Assignee profile:

Alpha & Omega Semiconductor, Ltd.

City:

Country:

Bermuda

Published Applications:

41

Last publication date:

2012-05-24

Patent Grants:

41

Last grant date:

2012-08-07

Top Inventors for applications by Alpha & Omega Semiconductor, Ltd.

These are the the leading inventors for applications assigned to Alpha & Omega Semiconductor, Ltd.:

  • Yu Wang 2 Fremont, CA United States
  • Ji Pan 2 Santa Clara, CA United States
  • Ming Sun 2 Sunnyvale, CA United States
  • Moses Ho 2 Campbell, CA United States

Recent patent applications by Alpha & Omega Semiconductor, Ltd.

Alpha & Omega Semiconductor, Ltd. based in , BM has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2012-05-24 ✅ Patent 8,236,653 granted on 2012-08-07
US20120129306A1
Electricity

Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regions

#2 | 2011-06-16 ✅ Patent 8,124,453 granted on 2012-02-28
US20110143499A1
Electricity

Vertically packaged MOSFET and IC power devices as integrated module using 3D interconnected laminates

#3 | 2011-05-26 ✅ Patent 8,105,905 granted on 2012-01-31
US20110124167A1
Electricity

Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regions

#4 | 2010-04-22 ✅ Patent 8,053,315 granted on 2011-11-08
US20100099230A1
Electricity

Method to manufacture split gate with high density plasma oxide layer as inter-polysilicon insulation layer

#5 | 2010-02-25 ✅ Patent 7,790,549 granted on 2010-09-07
US20100044791A1
Electricity

Configurations and methods for manufacturing charge balanced devices

#6 | 2010-02-11 ✅ Patent 8,067,288 granted on 2011-11-29
US20100035397A1
Electricity

Configuration and method of manufacturing the one-time programmable (OTP) memory cells

#7 | 2009-11-19 ✅ Patent 7,919,817 granted on 2011-04-05
US20090283831A1
Electricity

Electrostatic discharge (ESD) protection applying high voltage lightly doped drain (LDD) CMOS technologies

#8 | 2009-10-22 ✅ Patent 7,851,286 granted on 2010-12-14
US20090263947A1
Electricity

Bottom source LDMOSFET method

#9 | 2009-10-22 ✅ Patent 8,120,142 granted on 2012-02-21
US20090261897A1
Electricity

Applying trenched transient voltage suppressor (TVS) technology for distributed low pass filters

#10 | 2009-10-22 ✅ Patent 8,000,124 granted on 2011-08-16
US20090261883A1
Electricity

Symmetric blocking transient voltage suppressor (TVS) using bipolar transistor base snatch

#11 | 2009-09-03 ✅ Patent 8,008,747 granted on 2011-08-30
US20090218620A1
Electricity

High power and high temperature semiconductor power devices protected by non-uniform ballasted sources

#12 | 2009-06-11 ✅ Patent 7,932,148 granted on 2011-04-26
US20090148995A1
Electricity

Processes for manufacturing MOSFET devices with excessive round-hole shielded gate trench (SGT)

#13 | 2009-01-22 ✅ Patent 7,633,135 granted on 2009-12-15
US20090020843A1
Electricity

Bottom anode Schottky diode structure and method

#14 | 2008-12-18 ✅ Patent 7,795,987 granted on 2010-09-14
US20080310066A1
Electricity

Methods of achieving linear capacitance in symmetrical and asymmetrical EMI filters with TVS

#15 | 2008-12-18 ✅ Patent 7,863,995 granted on 2011-01-04
US20080310065A1
Electricity

Methods of achieving linear capacitance in symmetrical and asymmetrical EMI filters with TVS

#16 | 2008-12-18 ✅ Patent 7,764,105 granted on 2010-07-27
US20080309382A1
Electricity

MOSFET for synchronous rectification

#17 | 2008-11-27 ✅ Patent 8,053,808 granted on 2011-11-08
US20080290367A1
Electricity

Layouts for multiple-stage ESD protection circuits for integrating with semiconductor power device

#18 | 2008-10-30 ✅ Patent 7,952,139 granted on 2011-05-31
US20080265312A1
Electricity

Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout

#19 | 2008-10-30 ✅ Patent 8,035,159 granted on 2011-10-11
US20080265289A1
Electricity

Device structure and manufacturing method using HDP deposited source-body implant block

#20 | 2008-10-02 ✅ Patent 7,824,977 granted on 2010-11-02
US20080237777A1
Electricity

Completely decoupled high voltage and low voltage transistor manufacturing processes

#21 | 2008-09-11 ✅ Patent 8,120,887 granted on 2012-02-21
US20080218922A1
Electricity

MOS transistor triggered transient voltage suppressor to provide circuit protection at a lower voltage

#22 | 2008-08-21 ✅ Patent 8,089,139 granted on 2012-01-03
US20080197458A1
Electricity

Small outline package in which MOSFET and Schottky diode being co-packaged

#23 | 2008-08-07 ✅ Patent 7,755,379 granted on 2010-07-13
US20080186048A1
Physics

Configurations and method for carrying out wafer level unclamped inductive switching (UIS) tests

#24 | 2008-07-31 ✅ Patent 7,999,363 granted on 2011-08-16
US20080180871A1
Electricity

Structure and method for self protection of power device

#25 | 2008-07-31 ✅ Patent 8,058,687 granted on 2011-11-15
US20080179668A1
Electricity

Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET

#26 | 2008-07-24 ✅ Patent 7,670,908 granted on 2010-03-02
US20080173969A1
Electricity

Configuration of high-voltage semiconductor power device to achieve three dimensional charge coupling

#27 | 2008-07-24 ✅ Patent 7,863,675 granted on 2011-01-04
US20080173956A1
Electricity

MOSFET using gate work function engineering for switching applications

#28 | 2008-05-29 ✅ Patent 7,781,826 granted on 2010-08-24
US20080121988A1
Electricity

Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter

#29 | 2008-04-03 ✅ Patent 7,554,839 granted on 2009-06-30
US20080079035A1
Electricity

Symmetric blocking transient voltage suppressor (TVS) using bipolar transistor base snatch

#30 | 2008-03-20 ✅ Patent 8,008,716 granted on 2011-08-30
US20080067584A1
Electricity

Inverted-trench grounded-source FET structure with trenched source body short electrode

#31 | 2008-03-13 ✅ Patent 7,602,029 granted on 2009-10-13
US20080061347A1
Electricity

Configuration and method of manufacturing the one-time programmable (OTP) memory cells

#32 | 2008-02-07 ✅ Patent 8,110,869 granted on 2012-02-07
US20080029812A1
Electricity

Planar SRFET using no additional masks and layout method

#33 | 2008-01-31 ✅ Patent 7,554,154 granted on 2009-06-30
US20080023785A1
Electricity

Bottom source LDMOSFET structure and method

#34 | 2008-01-03 ✅ Patent 7,443,225 granted on 2008-10-28
US20080001646A1
Electricity

Thermally stable semiconductor power device

#35 | 2007-12-27 ✅ Patent 7,956,384 granted on 2011-06-07
US20070295996A1
Electricity

Closed cell configuration to increase channel density for sub-micron planar semiconductor power device

#36 | 2007-08-23 ✅ Patent 7,633,119 granted on 2009-12-15
US20070194374A1
Electricity

Shielded gate trench (SGT) MOSFET devices and manufacturing processes

#37 | 2007-07-26 ✅ Patent 7,829,941 granted on 2010-11-09
US20070170498A1
Electricity

Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regions

#38 | 2007-04-05 ✅ Patent 7,671,439 granted on 2010-03-02
US20070075392A1
Electricity

Junction barrier Schottky (JBS) with floating islands

#39 | 2007-03-29 ✅ Patent 7,880,223 granted on 2011-02-01
US20070073807A1
Electricity

Latch-up free vertical TVS diode array structure using trench isolation

#40 | 2007-03-29 ✅ Patent 7,805,687 granted on 2010-09-28
US20070069297A1
Physics

One-time programmable (OTP) memory cell

#41 | 2007-02-15 ✅ Patent 7,737,522 granted on 2010-06-15
US20070034901A1
Electricity

Trench junction barrier controlled Schottky device with top and bottom doped regions for enhancing forward current in a vertical direction

AssigneeID:

410059 ⎘