Inventor profile of:

John Foster

City:

Mountain View, California

Country:

United States

Published Applications:

30

Last publication date:

2026-06-04

Top Assignees for applications by John Foster

The entities that hold a legal rights for patent applications filed by inventor Foster John:

Recent patent applications by Foster John

John Foster from Mountain View, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-06-04
US20260152790A1
Chemistry; metallurgy

USE OF TITANIUM NITRIDE AS AN ELECTRODE IN NON-FARADAIC ELECTROCHEMICAL CELL

#2 | 2022-09-15
US20220291193A1
Physics

Small aperture large electrode cell

#3 | 2021-12-09
US20210381046A1
Chemistry; metallurgy

USE OF TITANIUM NITRIDE AS AN ELECTRODE IN NON-FARADAIC ELECTROCHEMICAL CELL

#4 | 2021-05-06
US20210130945A1
Chemistry; metallurgy

ELECTROCHEMICAL CELL WITH INCREASED CURRENT DENSITY

#5 | 2021-03-11
US20210072221A1
Physics

Small aperture large electrode cell

#6 | 2021-02-11
US20210041392A1
Physics

NANOPORE WELL STRUCTURES AND METHODS

#7 | 2019-05-30
US20190161795A1
Chemistry; metallurgy

Use of titanium nitride as an electrode in non-faradaic electrochemical cell

#8 | 2018-10-18
US20180299400A1
Physics

USE OF FLUOROPOLYMERS AS A HYDROPHOBIC LAYER TO SUPPORT LIPID BILAYER FORMATION FOR NANOPORE BASED DNA SEQUENCING

#9 | 2018-09-20
US20180266980A1
Physics

Nanopore well structures and methods

#10 | 2017-07-27
US20170212079A1
Physics

Use of titanium nitride as a counter electrode

#11 | 2017-03-02
US20170059546A1
Physics

Small aperture large electrode cell

#12 | 2017-03-02
US20170058397A1
Chemistry; metallurgy

Electrochemical cell with increased current density

#13 | 2017-02-09
US20170037467A1
Chemistry; metallurgy

Use of titanium nitride as an electrode in non-faradaic electrochemical cell

#14 | 2016-06-23
US20160181087A1
Electricity

Particle removal with minimal etching of silicon-germanium

#15 | 2015-12-24
US20150371872A1
Electricity

Solution based etching of titanium carbide and titanium nitride structures

#16 | 2015-06-04
US20150153302A1
Physics

Process for biosensor well formation

#17 | 2015-05-14
US20150132953A1
Electricity

Etching of semiconductor structures that include titanium-based layers

#18 | 2014-06-26
US20140179112A1
Electricity

High Productivity Combinatorial Techniques for Titanium Nitride Etching

#19 | 2014-06-26
US20140179082A1
Electricity

Selective Etching of Hafnium Oxide Using Non-Aqueous Solutions

#20 | 2014-02-27
US20140057371A1
Electricity

High productivity combinatorial workflow for post gate etch clean development

#21 | 2014-02-27
US20140055152A1
Physics

Circular transmission line methods compatible with combinatorial processing of semiconductors

#22 | 2014-01-09
US20140011367A1
Electricity

Low temperature etching of silicon nitride structures using phosphoric acid solutions

#23 | 2013-12-10
US13562564
-

High productivity combinatorial workflow for post gate etch clean development

#24 | 2013-11-28
US20130316472A1
Electricity

High productivity combinatorial oxide terracing and PVD/ALD metal deposition combined with lithography for gate work function extraction

#25 | 2013-10-31
US20130285159A1
Electricity

Method for etching gate stack

#26 | 2013-10-10
US20130267091A1
Electricity

Process to remove Ni and Pt residues for NiPtSi application using chlorine gas

#27 | 2013-08-08
US20130203245A1
Electricity

Methods for PFET fabrication using APM solutions

#28 | 2013-05-16
US20130122671A1
Electricity

Process to remove Ni and Pt residues for NiPtSi applications

#29 | 2013-05-16
US20130122670A1
Electricity

Process to remove Ni and Pt residues for NiPtSi applications using chlorine gas

#30 | 2012-11-22
US20120295431A1
Electricity

Method for etching gate stack

InventorID:

248078 ⎘