Inventor profile of:

Michael Eugene Givens

City:

Scottsdale, Arizona

Country:

United States

Published Applications:

20

Last publication date:

2025-10-23

Top Assignees for applications by Michael Eugene Givens

The entities that hold a legal rights for patent applications filed by inventor Givens Michael Eugene:

Recent patent applications by Givens Michael Eugene

Michael Eugene Givens from Scottsdale, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-10-23
US20250327179A1
Chemistry; metallurgy

SYSTEMS, METHODS, AND STRUCTURES FOR THRESHOLD VOLTAGE CONTROL

#2 | 2025-09-04
US20250279287A1
Electricity

METAL OXIDE FILM AND METAL FILM LINER COMBINATION IN A SEMICONDUCTOR STRUCTURE, RELATED DEVICES, RELATED SYSTEMS, AND RELATED METHODS

#3 | 2025-09-04
US20250279275A1
Electricity

SELECTIVE PASSIVATION AND SELECTIVE DEPOSITION

#4 | 2025-08-28
US20250273558A1
Electricity

METHODS FOR FORMING ASYMMETRICAL DIPOLES FOR CAPACITORS, RELATED DEVICES, AND RELATED SYSTEMS

#5 | 2025-08-14
US20250257455A1
Chemistry; metallurgy

REMOTE DOPING OF A SEMICONDUCTOR STRUCTURE, RELATED DEVICES, RELATED SYSTEMS, AND RELATED METHODS

#6 | 2024-03-21
US20240096711A1
Electricity

METHOD FOR FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND RELATED SEMICONDUCTOR DEVICE STRUCTURES

#7 | 2020-10-29
US20200343358A1
Electricity

Methods for forming a semiconductor device structure and related semiconductor device structures

#8 | 2020-07-16
US20200227325A1
Electricity

METHOD FOR FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND RELATED SEMICONDUCTOR DEVICE STRUCTURES

#9 | 2020-05-21
US20200161438A1
Electricity

Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures

#10 | 2019-12-12
US20190378916A1
Electricity

Method of forming a germanium oxynitride film

#11 | 2019-05-30
US20190164763A1
Electricity

Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures

#12 | 2019-03-21
US20190088555A1
Electricity

Method for forming a semiconductor device structure comprising a gate fill metal

#13 | 2019-01-24
US20190027573A1
Electricity

Methods for forming a semiconductor device structure and related semiconductor device structures

#14 | 2018-10-25
US20180308686A1
Electricity

Source/drain performance through conformal solid state doping

#15 | 2018-05-03
US20180122642A1
Electricity

Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures

#16 | 2017-11-02
US20170317194A1
Electricity

Method of forming a germanium oxynitride film

#17 | 2017-11-02
US20170316933A1
Electricity

Source/drain performance through conformal solid state doping

#18 | 2017-10-26
US20170306479A1
Chemistry; metallurgy

Deposition of metal borides and silicides

#19 | 2017-10-26
US20170306478A1
Chemistry; metallurgy

Deposition of metal borides

#20 | 2017-04-20
US20170110313A1
Electricity

IMPLEMENTING ATOMIC LAYER DEPOSITION FOR GATE DIELECTRICS

InventorID:

1854792 ⎘