Dresden
Germany
33
2019-07-25
The entities that hold a legal rights for patent applications filed by inventor Seidel Robert:
Robert Seidel from Dresden, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
Semiconductor structure with substantially straight contact profile
#2 | 2019-05-23SEMICONDUCTOR STRUCTURE WITH SUBSTANTIALLY STRAIGHT CONTACT PROFILE
#3 | 2017-01-05Embedded metal-insulator-metal capacitor
#4 | 2016-04-07Method of forming an embedded metal-insulator-metal (MIM) capacitor
#5 | 2014-09-18Methods of forming a protection layer to protect a metal hard mask layer during lithography reworking processes
#6 | 2013-04-18TECHNIQUE FOR REDUCING TOPOGRAPHY-RELATED IRREGULARITIES DURING THE PATTERNING OF A DIELECTRIC MATERIAL IN A CONTACT LEVEL OF CLOSELY SPACED TRANSISTORS
#7 | 2012-08-30Semiconductor device and method for patterning vertical contacts and metal lines in a common etch process
#8 | 2011-09-01Metallization system of a semiconductor device comprising rounded interconnects formed by hard mask rounding
#9 | 2011-09-01Contact elements of semiconductor devices comprising a continuous transition to metal lines of a metallization layer
#10 | 2011-06-30Contact elements of semiconductor devices formed on the basis of a partially applied activation layer
#11 | 2011-05-19Nano imprint technique with increased flexibility with respect to alignment and feature shaping
#12 | 2010-12-02Microstructure device including a metallization structure with self-aligned air gaps formed based on a sacrificial material
#13 | 2010-11-11Technique for compensating for a difference in deposition behavior in an interlayer dielectric material
#14 | 2010-09-02Microstructure device including a metallization structure with self-aligned air gaps and refilled air gap exclusion zones
#15 | 2010-06-03Microstructure device including a metallization structure with self-aligned air gaps between closely spaced metal lines
#16 | 2010-03-04REDUCING LEAKAGE AND DIELECTRIC BREAKDOWN IN DIELECTRIC MATERIALS OF METALLIZATION SYSTEMS OF SEMICONDUCTOR DEVICES BY FORMING RECESSES
#17 | 2010-03-04Semiconductor device comprising a carbon-based material for through hole vias
#18 | 2009-11-05Technique for reducing topography-related irregularities during the patterning of a dielectric material in a contact level of closely spaced transistors
#19 | 2009-10-01Metal cap layer of increased electrode potential for copper-based metal regions in semiconductor devices
#20 | 2009-08-27Electrical circuit with a nanostructure and method for producing a contact connection of a nanostructure
#21 | 2009-07-16SEMICONDUCTOR STRUCTURE COMPRISING AN ELECTRICAL CONNECTION AND METHOD OF FORMING THE SAME
#22 | 2009-04-30Semiconductor device and method for patterning vertical contacts and metal lines in a common etch process
#23 | 2009-04-02Technique for compensating for a difference in deposition behavior in an interlayer dielectric material
#24 | 2008-12-04Method for fabricating a nanoelement field effect transistor with surrounded gate structure
#25 | 2008-12-04Semiconductor power switch having nanowires
#26 | 2008-10-30SEMICONDUCTOR STRUCTURE COMPRISING AN ELECTRICAL CONNECTION AND METHOD OF FORMING THE SAME
#27 | 2008-08-28Method of reducing non-uniformities during chemical mechanical polishing of excess metal in a metallization level of microstructure devices
#28 | 2008-07-31METHOD OF FORMING A METAL LAYER OVER A PATTERNED DIELECTRIC BY ELECTROLESS DEPOSITION USING A SELECTIVELY PROVIDED ACTIVATION LAYER
#29 | 2008-07-31Method of forming a copper-based metallization layer including a conductive cap layer by an advanced integration regime
#30 | 2008-01-03METHOD FOR INCREASING THE PLANARITY OF A SURFACE TOPOGRAPHY IN A MICROSTRUCTURE
#31 | 2008-01-03Nano imprint technique with increased flexibility with respect to alignment and feature shaping
#32 | 2006-11-23Method for fabricating a nanoelement field effect transistor with surrounded gate structure
#33 | 2006-10-19Integrated electronic component
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