patent applications filed by inventor Kwon Thomas Jongwan:

Recent patent applications by Kwon Thomas Jongwan

Thomas Jongwan Kwon from Dublin, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-09-21
US20230298893A1
Electricity

TUNGSTEN DEFLUORINATION BY HIGH PRESSURE TREATMENT

#2 | 2020-03-26
US20200098574A1
Electricity

Tungsten defluorination by high pressure treatment

#3 | 2019-06-20
US20190185996A1
Chemistry; metallurgy

Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices

#4 | 2019-04-25
US20190122924A1
Electricity

Method and apparatus for depositing cobalt in a feature

#5 | 2018-11-29
US20180342396A1
Electricity

Tungsten defluorination by high pressure treatment

#6 | 2018-09-27
US20180277370A1
Electricity

Hybrid carbon hardmask for lateral hardmask recess reduction

#7 | 2018-08-16
US20180233359A1
Electricity

Self-aligned nanodots for 3D NAND flash memory

#8 | 2018-02-15
US20180047743A1
Electricity

3D CTF integration using hybrid charge trap layer of sin and self aligned SiGe nanodot

#9 | 2017-07-20
US20170207088A1
Electricity

Hybrid carbon hardmask for lateral hardmask recess reduction

#10 | 2017-06-22
US20170178956A1
Electricity

Method and apparatus for depositing cobalt in a feature

#11 | 2016-10-06
US20160293617A1
Electricity

Vertical floating gate NAND with selectively deposited ALD metal films

#12 | 2016-10-06
US20160293609A1
Electricity

Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices

#13 | 2015-12-31
US20150380422A1
Electricity

Vertical floating gate NAND with selectively deposited ALD metal films

#14 | 2015-12-24
US20150371709A1
Physics

Three dimensional vertical NAND device with floating gates

InventorID:

1403966 ⎘