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Inventor profile of:

Yifeng Wu

City:

Goleta, California

Country:

United States

Published Applications:

124

Last publication date:

2025-08-28

Top Assignees for applications by Yifeng Wu

The entities that hold a legal rights for patent applications filed by inventor Wu Yifeng:

Transphorm Inc. 50 Goleta, CA United States
Cree, Inc. 31 Goleta, CA United States
Cree, Inc. 30 Durham, NC United States
Transphorm Technology, Inc. 7 Goleta, CA United States
The Regents of the University of California 3 Oakland, CA United States
Wolfspeed, Inc. 2 Durham, NC United States
Transphorm Inc. 1 Goleta, GA United States

Recent patent applications by Wu Yifeng

Yifeng Wu from Goleta, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-08-28

US20250275168A1

INTEGRATED DESIGN FOR III-NITRIDE DEVICES

#2 | 2024-01-11

US20240014312A1

Integrated design for III-Nitride devices

#3 | 2023-12-28

US20230420526A1

WIDE BANDGAP TRANSISTORS WITH GATE-SOURCE FIELD PLATES

#4 | 2023-09-28

US20230307429A1

Module configurations for integrated III-nitride devices

#5 | 2022-04-19

US17138101

Switching circuits having drain connected ferrite beads

#6 | 2021-12-30

US20210408273A1

Integrated design for III-Nitride devices

#7 | 2021-12-16

US20210391311A1

Module configurations for integrated III-Nitride devices

#8 | 2021-01-19

US16810735

Switching circuits having drain connected ferrite beads

#9 | 2020-04-21

US16195578

Switching circuits having drain connected ferrite beads

#10 | 2018-08-28

US15428726

Bridgeless power factor correction circuits

#11 | 2017-12-21

US20170365670A1

Wide bandgap field effect transistors with source connected field plates

#12 | 2017-08-03

US20170222640A1

Switching circuits having ferrite beads

#13 | 2017-03-23

US20170085258A1

Switching circuits having ferrite beads

#14 | 2017-03-07

US14802333

Bridgeless power factor correction circuits

#15 | 2017-01-26

US20170025506A1

Fabrication of single or multiple gate field plates

#16 | 2016-08-18

US20160240470A1

Semiconductor modules and methods of forming the same

#17 | 2016-03-17

US20160079223A1

Semiconductor power modules and devices

#18 | 2016-03-17

US20160079154A1

SEMICONDUCTOR MODULES AND METHODS OF FORMING THE SAME

#19 | 2016-02-11

US20160043078A1

Semiconductor electronic components with integrated current limiters

#20 | 2016-02-04

US20160035870A1

High voltage GaN transistor

#21 | 2016-01-07

US20160006428A1

Switching circuits having ferrite beads

#22 | 2015-09-03

US20150249447A1

Gate drivers for circuits based on semiconductor devices

#23 | 2015-05-21

US20150137217A1

Semiconductor power modules and devices

#24 | 2015-03-12

US20150070076A1

Bridge circuits and their components

#25 | 2015-02-12

US20150041861A1

III-N device structures and methods

#26 | 2014-12-25

US20140377930A1

Method of forming electronic components with increased reliability

#27 | 2014-12-25

US20140377911A1

Package configurations for low EMI circuits

#28 | 2014-12-11

US20140362536A1

Group III nitride based flip-chip integrated circuit and method for fabricating

#29 | 2014-11-06

US20140329358A1

Electronic devices and components for high efficiency power circuits

#30 | 2014-11-06

US20140327412A1

Inductive load power switching circuits

#31 | 2014-10-09

US20140299940A1

Semiconductor electronic components with integrated current limiters

#32 | 2014-10-02

US20140292395A1

Gate drivers for circuits based on semiconductor devices

#33 | 2014-10-02

US20140292394A1

Method of forming electronic components with reactive filters

#34 | 2014-07-17

US20140197421A1

Electrode configurations for semiconductor devices

#35 | 2014-04-17

US20140103989A1

Semiconductor power modules and devices

#36 | 2014-04-10

US20140099757A1

III-N device structures and methods

#37 | 2014-04-03

US20140094010A1

Method of forming electronic components with increased reliability

#38 | 2014-02-27

US20140054603A1

Semiconductor heterostructure diodes

#39 | 2014-02-20

US20140048849A1

Package configurations for low EMI circuits

#40 | 2014-02-13

US20140042495A1

Semiconductor electronic components and circuits

#41 | 2014-01-23

US20140021934A1

DEVICES AND COMPONENTS FOR POWER CONVERSION CIRCUITS

#42 | 2014-01-16

US20140015066A1

Semiconductor electronic components with integrated current limiters

#43 | 2013-12-26

US20130344687A1

Methods of fabricating thick semi-insulating or insulating epitaxial gallium nitride layers

