Ossining, New York
United States
17
2013-10-10
The entities that hold a legal rights for patent applications filed by inventor Yang Bin:
Bin Yang from Ossining, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Method to control metal semiconductor micro-structure
#2 | 2013-09-19Use of band edge gate metals as source drain contacts
#3 | 2013-09-19USE OF BAND EDGE GATE METALS AS SOURCE DRAIN CONTACTS
#4 | 2013-01-10Method of fabricating an epitaxial Ni silicide film
#5 | 2012-11-29Multigate structure formed with electroless metal deposition
#6 | 2012-11-22Metal-Semiconductor Intermixed Regions
#7 | 2012-07-26Metal-semiconductor intermixed regions
#8 | 2012-07-19Method to control metal semiconductor micro-structure
#9 | 2012-05-31Multigate structure formed with electroless metal deposition
#10 | 2012-05-10INTERMIXED SILICIDE FOR REDUCTION OF EXTERNAL RESISTANCE IN INTEGRATED CIRCUIT DEVICES
#11 | 2012-04-26Semiconductor device with reduced junction leakage and an associated method of forming such a semiconductor device
#12 | 2011-10-27Use of epitaxial Ni silicide
#13 | 2011-10-06Silicide contact formation
#14 | 2011-10-04Method for forming a protection layer over metal semiconductor contact and structure formed thereon
#15 | 2011-09-22Method for forming an SOI schottky source/drain device to control encroachment and delamination of silicide
#16 | 2011-09-22SOI schottky source/drain device structure to control encroachment and delamination of silicide
#17 | 2011-06-23FORMING A CARBON CONTAINING LAYER TO FACILITATE SILICIDE STABILITY IN A SILICON GERMANIUM MATERIAL
28759 ⎘