Inventor profile of:

Jixin Yu

City:

Milpitas, California

Country:

United States

Published Applications:

30

Last publication date:

2024-12-12

Top Assignees for applications by Jixin Yu

The entities that hold a legal rights for patent applications filed by inventor Yu Jixin:

Recent patent applications by Yu Jixin

Jixin Yu from Milpitas, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-12-12
US20240414917A1
Electricity

MEMORY DEVICE INCLUDING WORD LINE CONTACT STRIPS AND METHODS OF FORMING THE SAME

#2 | 2024-11-21
US20240386959A1
Physics

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING TRENCH BRIDGE STRUCTURES HAVING DIFFERENT VOLUMES AND METHODS OF FORMING THE SAME

#3 | 2024-10-03
US20240334695A1
Electricity

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING COMPOSITE DIELECTRIC ISOLATION STRUCTURE IN A STAIRCASE REGION AND METHODS OF FORMING THE SAME

#4 | 2024-08-29
US20240290714A1
Electricity

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MULTI-LEVEL WORD LINE CONTACT WELLS AND METHODS FOR MANUFACTURING THE SAME

#5 | 2024-07-25
US20240251551A1
Electricity

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING EXPANDED SUPPORT OPENINGS AND DOUBLE SPACER WORD LINE CONTACT FORMATION

#6 | 2024-07-25
US20240250023A1
Electricity

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING EXPANDED SUPPORT OPENINGS AND DOUBLE SPACER WORD LINE CONTACT FORMATION

#7 | 2022-11-03
US20220352091A1
Electricity

Three-dimensional memory device with finned support pillar structures and method of forming the same

#8 | 2022-06-09
US20220181348A1
Electricity

Three-dimensional memory device including backside trench support structures and methods of forming the same

#9 | 2021-01-28
US20210028111A1
Electricity

Three-dimensional memory device including self-aligned dielectric isolation regions for connection via structures and method of making the same

#10 | 2020-10-01
US20200312865A1
Electricity

Three-dimensional memory device containing asymmetric, different size support pillars and method for making the same

#11 | 2020-10-01
US20200312765A1
Electricity

Memory die containing stress reducing backside contact via structures and method of making the same

#12 | 2020-09-17
US20200295029A1
Electricity

Three-dimensional memory device having bonding structures connected to bit lines and methods of making the same

#13 | 2020-05-19
US16367455
Electricity

Memory die having wafer warpage reduction through stress balancing employing rotated three-dimensional memory arrays and method of making the same

#14 | 2020-02-27
US20200066745A1
Electricity

Three-dimensional memory device having bonding structures connected to bit lines and methods of making the same

#15 | 2018-09-13
US20180261671A1
Electricity

Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device

#16 | 2018-07-12
US20180197876A1
Electricity

Three-dimensional memory device with enhanced mechanical stability semiconductor pedestal and method of making thereof

#17 | 2018-05-03
US20180122906A1
Electricity

Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device

#18 | 2018-05-03
US20180122905A1
Electricity

Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device

#19 | 2018-05-03
US20180122904A1
Electricity

Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device

#20 | 2017-12-14
US20170358594A1
Electricity

Method of forming a staircase in a semiconductor device using a linear alignment control feature

#21 | 2017-12-14
US20170358593A1
Electricity

Within-array through-memory-level via structures and method of making thereof

#22 | 2017-12-07
US20170352678A1
Electricity

Through-memory-level via structures between staircase regions in a three-dimensional memory device and method of making thereof

#23 | 2017-08-24
US20170243879A1
Electricity

Three dimensional memory device containing discrete silicon nitride charge storage regions

#24 | 2017-08-17
US20170236896A1
Electricity

Self-aligned isolation dielectric structures for a three-dimensional memory device

#25 | 2017-08-17
US20170236746A1
Electricity

Multi-tier memory device with through-stack peripheral contact via structures and method of making thereof

#26 | 2017-08-10
US20170229472A1
Electricity

Multi-tier replacement memory stack structure integration scheme

#27 | 2017-06-22
US20170179154A1
Electricity

Through-memory-level via structures for a three-dimensional memory device

#28 | 2017-06-22
US20170179151A1
Electricity

Through-memory-level via structures for a three-dimensional memory device

#29 | 2017-06-22
US20170179026A1
Electricity

Through-memory-level via structures for a three-dimensional memory device

#30 | 2017-06-06
US15043761
Electricity

Three dimensional memory device with peripheral devices under dummy dielectric layer stack and method of making thereof

InventorID:

1912366 ⎘