Jericho, Vermont
United States
52
2026-06-18
The entities that hold a legal rights for patent applications filed by inventor Vogelsang Thomas:
Thomas Vogelsang from Jericho, US has applied for patents for these inventions. The list has both pending applications and granted patents:
MEMORY CONTROLLER HAVING METADATA ACCESS MODE
#2 | 2026-06-11CONFIGURABLE ELECTRICAL PAD DIE PACKAGE
#3 | 2026-05-28DYNAMIC, RANDOM-ACCESS MEMORY WITH HIDDEN MEMORY SCRUBBING
#4 | 2026-05-14Memory Controller and Command Buffer for Parallel Metadata Access and Enhanced Error Correction
#5 | 2026-05-14LOAD-REDUCED DRAM STACK
#6 | 2026-05-07ROW HAMMER MITIGATION
#7 | 2026-05-07Buffer Component for Interleaving Data and Metadata for Error Correction
#8 | 2026-04-23DYNAMIC RANDOM ACCESS MEMORY (DRAM) DEVICE WITH VARIABLE BURST LENGTHS
#9 | 2026-01-22Multi-Modal Refresh of Dynamic, Random-Access Memory
#10 | 2026-01-15Memory with Interleaved Preset
#11 | 2026-01-08MEMORY MODULE WITH PERSISTENT CALIBRATION
#12 | 2025-12-18Stacked Memory Device with Paired Channels
#13 | 2025-12-04PARTIAL ARRAY REFRESH TIMING
#14 | 2025-11-27MEMORY SYSTEM WITH MULTIPLE OPEN ROWS PER BANK
#15 | 2025-11-27STACKED DEVICE COMMUNICATION
#16 | 2025-11-133D MEMORY DEVICE WITH LOCAL COLUMN DECODING
#17 | 2025-11-13DYNAMIC, RANDOM-ACCESS MEMORY WITH INTERLEAVED REFRESH
#18 | 2025-10-16BUS DISTRIBUTION USING MULTIWAVELENGTH MULTIPLEXING
#19 | 2025-10-02ROW AND COLUMN PAGE ACCESSES
#20 | 2025-07-17MULTI-DIE LAYER MEMORY DEVICE
#21 | 2025-07-17MEMORY COMPONENT HAVING INTERNAL READ-MODIFY-WRITE OPERATION
#22 | 2025-06-26STACKED DRAM DEVICE AND METHOD OF MANUFACTURE
#23 | 2025-06-19DRAM RETENTION TEST METHOD FOR DYNAMIC ERROR CORRECTION
#24 | 2025-06-19BOOSTED WRITEBACK VOLTAGE
#25 | 2025-05-15MEMORY WITH DEFERRED FRACTIONAL ROW ACTIVATION
#26 | 2025-04-24MEMORY DEVICE WITH CONFIGURABLE ADAPTIVE DOUBLE DEVICE DATA CORRECTION
#27 | 2025-02-27APPARATUS AND METHOD FOR SELECTIVE REFRESH SUPPRESSION
#28 | 2025-02-06DRAM METADATA ACCESS
#29 | 2025-01-23BLOCK COPY
#30 | 2024-12-26MEMORY DEVICE WITH FINE-GRAINED REFRESH
#31 | 2024-12-05MEMORY DEVICE HAVING NON-UNIFORM REFRESH
#32 | 2024-11-21MULTIPLE PRECISION MEMORY SYSTEM
#33 | 2024-11-07SENSE AMPLIFIER FOR ACTIVE STANDBY OPERATION
#34 | 2024-10-24Multi-Modal Refresh of Dynamic, Random-Access Memory
#35 | 2024-10-17MEMORY MODULE WITH PERSISTENT CALIBRATION
#36 | 2024-09-12LOAD-REDUCED DRAM STACK
#37 | 2024-09-05MEMORY DEVICE HAVING HIDDEN REFRESH
#38 | 2009-05-14METHOD AND APPARATUS FOR ENCODING DATA
#39 | 2009-03-05Method for self-test and self-repair in a multi-chip package environment
#40 | 2008-11-13Peak power reduction using fixed bit inversion
#41 | 2008-11-06Circuit and method to find wordline-bitline shorts in a DRAM
#42 | 2008-10-02Integrated circuit chip and method for testing an integrated circuit chip
#43 | 2008-07-10Memory including error correction code circuit
#44 | 2008-07-10Memory refresh system and method
#45 | 2007-03-29Low equalized sense-amp for twin cell DRAMs
#46 | 2007-03-08Fuse resistance read-out circuit
#47 | 2006-11-02Sense amplifier for eliminating leakage current due to bit line shorts
#48 | 2006-08-24Standby current reduction over a process window with a trimmable well bias
#49 | 2006-06-29Memory with selectable single cell or twin cell configuration
#50 | 2005-12-22Standby current reduction over a process window with a trimmable well bias
#51 | 2005-05-26Noisy clock test method and apparatus
#52 | 2005-01-06Multiple chip semiconductor arrangement having electrical components in separating regions
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