Campbell, California
United States
21
2019-04-18
The entities that hold a legal rights for patent applications filed by inventor Ho Moses:
Moses Ho from Campbell, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Nano-tube MOSFET technology and devices
#2 | 2018-08-23Nano-tube MOSFET technology and devices
#3 | 2017-05-04MANUFACTURING METHODS FOR ACCURATELY ALIGNED AND SELF-BALANCED SUPERJUNCTION DEVICES
#4 | 2016-11-03NANO-TUBE MOSFET TECHNOLOGY AND DEVICES
#5 | 2015-12-10Manufacturing methods for accurately aligned and self-balanced superjunction devices
#6 | 2014-12-25Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
#7 | 2013-12-26Method of forming a self-aligned charge balanced power DMOS
#8 | 2013-08-29Nano-tube MOSFET technology and devices
#9 | 2013-03-28Manufacturing methods for accurately aligned and self-balanced superjunction devices
#10 | 2013-01-10Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
#11 | 2011-07-28Nano-tube MOSFET technology and devices
#12 | 2011-06-23Method of forming a self-aligned charge balanced power DMOS
#13 | 2011-06-16Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
#14 | 2011-02-22Method for making a charge balanced multi-nano shell drift region for superjunction semiconductor device
#15 | 2010-07-01Nano-tube MOSFET technology and devices
#16 | 2010-04-29Shallow source MOSFET
#17 | 2009-10-15Structure for measuring body pinch resistance of high density trench MOSFET array
#18 | 2008-12-18Methods of achieving linear capacitance in symmetrical and asymmetrical EMI filters with TVS
#19 | 2008-10-30Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
#20 | 2008-04-17Shallow source MOSFET
#21 | 2006-04-06Shallow source MOSFET
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