Inventor profile of:

David Kohen

City:

Phoenix, Arizona

Country:

United States

Published Applications:

11

Last publication date:

2024-08-15

Top Assignees for applications by David Kohen

The entities that hold a legal rights for patent applications filed by inventor Kohen David:

Recent patent applications by Kohen David

David Kohen from Phoenix, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-08-15
US20240274437A1
Electricity

METHODS OF FORMING STRUCTURES INCLUDING SILICON GERMANIUM AND SILICON LAYERS, DEVICES FORMED USING THE METHODS, AND SYSTEMS FOR PERFORMING THE METHODS

#2 | 2023-05-11
US20230145240A1
Electricity

METHODS FOR SELECTIVE DEPOSITION UTILIZING N-TYPE DOPANTS AND/OR ALTERNATIVE DOPANTS TO ACHIEVE HIGH DOPANT INCORPORATION

#3 | 2021-10-21
US20210327704A1
Electricity

Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods

#4 | 2021-05-06
US20210134588A1
Electricity

Methods for forming a semiconductor structure and related semiconductor structures

#5 | 2021-02-04
US20210035802A1
Electricity

Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation

#6 | 2020-08-20
US20200266208A1
Electricity

Apparatus and methods for plug fill deposition in 3-D NAND applications

#7 | 2020-05-07
US20200144058A1
Electricity

Methods for depositing a boron doped silicon germanium film

#8 | 2019-10-03
US20190304780A1
Electricity

Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber

#9 | 2019-08-01
US20190237327A1
Electricity

Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures

#10 | 2019-05-02
US20190131124A1
Electricity

Methods for forming a semiconductor structure and related semiconductor structures

#11 | 2019-02-28
US20190067004A1
Electricity

Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures

InventorID:

2443920 ⎘