Inventor profile of:

Anthony Dip

City:

Cedar Creek, Texas

Country:

United States

Published Applications:

40

Last publication date:

2025-03-20

Top Assignees for applications by Anthony Dip

The entities that hold a legal rights for patent applications filed by inventor Dip Anthony:

Recent patent applications by Dip Anthony

Anthony Dip from Cedar Creek, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-03-20
US20250092521A1
Chemistry; metallurgy

SHOWERHEAD FOR PROCESS TOOL

#2 | 2022-03-31
US20220098733A1
Chemistry; metallurgy

Multiple zone gas injection for control of gas phase radicals

#3 | 2021-12-30
US20210404064A1
Chemistry; metallurgy

Showerhead for process tool

#4 | 2021-12-23
US20210395886A1
Chemistry; metallurgy

Spatial atomic layer deposition

#5 | 2021-12-23
US20210395883A1
Chemistry; metallurgy

System and Method for Thermally Cracking Ammonia

#6 | 2019-11-28
US20190360095A1
Chemistry; metallurgy

Multiple zone gas injection for control of gas phase radicals

#7 | 2017-08-17
US20170236719A1
Electricity

Method and apparatus for multi-film deposition and etching in a batch processing system

#8 | 2012-01-05
US20120003825A1
Electricity

Method of forming strained epitaxial carbon-doped silicon films

#9 | 2011-10-06
US20110241128A1
Electricity

Multilayer sidewall spacer for seam protection of a patterned structure

#10 | 2011-10-06
US20110241085A1
Electricity

Dual sidewall spacer for seam protection of a patterned structure

#11 | 2011-08-09
US12894513
-

Low-temperature dielectric film formation by chemical vapor deposition

#12 | 2009-10-01
US20090246971A1
Electricity

In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition

#13 | 2009-04-02
US20090088000A1
Electricity

Method for growing an oxynitride film on a substrate

#14 | 2009-02-05
US20090035463A1
Electricity

THERMAL PROCESSING SYSTEM AND METHOD FOR FORMING AN OXIDE LAYER ON SUBSTRATES

#15 | 2008-10-02
US20080242109A1
Electricity

Method for growing a thin oxynitride film on a substrate

#16 | 2008-08-14
US20080193643A1
Chemistry; metallurgy

Atomic layer deposition systems and methods

#17 | 2008-07-17
US20080169534A1
Electricity

Reduced defect silicon or silicon germanium deposition in micro-features

#18 | 2008-02-14
US20080035055A1
Electricity

Thermal processing system with improved process gas flow and method for injecting a process gas into a thermal processing system

#19 | 2007-11-08
US20070259534A1
Chemistry; metallurgy

In-situ formation of oxidized aluminum nitride films

#20 | 2007-10-11
US20070238313A1
Electricity

Method for replacing a nitrous oxide based oxidation process with a nitric oxide based oxidation process for substrate processing

#21 | 2007-10-11
US20070238302A1
Electricity

Sequential oxide removal using fluorine and hydrogen

#22 | 2007-10-04
US20070231757A1
Electricity

Thermal processing furnace, gas delivery system therefor, and methods for delivering a process gas thereto

#23 | 2007-03-01
US20070048956A1
Chemistry; metallurgy

Interrupted deposition process for selective deposition of Si-containing films

#24 | 2007-02-22
US20070042570A1
Electricity

Sequential deposition process for forming Si-containing films

#25 | 2007-02-22
US20070042569A1
Electricity

Low temperature formation of patterned epitaxial Si containing films

#26 | 2007-02-22
US20070039924A1
Chemistry; metallurgy

Low-temperature oxide removal using fluorine

#27 | 2007-02-15
US20070037412A1
Electricity

IN-SITU ATOMIC LAYER DEPOSITION

#28 | 2007-01-16
US11217230
-

Built-in self test for a thermal processing system

#29 | 2006-10-12
US20060228900A1
Electricity

Method and system for removing an oxide from a substrate

#30 | 2006-07-20
US20060160288A1
Electricity

Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor

#31 | 2006-04-04
US10233483
-

Semiconductor wafer susceptor

#32 | 2005-10-06
US20050221001A1
Chemistry; metallurgy

Method for extending time between chamber cleaning processes

#33 | 2005-10-06
US20050217799A1
Electricity

Wafer heater assembly

#34 | 2005-09-15
US20050199877A1
Electricity

Silicon germanium surface layer for high-k dielectric integration

#35 | 2005-09-15
US20050199872A1
Electricity

Silicon-germanium thin layer semiconductor structure with variable silicon-germanium composition and method of fabrication

#36 | 2005-03-31
US20050066892A1
Chemistry; metallurgy

Deposition of silicon-containing films from hexachlorodisilane

#37 | 2005-03-22
US10767470
-

Method of oxidizing work pieces and oxidation system

#38 | 2005-03-03
US20050048742A1
Electricity

Multiple grow-etch cyclic surface treatment for substrate preparation

#39 | 2005-02-03
US20050026459A1
Electricity

Method of forming uniform ultra-thin oxynitride layers

#40 | 2005-02-03
US20050026453A1
Electricity

Formation of ultra-thin oxide layers by self-limiting interfacial oxidation

InventorID:

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