SiCrystal AG

City:

ERLANGEN

Country:

Germany

Published Applications:

Last publication date:

2012-12-06

Patent Grants:

Last grant date:

2014-10-21

Top Inventors for applications by SiCrystal AG

These are the the leading inventors for applications assigned to SiCrystal AG:

THOMAS STRAUBINGER 6 ERLANGEN, Germany
ANDREAS WOHLFART 3 ERLANGEN, Germany
RALPH-UWE BARZ 2 ERLANGEN, Germany
Michael Vogel 1 Nuremberg, Germany

MICHAEL VOGEL 1 NUERNBERG, Germany
Martin Kölbl 1 Nittenau, Germany
MICHAEL VOGEL 1 NURNBERG, Germany

Recent patent applications by SiCrystal AG

SiCrystal AG based in ERLANGEN, DE has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2012-12-06

US20120308759A1

Chemistry; metallurgy

LOW-DISLOCATION MONOCRYSTALLINE ALN SUBSTRATE

#2 | 2011-12-08 ✅ Patent 8,865,324 granted on 2014-10-21

US20110300323A1

Chemistry; metallurgy

Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distribution

#3 | 2011-04-14

US20110086213A1

Chemistry; metallurgy

METHOD OF PRODUCING A SILICON CARBIDE BULK SINGLE CRYSTAL WITH THERMAL TREATMENT, AND LOW-IMPEDANCE MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE

#4 | 2010-10-07 ✅ Patent 8,303,924 granted on 2012-11-06

US20100255305A1

Chemistry; metallurgy

Production method for a low-dislocation bulk AlN single crystal and low-dislocation monocrystalline AlN substrate

#5 | 2010-07-15

US20100175614A1

Chemistry; metallurgy

THERMALLY INSULATED CONFIGURATION AND METHOD FOR PRODUCING A BULK SIC CRYSTAL

#6 | 2010-06-24

US20100159182A1

Chemistry; metallurgy

Production Method for a Codoped Bulk SiC Crystal and High-Impedance SiC Substrate

AssigneeID:

194763 ⎘