Nuremberg
Germany
3
2013-11-21
3
2016-06-28
These are the the leading inventors for applications assigned to SiCrystal AG:
SiCrystal AG based in Nuremberg, DE has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growing
#2 | 2011-12-08 ✅ Patent 8,865,324 granted on 2014-10-21Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distribution
#3 | 2010-10-07 ✅ Patent 8,303,924 granted on 2012-11-06Production method for a low-dislocation bulk AlN single crystal and low-dislocation monocrystalline AlN substrate
Also check out SiCrystal AG's (Nuremberg, Germany) applicant profile with 2 patent applications submitted.
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