#44 | 2013-12-05

US20130320939A1

Inductive load power switching circuits

#45 | 2013-09-26

US20130249622A1

Bridge circuits and their components

#46 | 2013-09-12

US20130234257A1

Package configurations for low EMI circuits

#47 | 2013-08-29

US20130222045A1

Semiconductor power modules and devices

#48 | 2013-06-13

US20130147540A1

Semiconductor modules and methods of forming the same

#49 | 2013-04-11

US20130088280A1

High power semiconductor electronic components with increased reliability

#50 | 2013-03-21

US20130069527A1

LED with integrated constant current driver

#51 | 2013-03-14

US20130062621A1

III-N device structures having a non-insulating substrate

#52 | 2013-01-10

US20130009692A1

Inductive load power switching circuits

#53 | 2013-01-10

US20130009613A1

Inductive load power switching circuits

#54 | 2012-12-13

US20120314371A1

Group III nitride based flip-chip integrated circuit and method for fabricating

#55 | 2012-10-25

US20120267640A1

Semiconductor heterostructure diodes

#56 | 2012-10-18

US20120262078A1

LED with integrated constant current driver

#57 | 2012-09-20

US20120235160A1

Normally-off semiconductor devices

#58 | 2012-09-20

US20120235159A1

Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions

#59 | 2012-09-13

US20120228675A1

High temperature performance capable gallium nitride transistor

#60 | 2012-09-06

US20120223366A1

High voltage GaN transistor

#61 | 2012-09-06

US20120223320A1

Electrode configurations for semiconductor devices

#62 | 2012-08-30

US20120218025A1

Electronic components with reactive filters

#63 | 2012-08-02

US20120193677A1

III-N device structures and methods

#64 | 2012-05-31

US20120132973A1

Package configurations for low EMI circuits

#65 | 2012-05-31

US20120132959A1

Wide bandgap transistor devices with field plates

#66 | 2012-05-03

US20120104955A1

LED with integrated constant current driver

#67 | 2012-03-01

US20120049243A1

GaN based HEMTs with buried field plates

#68 | 2011-10-27

US20110263102A1

Methods of fabricating normally-off semiconductor devices

#69 | 2011-10-13

US20110249477A1

Bridge circuits and their components

#70 | 2011-09-15

US20110220966A1

Robust transistors with fluorine treatment

#71 | 2011-08-11

US20110193619A1

Semiconductor electronic components and circuits

#72 | 2011-07-14

US20110169549A1

Electronic devices and components for high efficiency power circuits

#73 | 2011-07-14

US20110169054A1

Wide bandgap HEMTS with source connected field plates

#74 | 2011-06-02

US20110127541A1

Semiconductor heterostructure diodes

#75 | 2011-05-19

US20110114997A1

High voltage GaN transistors

#76 | 2011-05-05

US20110101466A1

Package configurations for low EMI circuits

#77 | 2011-03-17

US20110062579A1

Group III nitride based flip-chip integrated circuit and method for fabricating

#78 | 2011-03-10

US20110057232A1

Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions

#79 | 2011-01-27

US20110018062A1

Fabrication of single or multiple gate field plates

#80 | 2010-08-12

US20100201439A1

III-nitride devices and circuits

#81 | 2010-07-29

US20100187570A1

Heterojunction transistors having barrier layer bandgaps greater than channel layer bandgaps and related methods

#82 | 2010-06-10

US20100140660A1

Semiconductor heterostructure diodes

#83 | 2010-05-06

US20100109051A1

High voltage GaN transistors

#84 | 2010-03-25

US20100073067A1

Inductive load power switching circuits

#85 | 2010-02-18

US20100041188A1

Robust transistors with fluorine treatment

#86 | 2010-02-04

US20100025730A1

Normally-off semiconductor devices

#87 | 2009-12-24

US20090315078A1

Insulting gate AlGaN/GaN HEMT

#88 | 2009-12-17

US20090309124A1

LED fabrication via ion implant isolation

#89 | 2009-10-29

US20090267116A1

Wide bandgap transistors with multiple field plates

#90 | 2009-09-24

US20090236635A1

Wide bandgap HEMTs with source connected field plates

#91 | 2009-09-10

US20090224288A1

Wide bandgap transistor devices with field plates

#92 | 2009-08-13

US20090201072A1

Bridge circuits and their components

#93 | 2009-04-23

US20090101939A1

Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions

#94 | 2009-03-12

US20090065810A1

III-nitride bidirectional switches

#95 | 2009-01-22

US20090021180A1

LED with integrated constant current driver

#96 | 2008-10-16

US20080252229A1

High efficiency AC LED driver circuit

#97 | 2008-09-25

US20080230786A1

High temperature performance capable gallium nitride transistor

#98 | 2008-06-05

US20080128752A1

GaN based HEMTs with buried field plates

#99 | 2008-05-22

US20080116492A1

High voltage GaN transistors

#100 | 2007-10-11

US20070235775A1

High efficiency and/or high power density wide bandgap transistors

InventorID:

23168 ⎘