Inventor profile of:

Thomas Vogelsang

City:

Jericho, Vermont

Country:

United States

Published Applications:

52

Last publication date:

2026-06-18

Top Assignees for applications by Thomas Vogelsang

The entities that hold a legal rights for patent applications filed by inventor Vogelsang Thomas:

Recent patent applications by Vogelsang Thomas

Thomas Vogelsang from Jericho, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-06-18
US20260171184A1
Physics

MEMORY CONTROLLER HAVING METADATA ACCESS MODE

#2 | 2026-06-11
US20260165177A1
Electricity

CONFIGURABLE ELECTRICAL PAD DIE PACKAGE

#3 | 2026-05-28
US20260148795A1
Physics

DYNAMIC, RANDOM-ACCESS MEMORY WITH HIDDEN MEMORY SCRUBBING

#4 | 2026-05-14
US20260133719A1
Physics

Memory Controller and Command Buffer for Parallel Metadata Access and Enhanced Error Correction

#5 | 2026-05-14
US20260133707A1
Physics

LOAD-REDUCED DRAM STACK

#6 | 2026-05-07
US20260128076A1
Physics

ROW HAMMER MITIGATION

#7 | 2026-05-07
US20260127070A1
Physics

Buffer Component for Interleaving Data and Metadata for Error Correction

#8 | 2026-04-23
US20260112443A1
Physics

DYNAMIC RANDOM ACCESS MEMORY (DRAM) DEVICE WITH VARIABLE BURST LENGTHS

#9 | 2026-01-22
US20260023492A1
Physics

Multi-Modal Refresh of Dynamic, Random-Access Memory

#10 | 2026-01-15
US20260018206A1
Physics

Memory with Interleaved Preset

#11 | 2026-01-08
US20260010303A1
Physics

MEMORY MODULE WITH PERSISTENT CALIBRATION

#12 | 2025-12-18
US20250383816A1
Physics

Stacked Memory Device with Paired Channels

#13 | 2025-12-04
US20250370626A1
Physics

PARTIAL ARRAY REFRESH TIMING

#14 | 2025-11-27
US20250364033A1
Physics

MEMORY SYSTEM WITH MULTIPLE OPEN ROWS PER BANK

#15 | 2025-11-27
US20250362834A1
Physics

STACKED DEVICE COMMUNICATION

#16 | 2025-11-13
US20250349343A1
Physics

3D MEMORY DEVICE WITH LOCAL COLUMN DECODING

#17 | 2025-11-13
US20250349337A1
Physics

DYNAMIC, RANDOM-ACCESS MEMORY WITH INTERLEAVED REFRESH

#18 | 2025-10-16
US20250321379A1
Physics

BUS DISTRIBUTION USING MULTIWAVELENGTH MULTIPLEXING

#19 | 2025-10-02
US20250307132A1
Physics

ROW AND COLUMN PAGE ACCESSES

#20 | 2025-07-17
US20250234564A1
Electricity

MULTI-DIE LAYER MEMORY DEVICE

#21 | 2025-07-17
US20250231714A1
Physics

MEMORY COMPONENT HAVING INTERNAL READ-MODIFY-WRITE OPERATION

#22 | 2025-06-26
US20250210068A1
Physics

STACKED DRAM DEVICE AND METHOD OF MANUFACTURE

#23 | 2025-06-19
US20250201328A1
Physics

DRAM RETENTION TEST METHOD FOR DYNAMIC ERROR CORRECTION

#24 | 2025-06-19
US20250201293A1
Physics

BOOSTED WRITEBACK VOLTAGE

#25 | 2025-05-15
US20250157503A1
Physics

MEMORY WITH DEFERRED FRACTIONAL ROW ACTIVATION

#26 | 2025-04-24
US20250130892A1
Physics

MEMORY DEVICE WITH CONFIGURABLE ADAPTIVE DOUBLE DEVICE DATA CORRECTION

#27 | 2025-02-27
US20250069641A1
Physics

APPARATUS AND METHOD FOR SELECTIVE REFRESH SUPPRESSION

#28 | 2025-02-06
US20250045197A1
Physics

DRAM METADATA ACCESS

#29 | 2025-01-23
US20250028467A1
Physics

BLOCK COPY

#30 | 2024-12-26
US20240428840A1
Physics

MEMORY DEVICE WITH FINE-GRAINED REFRESH

#31 | 2024-12-05
US20240404575A1
Physics

MEMORY DEVICE HAVING NON-UNIFORM REFRESH

#32 | 2024-11-21
US20240385974A1
Physics

MULTIPLE PRECISION MEMORY SYSTEM

#33 | 2024-11-07
US20240371432A1
Physics

SENSE AMPLIFIER FOR ACTIVE STANDBY OPERATION

#34 | 2024-10-24
US20240354014A1
Physics

Multi-Modal Refresh of Dynamic, Random-Access Memory

#35 | 2024-10-17
US20240345745A1
Physics

MEMORY MODULE WITH PERSISTENT CALIBRATION

#36 | 2024-09-12
US20240302977A1
Physics

LOAD-REDUCED DRAM STACK

#37 | 2024-09-05
US20240295961A1
Physics

MEMORY DEVICE HAVING HIDDEN REFRESH

#38 | 2009-05-14
US20090122856A1
Physics

METHOD AND APPARATUS FOR ENCODING DATA

#39 | 2009-03-05
US20090063916A1
Physics

Method for self-test and self-repair in a multi-chip package environment

#40 | 2008-11-13
US20080282001A1
Physics

Peak power reduction using fixed bit inversion

#41 | 2008-11-06
US20080273407A1
Physics

Circuit and method to find wordline-bitline shorts in a DRAM

#42 | 2008-10-02
US20080238468A1
Physics

Integrated circuit chip and method for testing an integrated circuit chip

#43 | 2008-07-10
US20080168331A1
Physics

Memory including error correction code circuit

#44 | 2008-07-10
US20080168217A1
Physics

Memory refresh system and method

#45 | 2007-03-29
US20070070754A1
Physics

Low equalized sense-amp for twin cell DRAMs

#46 | 2007-03-08
US20070053236A1
Physics

Fuse resistance read-out circuit

#47 | 2006-11-02
US20060245283A1
Physics

Sense amplifier for eliminating leakage current due to bit line shorts

#48 | 2006-08-24
US20060189082A1
Electricity

Standby current reduction over a process window with a trimmable well bias

#49 | 2006-06-29
US20060140040A1
Physics

Memory with selectable single cell or twin cell configuration

#50 | 2005-12-22
US20050280083A1
Electricity

Standby current reduction over a process window with a trimmable well bias

#51 | 2005-05-26
US20050110523A1
Electricity

Noisy clock test method and apparatus

#52 | 2005-01-06
US20050001298A1
Electricity

Multiple chip semiconductor arrangement having electrical components in separating regions

InventorID:

3897251 ⎘