Inventor profile of:

Yuri Tkachev

City:

Sunnyvale, California

Country:

United States

Published Applications:

19

Last publication date:

2025-09-11

Top Assignees for applications by Yuri Tkachev

The entities that hold a legal rights for patent applications filed by inventor Tkachev Yuri:

Recent patent applications by Tkachev Yuri

Yuri Tkachev from Sunnyvale, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-09-11
US20250285684A1
Physics

SEQUENTIAL ERASE FOR TUNING THE PROGRAM STATE OF NON-VOLATILE MEMORY CELLS

#2 | 2025-06-26
US20250208774A1
Physics

PROGRAMMABLE LOGIC BLOCK COMPRISING FLASH MEMORY ARRAY TO STORE CONFIGURATION DATA FOR PROGRAMMABLE LOGIC

#3 | 2025-06-05
US20250185523A1
Electricity

LOW VOLTAGE RESISTIVE RANDOM ACCESS MEMORY (RRAM) CELLS AND METHOD OF FORMATION

#4 | 2024-08-15
US20240274591A1
Electricity

SEMICONDUCTOR DEVICE WITH COMMUNICATION RING

#5 | 2023-03-30
US20230101585A1
Physics

Method of determining defective die containing non-volatile memory cells

#6 | 2022-10-20
US20220336020A1
Physics

ULTRA-PRECISE TUNING OF NEURAL MEMORY CELLS

#7 | 2021-12-23
US20210399127A1
Electricity

Method of forming split gate memory cells with thinned side edge tunnel oxide

#8 | 2021-08-26
US20210264983A1
Physics

Ultra-precise tuning of analog neural memory cells in a deep learning artificial neural network

#9 | 2020-02-27
US20200066738A1
Electricity

Method of programming a split-gate flash memory cell with erase gate

#10 | 2016-01-28
US20160027517A1
Physics

System and method to inhibit erasing of portion of sector of split gate flash memory cells

#11 | 2015-02-05
US20150035040A1
Electricity

Split gate non-volatile flash memory cell having a silicon-metal floating gate and method of making same

#12 | 2014-09-18
US20140269062A1
Physics

Low leakage, low threshold voltage, split-gate flash cell operation

#13 | 2014-07-17
US20140198578A1
Physics

Method of operating a split gate flash memory cell with coupling gate

#14 | 2014-02-27
US20140054667A1
Electricity

Split-gate memory cell with depletion-mode floating gate channel, and method of making same

#15 | 2013-05-16
US20130121085A1
Physics

Method of operating a split gate flash memory cell with coupling gate

#16 | 2011-06-02
US20110127599A1
Electricity

Split Gate Non-volatile Flash Memory Cell Having A Floating Gate, Control Gate, Select Gate And An Erase Gate With An Overhang Over The Floating Gate, Array And Method Of Manufacturing

#17 | 2011-03-31
US20110076816A1
Electricity

Split gate non-volatile flash memory cell having a floating gate, control gate, select gate and an erase gate with an overhang over the floating gate, array and method of manufacturing

#18 | 2010-03-04
US20100054043A1
Electricity

Split gate non-volatile flash memory cell having a floating gate, control gate, select gate and an erase gate with an overhang over the floating gate, array and method of manufacturing

#19 | 2009-02-12
US20090039410A1
Electricity

Split Gate Non-Volatile Flash Memory Cell Having A Floating Gate, Control Gate, Select Gate And An Erase Gate With An Overhang Over The Floating Gate, Array And Method Of Manufacturing

InventorID:

244978 ⎘