THOMAS STRAUBINGER

City:

ERLANGEN

Country:

Germany

Published Applications:

Last publication date:

2012-12-06

Top Assignees for applications by THOMAS STRAUBINGER

The entities that hold a legal rights for patent applications filed by inventor STRAUBINGER THOMAS:

SiCrystal AG 6 ERLANGEN, Germany
SiCrystal AG 2 Nuremberg, Germany

Recent patent applications by STRAUBINGER THOMAS

THOMAS STRAUBINGER from ERLANGEN, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2012-12-06

US20120308759A1

Chemistry; metallurgy

LOW-DISLOCATION MONOCRYSTALLINE ALN SUBSTRATE

#2 | 2011-12-08

US20110300323A1

Chemistry; metallurgy

Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distribution

#3 | 2011-04-14

US20110086213A1

Chemistry; metallurgy

METHOD OF PRODUCING A SILICON CARBIDE BULK SINGLE CRYSTAL WITH THERMAL TREATMENT, AND LOW-IMPEDANCE MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE

#4 | 2010-10-07

US20100255305A1

Chemistry; metallurgy

Production method for a low-dislocation bulk AlN single crystal and low-dislocation monocrystalline AlN substrate

#5 | 2010-07-15

US20100175614A1

Chemistry; metallurgy

THERMALLY INSULATED CONFIGURATION AND METHOD FOR PRODUCING A BULK SIC CRYSTAL

#6 | 2010-06-24

US20100159182A1

Chemistry; metallurgy

Production Method for a Codoped Bulk SiC Crystal and High-Impedance SiC Substrate

InventorID:

3308661 ⎘