Daniel J. Hoffman

Physical vapor deposition with isotropic neutral and non-isotropic ion velocity distribution at the wafer surface

Physical vapor deposition system with a source of isotropic ion velocity distribution at the wafer surface

CAPACITIVELY COUPLED PLASMA REACTOR WITH MAGNETIC PLASMA CONTROL

Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor

Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control

Method of processing a workpiece in a plasma reactor using feed forward thermal control

Substrate support having fluid channel

CAPACITIVLEY COUPLED PLASMA REACTOR HAVING A COOLED/HEATED WAFER SUPPORT WITH UNIFORM TEMPERATURE DISTRIBUTION

Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes

Ionized Physical Vapor Deposition for Microstructure Controlled Thin Film Deposition

Ionized Physical Vapor Deposition for Microstructure Controlled Thin Film Deposition

Plasma reactor with a multiple zone thermal control feed forward control apparatus

Capacitively coupled plasma reactor having very agile wafer temperature control

Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor

MODULATION OF RF RETURNING STRAPS FOR UNIFORMITY CONTROL

Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target

CONTROL OF EROSION PROFILE ON A DIELECTRIC RF SPUTTER TARGET

High density plasma gapfill deposition-etch-deposition process etchant

Method for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning

Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning

Cathode with inner and outer electrodes at different heights

Method of plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator

PLASMA REACTOR WITH HIGH SPEED PLASMA IMPEDANCE TUNING BY MODULATION OF SOURCE POWER OR BIAS POWER

Method of plasma load impedance tuning by modulation of an unmatched low power RF generator

Plasma reactor with high speed plasma load impedance tuning by modulation of different unmatched frequency sources

Method of plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator

METHOD OF PLASMA LOAD IMPEDANCE TUNING BY MODULATION OF A SOURCE POWER OR BIAS POWER RF GENERATOR

Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator

Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator

Method of controlling plasma distribution uniformity by time-weighted superposition of different solenoid fields

Method of controlling plasma distribution uniformity by superposition of different constant solenoid fields

Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface

Methods and apparatus for controlling characteristics of a plasma

METHOD FOR DETERMINING PLASMA CHARACTERISTICS

Method for monitoring process drift using plasma characteristics

Annular baffle

Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor

Substrate cleaning chamber and cleaning and conditioning methods

Gas flow diffuser

Plasma Immersion Chamber

Method of plasma confinement for enhancing magnetic control of plasma radial distribution

PLASMA CONFINEMENT BAFFLE AND FLOW EQUALIZER FOR ENHANCED MAGNETIC CONTROL OF PLASMA RADIAL DISTRIBUTION

Apparatus and method to confine plasma and reduce flow resistance in a plasma

Matching network characterization using variable impedance analysis

Capacitively coupled plasma reactor with magnetic plasma control

Method for determining plasma characteristics

Method for determining plasma characteristics

Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones

Plasma etch process using polymerizing etch gases and an inert diluent gas in independent gas injection zones to improve etch profile or etch rate uniformity

Method of operating a plasma reactor having an overhead electrode with a fixed impedance match element

Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation

Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content

Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone

Method for determining plasma characteristics

Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power

Substrate support having heat transfer system

Method of feedback control of ESC voltage using wafer voltage measurement at the bias supply output

Method for shaping a magnetic field in a magnetic field-enhanced plasma reactor

Substrate support having heat transfer system

Method for shaping a magnetic field in a magnetic field-enhanced plasma reactor

Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor

Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters

Method of processing a workpiece in a plasma reactor using feed forward thermal control

Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control

Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes

Plasma reactor with wafer backside thermal loop, two-phase internal pedestal thermal loop and a control processor governing both loops

Method for agile workpiece temperature control in a plasma reactor using a thermal model

Plasma reactor with a multiple zone thermal control feed forward control apparatus

Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor

Method of operating a capacitively coupled plasma reactor with dual temperature control loops

Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution

Capacitively coupled plasma reactor having very agile wafer temperature control

Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters

Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure

Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters

Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure

Methods to avoid unstable plasma states during a process transition

Method to reduce plasma-induced charging damage

Method of processing a workpiece by controlling a set of plasma parameters through a set of chamber parameters using surfaces of constant value

MULTI-FREQUENCY PLASMA ENHANCED PROCESS CHAMBER HAVING A TOROIDAL PLASMA SOURCE

PLASMA CONTROL USING DUAL CATHODE FREQUENCY MIXING

Method of operating a plasma reactor chamber with respect to two plasma parameters selected from a group comprising ion density, wafer voltage, etch rate and wafer current, by controlling chamber parameters of source power and bias power

Method of controlling chamber parameters of a plasma reactor in accordance with desired values of plural plasma parameters, by translating desired values for the plural plasma parameters to control values for each of the chamber parameters

Method of determining wafer voltage in a plasma reactor from applied bias voltage and current and a pair of constants

Method of determining plasma ion density, wafer voltage, etch rate and wafer current from applied bias voltage and current

Plasma generation and control using dual frequency RF signals

Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output

MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression

Capacitively coupled plasma reactor with magnetic plasma control

Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression

Gasless high voltage high contact force wafer contact-cooling electrostatic chuck

Multi-frequency plasma enhanced process chamber having a torroidal plasma source

MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression

Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface

Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction

Capacitively coupled plasma reactor with uniform radial distribution of plasma

Plasma chamber having multiple RF source frequencies

Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression

Plasma control using dual cathode frequency mixing

Method and apparatus for routing harmonics in a plasma to ground within a plasma enhanced semiconductor wafer processing chamber