Inventor profile of:

Robert Seidel

City:

Dresden

Country:

Germany

Published Applications:

33

Last publication date:

2019-07-25

Top Assignees for applications by Robert Seidel

The entities that hold a legal rights for patent applications filed by inventor Seidel Robert:

Recent patent applications by Seidel Robert

Robert Seidel from Dresden, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2019-07-25
US20190229063A1
Electricity

Semiconductor structure with substantially straight contact profile

#2 | 2019-05-23
US20190157213A1
Electricity

SEMICONDUCTOR STRUCTURE WITH SUBSTANTIALLY STRAIGHT CONTACT PROFILE

#3 | 2017-01-05
US20170005159A1
Electricity

Embedded metal-insulator-metal capacitor

#4 | 2016-04-07
US20160099302A1
Electricity

Method of forming an embedded metal-insulator-metal (MIM) capacitor

#5 | 2014-09-18
US20140264758A1
Electricity

Methods of forming a protection layer to protect a metal hard mask layer during lithography reworking processes

#6 | 2013-04-18
US20130095648A1
Electricity

TECHNIQUE FOR REDUCING TOPOGRAPHY-RELATED IRREGULARITIES DURING THE PATTERNING OF A DIELECTRIC MATERIAL IN A CONTACT LEVEL OF CLOSELY SPACED TRANSISTORS

#7 | 2012-08-30
US20120220119A1
Electricity

Semiconductor device and method for patterning vertical contacts and metal lines in a common etch process

#8 | 2011-09-01
US20110212616A1
Electricity

Metallization system of a semiconductor device comprising rounded interconnects formed by hard mask rounding

#9 | 2011-09-01
US20110210447A1
Electricity

Contact elements of semiconductor devices comprising a continuous transition to metal lines of a metallization layer

#10 | 2011-06-30
US20110156270A1
Electricity

Contact elements of semiconductor devices formed on the basis of a partially applied activation layer

#11 | 2011-05-19
US20110117723A1
Performing operations; transporting

Nano imprint technique with increased flexibility with respect to alignment and feature shaping

#12 | 2010-12-02
US20100301489A1
Electricity

Microstructure device including a metallization structure with self-aligned air gaps formed based on a sacrificial material

#13 | 2010-11-11
US20100285668A1
Electricity

Technique for compensating for a difference in deposition behavior in an interlayer dielectric material

#14 | 2010-09-02
US20100219534A1
Electricity

Microstructure device including a metallization structure with self-aligned air gaps and refilled air gap exclusion zones

#15 | 2010-06-03
US20100133648A1
Electricity

Microstructure device including a metallization structure with self-aligned air gaps between closely spaced metal lines

#16 | 2010-03-04
US20100052175A1
Electricity

REDUCING LEAKAGE AND DIELECTRIC BREAKDOWN IN DIELECTRIC MATERIALS OF METALLIZATION SYSTEMS OF SEMICONDUCTOR DEVICES BY FORMING RECESSES

#17 | 2010-03-04
US20100052110A1
Electricity

Semiconductor device comprising a carbon-based material for through hole vias

#18 | 2009-11-05
US20090275200A1
Electricity

Technique for reducing topography-related irregularities during the patterning of a dielectric material in a contact level of closely spaced transistors

#19 | 2009-10-01
US20090243109A1
Electricity

Metal cap layer of increased electrode potential for copper-based metal regions in semiconductor devices

#20 | 2009-08-27
US20090213830A1
Electricity

Electrical circuit with a nanostructure and method for producing a contact connection of a nanostructure

#21 | 2009-07-16
US20090181537A1
Electricity

SEMICONDUCTOR STRUCTURE COMPRISING AN ELECTRICAL CONNECTION AND METHOD OF FORMING THE SAME

#22 | 2009-04-30
US20090108466A1
Electricity

Semiconductor device and method for patterning vertical contacts and metal lines in a common etch process

#23 | 2009-04-02
US20090087999A1
Electricity

Technique for compensating for a difference in deposition behavior in an interlayer dielectric material

#24 | 2008-12-04
US20080296559A1
Electricity

Method for fabricating a nanoelement field effect transistor with surrounded gate structure

#25 | 2008-12-04
US20080296557A1
Electricity

Semiconductor power switch having nanowires

#26 | 2008-10-30
US20080265426A1
Electricity

SEMICONDUCTOR STRUCTURE COMPRISING AN ELECTRICAL CONNECTION AND METHOD OF FORMING THE SAME

#27 | 2008-08-28
US20080206994A1
Electricity

Method of reducing non-uniformities during chemical mechanical polishing of excess metal in a metallization level of microstructure devices

#28 | 2008-07-31
US20080182409A1
Electricity

METHOD OF FORMING A METAL LAYER OVER A PATTERNED DIELECTRIC BY ELECTROLESS DEPOSITION USING A SELECTIVELY PROVIDED ACTIVATION LAYER

#29 | 2008-07-31
US20080182406A1
Electricity

Method of forming a copper-based metallization layer including a conductive cap layer by an advanced integration regime

#30 | 2008-01-03
US20080003826A1
Electricity

METHOD FOR INCREASING THE PLANARITY OF A SURFACE TOPOGRAPHY IN A MICROSTRUCTURE

#31 | 2008-01-03
US20080003818A1
Performing operations; transporting

Nano imprint technique with increased flexibility with respect to alignment and feature shaping

#32 | 2006-11-23
US20060261419A1
Electricity

Method for fabricating a nanoelement field effect transistor with surrounded gate structure

#33 | 2006-10-19
US20060234080A1
Electricity

Integrated electronic component

InventorID:

197995 ⎘