San Jose, California
United States
12
2025-11-27
The entities that hold a legal rights for patent applications filed by inventor RAMANAN Narayanan:
Narayanan RAMANAN from San Jose, US has applied for patents for these inventions. The list has both pending applications and granted patents:
FLASH MEMORY HAVING IMPROVED PERFORMANCE AS A CONSEQUENCE OF PROGRAM DIRECTION ALONG A FLASH STORAGE CELL COLUMN
#2 | 2024-10-31MODULATION OF SOURCE VOLTAGE IN NAND-FLASH ARRAY READ
#3 | 2022-11-17Program verify process having placement aware pre-program verify (PPV) bucket size modulation
#4 | 2022-09-15Modulation of source voltage in NAND-flash array read
#5 | 2022-09-15NAND sensing circuit and technique for read-disturb mitigation
#6 | 2022-09-08Method and apparatus to mitigate hot electron read disturbs in 3D nand devices
#7 | 2022-06-30Dynamic detection and dynamic adjustment of sub-threshold swing in a memory cell sensing circuit
#8 | 2022-06-02MEMORY CELL SENSING CIRCUIT WITH ADJUSTED BIAS FROM PRE-BOOST OPERATION
#9 | 2022-03-17FLASH MEMORY HAVING IMPROVED PERFORMANCE AS A CONSEQUENCE OF PROGRAM DIRECTION ALONG A FLASH STORAGE CELL COLUMN
#10 | 2022-01-27Method and apparatus to mitigate hot electron read disturbs in 3D NAND devices
#11 | 2021-08-19Device, system, and method to verify data programming of a multi-level cell memory based on one of temperature, pressure, wear condition or relative position of the memory cell
#12 | 2020-10-29Program verify technique for non-volatile memory
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