Inventor profile of:

Elke Erben

City:

Dresden

Country:

Germany

Published Applications:

14

Last publication date:

2018-06-07

Top Assignees for applications by Elke Erben

The entities that hold a legal rights for patent applications filed by inventor Erben Elke:

Recent patent applications by Erben Elke

Elke Erben from Dresden, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2018-06-07
US20180158835A1
Electricity

Logic and flash field-effect transistors

#2 | 2015-06-25
US20150179740A1
Electricity

TRANSISTOR DEVICE WITH STRAINED LAYER

#3 | 2015-06-11
US20150162414A1
Electricity

Sandwich silicidation for fully silicided gate formation

#4 | 2014-08-28
US20140242788A1
Electricity

Method of forming a high quality interfacial layer for a semiconductor device by performing a low temperature ALD process

#5 | 2013-12-26
US20130344692A1
Electricity

Methods for fabricating integrated circuits with fluorine passivation

#6 | 2013-10-24
US20130280873A1
Electricity

ENHANCED DEVICE RELIABILITY OF A SEMICONDUCTOR DEVICE BY PROVIDING SUPERIOR PROCESS CONDITIONS IN HIGH-K FILM GROWTH

#7 | 2013-10-10
US20130267086A1
Electricity

Passivating point defects in high-K gate dielectric layers during gate stack formation

#8 | 2013-08-29
US20130224927A1
Electricity

Methods for fabricating integrated circuits with narrow, metal filled openings

#9 | 2013-05-02
US20130109166A1
Electricity

Methods for fabricating integrated circuits with controlled P-channel threshold voltage

#10 | 2008-07-24
US20080176375A1
Electricity

METHOD FOR FORMING A DIELECTRIC LAYER

#11 | 2008-07-24
US20080173919A1
Electricity

Deposition method for a transition-metal-containing dielectric

#12 | 2007-11-22
US20070269598A1
Chemistry; metallurgy

METHOD, APPARATUS AND STARTING MATERIAL FOR PROVIDING A GASEOUS PRECURSOR

#13 | 2007-07-12
US20070161180A1
Chemistry; metallurgy

Automatic layer deposition process

#14 | 2006-08-31
US20060192271A1
Electricity

Method of manufacturing a dielectric layer and corresponding semiconductor device

InventorID:

223283 ⎘