Gyeonggi-do
South Korea
22
2010-06-10
The entities that hold a legal rights for patent applications filed by inventor Bae Jun-Soo:
Jun-Soo Bae from Gyeonggi-do, KR has applied for patents for these inventions. The list has both pending applications and granted patents:
Methods of forming phase-changeable memory devices including an adiabatic layer
#2 | 2010-01-28Multi-layer phase-changeable memory devices
#3 | 2009-11-19METHOD OF FORMING A PHASE CHANGEABLE STRUCTURE
#4 | 2009-09-17Magnetic Memory Devices Including Conductive Capping Layers
#5 | 2009-03-19Multi-level phase change memory device, program method thereof, and method and system including the same
#6 | 2009-01-01Methods of fabricating multi-layer phase-changeable memory devices
#7 | 2008-06-26Magnetic random access memory device and method of forming the same
#8 | 2008-03-20Phase change memory devices including memory cells having different phase change materials and related methods and systems
#9 | 2007-10-04Methods of Forming Magnetic Random Access Memory Devices Including Contact Plugs Between Magnetic Tunnel Junction Structures and Substrates
#10 | 2007-09-27Method of forming a phase changeable structure
#11 | 2007-09-20Multi-layer phase-changeable memory devices
#12 | 2007-09-06Magnetic Random Access Memory Devices Including Contact Plugs Between Magnetic Tunnel Junction Structures and Substrates and Related Methods
#13 | 2007-08-16Phase changeable structure and method of forming the same
#14 | 2007-07-19METHOD OF FORMING A PHASE-CHANGEABLE STRUCTURE
#15 | 2007-06-28Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier
#16 | 2007-02-22Magnetic memory device and method of fabricating the same
#17 | 2007-02-22MAGNETIC TUNNEL JUNCTION STRUCTURE HAVING AN OXIDIZED BUFFER LAYER AND METHOD OF FABRICATING THE SAME
#18 | 2006-11-02Methods of forming magnetic memory devices including oxidizing and etching magnetic layers
#19 | 2006-02-23Phase-changeable memory devices including an adiabatic layer
#20 | 2006-02-09Magnetic random access memory devices including contact plugs between magnetic tunnel junction structures and substrates and related methods
#21 | 2005-02-17Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the same
#22 | 2005-01-13Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier
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