Inventor profile of:

Chien-Lan Hsueh

City:

Campbell, California

Country:

United States

Published Applications:

22

Last publication date:

2016-05-12

Top Assignees for applications by Chien-Lan Hsueh

The entities that hold a legal rights for patent applications filed by inventor Hsueh Chien-Lan:

Recent patent applications by Hsueh Chien-Lan

Chien-Lan Hsueh from Campbell, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2016-05-12
US20160133837A1
Electricity

Low-Temperature Deposition of Metal Silicon Nitrides from Silicon Halide Precursors

#2 | 2016-05-12
US20160133691A1
Electricity

DRAM MIMCAP Stack with MoO2 Electrode

#3 | 2016-01-26
US14539105
Electricity

Low-temperature deposition of nitrides by UV-assisted ALD or CVD

#4 | 2015-07-02
US20150184287A1
Chemistry; metallurgy

Systems and Methods for Parallel Combinatorial Vapor Deposition Processing

#5 | 2015-06-25
US20150179937A1
Electricity

Metal organic chemical vapor deposition of embedded resistors for ReRAM cells

#6 | 2015-06-25
US20150179316A1
Electricity

Methods of forming nitrides at low substrate temperatures

#7 | 2015-06-25
US20150176122A1
Chemistry; metallurgy

Low-temperature growth of complex compound films

#8 | 2015-06-18
US20150170908A1
Electricity

High productivity combinatorial processing using pressure-controlled one-way valves

#9 | 2015-05-12
US14135765
Electricity

Metal organic chemical vapor deposition of resistive switching layers for ReRAM cells

#10 | 2015-03-05
US20150060753A1
Electricity

Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition

#11 | 2015-02-05
US20150034898A1
Electricity

Confined defect profiling within resistive random memory access cells

#12 | 2014-12-25
US20140377931A1
Electricity

Metal aluminum nitride embedded resistors for resistive random memory access cells

#13 | 2014-12-04
US20140357046A1
Electricity

ReRAM cells including TaSiN embedded resistors

#14 | 2014-11-11
US14016775
Electricity

Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition

#15 | 2014-10-30
US20140322884A1
Electricity

Nonvolatile resistive memory element with a silicon-based switching layer

#16 | 2014-09-18
US20140264231A1
Electricity

Confined defect profiling within resistive random memory access cells

#17 | 2014-09-18
US20140264223A1
Electricity

Metal aluminum nitride embedded resistors for resistive random memory access cells

#18 | 2014-06-26
US20140175361A1
Electricity

Resistive switching layers including Hf-Al-O

#19 | 2014-06-19
US20140166956A1
Electricity

Using saturated and unsaturated ALD processes to deposit oxides as ReRAM switching layer

#20 | 2014-04-17
US20140103284A1
Electricity

ReRAM cells including TaSiN embedded resistors

#21 | 2013-08-22
US20130214236A1
Electricity

Using TiON as electrodes and switching layers in ReRAM devices

#22 | 2013-08-15
US20130210193A1
Electricity

ReRAM stacks preparation by using single ALD or PVD chamber

InventorID:

390109 ⎘