Inventor profile of:

Angela HUI

City:

Fremont, California

Country:

United States

Published Applications:

30

Last publication date:

2016-02-04

Top Assignees for applications by Angela HUI

The entities that hold a legal rights for patent applications filed by inventor HUI Angela:

Recent patent applications by HUI Angela

Angela HUI from Fremont, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2016-02-04
US20160035576A1
Electricity

Split-gate semiconductor device with L-shaped gate

#2 | 2014-06-19
US20140167138A1
Electricity

HTO offset for long leffective, better device performance

#3 | 2014-01-02
US20140001537A1
Electricity

SELF-ALIGNED SI RICH NITRIDE CHARGE TRAP LAYER ISOLATION FOR CHARGE TRAP FLASH MEMORY

#4 | 2013-03-28
US20130078795A1
Electricity

Etch stop layer for memory cell reliability improvement

#5 | 2012-11-27
US11008240
-

Etch stop layer for memory cell reliability improvement

#6 | 2012-07-19
US20120181601A1
Electricity

Methods for forming a memory cell having a top oxide spacer

#7 | 2012-01-10
US11432495
-

Flash memory device and method of forming the same with improved gate breakdown and endurance

#8 | 2011-11-17
US20110278660A1
Electricity

Oro and orpro with bit line trench to suppress transport program disturb

#9 | 2011-09-29
US20110233647A1
Electricity

Methods for forming a memory cell having a top oxide spacer

#10 | 2011-09-20
US11091519
-

Ultraviolet radiation blocking interlayer dielectric

#11 | 2010-10-21
US20100264480A1
Electricity

Use of a polymer spacer and Si trench in a bitline junction of a flash memory cell to improve TPD characteristics

#12 | 2010-09-16
US20100230743A1
Electricity

Self-aligned patterning method by using non-conformal film and etch for flash memory and other semiconductor applications

#13 | 2010-06-24
US20100155817A1
Electricity

HTO offset for long Leffective, better device performance

#14 | 2010-06-03
US20100133646A1
Electricity

Self-aligned SI rich nitride charge trap layer isolation for charge trap flash memory

#15 | 2010-04-22
US20100099249A1
Electricity

Selective silicide formation using resist etch back

#16 | 2010-04-13
US11412365
-

Methods for fabricating flash memory devices

#17 | 2009-11-24
US11411353
-

Selective contact formation using masking and resist patterning techniques

#18 | 2009-06-18
US20090152669A1
Electricity

SI trench between bitline HDP for BVDSS improvement

#19 | 2009-04-30
US20090111265A1
Electricity

Selective silicide formation using resist etchback

#20 | 2009-02-12
US20090042378A1
Electricity

Use of a polymer spacer and Si trench in a bitline junction of a flash memory cell to improve TPD characteristics

#21 | 2009-02-12
US20090039405A1
Electricity

ORO and ORPRO with bit line trench to suppress transport program disturb

#22 | 2008-10-30
US20080265301A1
Electricity

Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductor applications

#23 | 2008-04-24
US20080096357A1
Electricity

METHOD FOR MANUFACTURING A MEMORY DEVICE

#24 | 2008-03-13
US20080064165A1
Electricity

Dual storage node memory devices and methods for fabricating the same

#25 | 2006-06-27
US10819162
-

Flash memory device and method of forming the same with improved gate breakdown and endurance

#26 | 2005-12-13
US10032757
-

Method and system for forming dual gate structures in a nonvolatile memory using a protective layer

#27 | 2005-08-30
US10387774
-

Method for fabricating a memory device having reverse LDD

#28 | 2005-07-21
US20050158963A1
Electricity

Method of forming planarized shallow trench isolation

#29 | 2005-05-17
US10460278
-

Structure and method for preventing UV radiation damage in a memory cell and improving contact CD control

#30 | 2005-01-13
US20050006693A1
Electricity

Undoped oxide liner/BPSG for improved data retention

InventorID:

166399 ⎘