Goleta, California
United States
76
2023-12-28
The entities that hold a legal rights for patent applications filed by inventor Parikh Primit:
Primit Parikh from Goleta, US has applied for patents for these inventions. The list has both pending applications and granted patents:
WIDE BANDGAP TRANSISTORS WITH GATE-SOURCE FIELD PLATES
#2 | 2023-09-28Module configurations for integrated III-nitride devices
#3 | 2021-12-16Module configurations for integrated III-Nitride devices
#4 | 2017-12-21Wide bandgap field effect transistors with source connected field plates
#5 | 2017-01-26Fabrication of single or multiple gate field plates
#6 | 2016-12-08Enhancement mode III-N HEMTs
#7 | 2016-03-10Enhancement mode III-N HEMTs
#8 | 2016-02-04High voltage GaN transistor
#9 | 2015-02-12III-N device structures and methods
#10 | 2014-12-25Method of forming electronic components with increased reliability
#11 | 2014-12-11Group III nitride based flip-chip integrated circuit and method for fabricating
#12 | 2014-12-11Enhancement mode III-N HEMTs
#13 | 2014-04-10III-N device structures and methods
#14 | 2014-04-03Method of forming electronic components with increased reliability
#15 | 2014-02-27Semiconductor heterostructure diodes
#16 | 2014-02-13Semiconductor electronic components and circuits
#17 | 2014-01-23DEVICES AND COMPONENTS FOR POWER CONVERSION CIRCUITS
#18 | 2013-12-26Methods of fabricating thick semi-insulating or insulating epitaxial gallium nitride layers
#19 | 2013-11-28Enhancement mode III-N HEMTs
#20 | 2013-06-06Compact electric appliance for providing gas for combustion
#21 | 2013-05-23Low voltage diode with reduced parasitic resistance and method for fabricating
#22 | 2013-04-11High power semiconductor electronic components with increased reliability
#23 | 2012-12-13Group III nitride based flip-chip integrated circuit and method for fabricating
#24 | 2012-10-25Semiconductor heterostructure diodes
#25 | 2012-09-06High voltage GaN transistor
#26 | 2012-08-02III-N device structures and methods
#27 | 2012-05-31Wide bandgap transistor devices with field plates
#28 | 2011-09-15Robust transistors with fluorine treatment
#29 | 2011-08-11Semiconductor electronic components and circuits
#30 | 2011-07-14Wide bandgap HEMTS with source connected field plates
#31 | 2011-06-02Semiconductor heterostructure diodes
#32 | 2011-05-19High voltage GaN transistors
#33 | 2011-03-17Group III nitride based flip-chip integrated circuit and method for fabricating
#34 | 2011-02-10Low voltage diode with reduced parasitic resistance and method for fabricating
#35 | 2011-01-27Fabrication of single or multiple gate field plates
#36 | 2010-07-29Heterojunction transistors having barrier layer bandgaps greater than channel layer bandgaps and related methods
#37 | 2010-06-10Semiconductor heterostructure diodes
#38 | 2010-05-06High voltage GaN transistors
#39 | 2010-02-18Robust transistors with fluorine treatment
#40 | 2009-12-24Insulting gate AlGaN/GaN HEMT
#41 | 2009-10-29Wide bandgap transistors with multiple field plates
#42 | 2009-10-29Enhancement mode III-N HEMTs
#43 | 2009-09-24Wide bandgap HEMTs with source connected field plates
#44 | 2009-09-10Wide bandgap transistor devices with field plates
#45 | 2009-06-11Compact electric appliance for providing gas for combustion
#46 | 2009-05-28Compact electric appliance providing hydrogen injection for improved performance of internal combustion engines
#47 | 2009-03-12III-nitride bidirectional switches
#48 | 2009-01-13Gallium nitride based diodes with low forward voltage and low reverse current operation
#49 | 2008-12-04Electrolysis transistor
#50 | 2008-07-24Low voltage diode with reduced parasitic resistance and method for fabricating
#51 | 2008-06-19Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
#52 | 2008-06-05Transistors and method for making ohmic contact to transistors
#53 | 2008-05-22High voltage GaN transistors
#54 | 2007-10-11High efficiency and/or high power density wide bandgap transistors
#55 | 2007-10-11Wide bandgap transistor devices with field plates
#56 | 2007-09-06Insulating gate AlGaN/GaN HEMTs
#57 | 2007-08-23Nitride based transistors for millimeter wave operation
#58 | 2007-06-12Insulating gate AlGaN/GaN HEMT
#59 | 2007-05-24Robust transistors with fluorine treatment
#60 | 2007-03-15Fabrication of single or multiple gate field plates
#61 | 2006-11-16Heterojunction transistors including energy barriers
#62 | 2006-10-12Devices having thick semi-insulating epitaxial gallium nitride layer
#63 | 2006-09-14Wide bandgap transistors with gate-source field plates
#64 | 2006-06-29Insulating gate AlGaN/GaN HEMT
#65 | 2006-06-08Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies
#66 | 2006-06-08High power density and/or linearity transistors
#67 | 2006-01-12Wide bandgap HEMTs with source connected field plates
#68 | 2006-01-12Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
#69 | 2005-11-17Wide bandgap transistors with multiple field plates
#70 | 2005-11-17Wide bandgap field effect transistors with source connected field plates
#71 | 2005-11-03Gallium nitride based diodes with low forward voltage and low reverse current operation
#72 | 2005-09-27Gallium nitride based diodes with low forward voltage and low reverse current operation
#73 | 2005-03-31Group III nitride based flip-chip integrated circuit and method for fabricating
#74 | 2005-03-10Cascode amplifier structures including wide bandgap field effect transistor with field plates
#75 | 2005-03-10Wide bandgap transistor devices with field plates
#76 | 2005-01-13Group III nitride based flip-chip integrated circuit and method for fabricating
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