Inventor profile of:

Mihir Tendulkar

City:

Mountain View, California

Country:

United States

Published Applications:

26

Last publication date:

2016-03-01

Top Assignees for applications by Mihir Tendulkar

The entities that hold a legal rights for patent applications filed by inventor Tendulkar Mihir:

Recent patent applications by Tendulkar Mihir

Mihir Tendulkar from Mountain View, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2016-03-01
US14561212
Electricity

Conductive barriers for ternary nitride thin-film resistors

#2 | 2016-01-05
US14565097
Electricity

Doped narrow band gap nitrides for embedded resistors of resistive random access memory cells

#3 | 2015-07-02
US20150188044A1
Electricity

Embedded Resistors for Resistive Random Access Memory Cells

#4 | 2015-07-02
US20150188039A1
Electricity

Embedded Resistors with Oxygen Gettering Layers

#5 | 2015-07-02
US20150187841A1
Electricity

Method of forming current-programmable inline resistor

#6 | 2015-07-02
US20150184283A1
Chemistry; metallurgy

Ternary metal nitride formation by annealing constituent layers

#7 | 2015-03-12
US20150069319A1
Electricity

Method of forming anneal-resistant embedded resistor for non-volatile memory application

#8 | 2014-12-25
US20140377931A1
Electricity

Metal aluminum nitride embedded resistors for resistive random memory access cells

#9 | 2014-12-11
US20140363948A1
Electricity

Method of forming anneal-resistant embedded resistor for non-volatile memory application

#10 | 2014-12-04
US20140357046A1
Electricity

ReRAM cells including TaSiN embedded resistors

#11 | 2014-09-18
US20140264223A1
Electricity

Metal aluminum nitride embedded resistors for resistive random memory access cells

#12 | 2014-09-04
US20140246640A1
Electricity

Doped electrodes used to inhibit oxygen loss in ReRAM device

#13 | 2014-06-26
US20140175367A1
Electricity

Materials for Thin Resisive Switching Layers of Re-RAM Cells

#14 | 2014-06-26
US20140175363A1
Electricity

Forming nonvolatile memory elements by diffusing oxygen into electrodes

#15 | 2014-06-26
US20140175362A1
Electricity

Limited maximum fields of electrode-switching layer interfaces in Re-RAM cells

#16 | 2014-06-26
US20140175360A1
Electricity

Bilayered Oxide Structures for ReRAM Cells

#17 | 2014-06-19
US20140166969A1
Electricity

Nonvolatile memory device using a tunnel oxide as a passive current steering element

#18 | 2014-06-05
US20140151625A1
Electricity

Nonvolatile memory device using a varistor as a current limiter element

#19 | 2014-06-05
US20140151621A1
Electricity

Method of forming anneal-resistant embedded resistor for non-volatile memory application

#20 | 2014-04-17
US20140103284A1
Electricity

ReRAM cells including TaSiN embedded resistors

#21 | 2014-03-27
US20140084948A1
Electricity

Test vehicles for evaluating resistance of thin layers

#22 | 2013-12-19
US20130337606A1
Electricity

Nonvolatile memory device using a tunnel nitride as a current limiter element

#23 | 2013-08-22
US20130214237A1
Electricity

Nonvolatile memory device using a tunnel oxide layer and oxygen blocking layer as a current limiter element

#24 | 2013-08-22
US20130214232A1
Electricity

Nonvolatile memory device using a varistor as a current limiter element

#25 | 2013-08-08
US20130200325A1
Electricity

Nonvolatile memory device using a tunnel nitride as a current limiter element

#26 | 2013-07-25
US20130187110A1
Electricity

Nonvolatile memory device using a tunnel oxide as a current limiter element

InventorID:

350683 ⎘