Inventor profile of:

Thomas Nirschl

City:

Munich

Country:

Germany

Published Applications:

17

Last publication date:

2014-05-08

Top Assignees for applications by Thomas Nirschl

The entities that hold a legal rights for patent applications filed by inventor Nirschl Thomas:

Recent patent applications by Nirschl Thomas

Thomas Nirschl from Munich, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2014-05-08
US20140124827A1
Electricity

Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor

#2 | 2013-04-25
US20130099289A1
Electricity

Compact memory arrays

#3 | 2012-06-21
US20120155189A1
Physics

System and method for level shifter

#4 | 2011-12-22
US20110310674A1
Physics

System and method for bit-line control using a driver and a pre-driver

#5 | 2011-08-11
US20110194364A1
Physics

NVM overlapping write method

#6 | 2010-12-02
US20100301896A1
Physics

Phase-change memory security device

#7 | 2010-10-28
US20100271855A1
Electricity

Memory cell arrangements

#8 | 2010-09-09
US20100226178A1
Physics

APPARATUS AND METHODS FOR CORRECTING OVER-ERASED FLASH MEMORY CELLS

#9 | 2010-07-22
US20100182147A1
Physics

REMOTE STORAGE OF DATA IN PHASE-CHANGE MEMORY

#10 | 2010-06-10
US20100146189A1
Physics

Memory circuit and method for programming in parallel a number of bits within data blocks

#11 | 2010-04-29
US20100103722A1
Physics

Method of programming resistivity changing memory

#12 | 2010-03-18
US20100065891A1
Electricity

Compact memory arrays

#13 | 2009-12-17
US20090309149A1
Electricity

Memory cell arrangements and methods for manufacturing a memory cell arrangement

#14 | 2009-06-11
US20090147563A1
Physics

Integrated circuit for programming a memory element

#15 | 2009-05-21
US20090127536A1
Performing operations; transporting

Integrated circuit having dielectric layer including nanocrystals

#16 | 2009-01-01
US20090003046A1
Physics

Memory with dynamic redundancy configuration

#17 | 2008-07-03
US20080158942A1
Electricity

MEMORY HAVING STORAGE LOCATIONS WITHIN A COMMON VOLUME OF PHASE CHANGE MATERIAL

InventorID:

3626648 ⎘