Inventor profile of:

David L. O'Meara

City:

Poughkeepsie, New York

Country:

United States

Published Applications:

16

Last publication date:

2013-04-04

Top Assignees for applications by David L. O'Meara

The entities that hold a legal rights for patent applications filed by inventor O'Meara David L.:

Recent patent applications by O'Meara David L.

David L. O'Meara from Poughkeepsie, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2013-04-04
US20130084688A1
Electricity

Multi-layer pattern for alternate ALD processes

#2 | 2011-10-06
US20110241128A1
Electricity

Multilayer sidewall spacer for seam protection of a patterned structure

#3 | 2011-10-06
US20110241085A1
Electricity

Dual sidewall spacer for seam protection of a patterned structure

#4 | 2007-04-05
US20070077701A1
Electricity

Method of forming a gate stack containing a gate dielectric layer having reduced metal content

#5 | 2007-03-22
US20070066084A1
Electricity

Method and system for forming a layer with controllable spstial variation

#6 | 2007-03-22
US20070065593A1
Electricity

Multi-source method and system for forming an oxide layer

#7 | 2006-10-12
US20060228902A1
Chemistry; metallurgy

Method and system for forming an oxynitride layer

#8 | 2006-07-27
US20060162861A1
Chemistry; metallurgy

Method and control system for treating a hafnium-based dielectric processing system

#9 | 2005-10-06
US20050217799A1
Electricity

Wafer heater assembly

#10 | 2005-09-29
US20050214445A1
Electricity

Method and processing system for determining coating status of a ceramic substrate heater

#11 | 2005-09-29
US20050211264A1
Electricity

Method and processing system for plasma-enhanced cleaning of system components

#12 | 2005-03-31
US20050070104A1
Electricity

Method and processing system for monitoring status of system components

#13 | 2005-03-31
US20050068519A1
Electricity

Method for monitoring status of system components

#14 | 2005-03-17
US20050059259A1
Electricity

Interfacial oxidation process for high-k gate dielectric process integration

#15 | 2005-02-03
US20050026459A1
Electricity

Method of forming uniform ultra-thin oxynitride layers

#16 | 2005-02-03
US20050026453A1
Electricity

Formation of ultra-thin oxide layers by self-limiting interfacial oxidation

InventorID:

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