Campbell, California
United States
22
2016-05-12
The entities that hold a legal rights for patent applications filed by inventor Hsueh Chien-Lan:
Chien-Lan Hsueh from Campbell, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Low-Temperature Deposition of Metal Silicon Nitrides from Silicon Halide Precursors
#2 | 2016-05-12DRAM MIMCAP Stack with MoO2 Electrode
#3 | 2016-01-26Low-temperature deposition of nitrides by UV-assisted ALD or CVD
#4 | 2015-07-02Systems and Methods for Parallel Combinatorial Vapor Deposition Processing
#5 | 2015-06-25Metal organic chemical vapor deposition of embedded resistors for ReRAM cells
#6 | 2015-06-25Methods of forming nitrides at low substrate temperatures
#7 | 2015-06-25Low-temperature growth of complex compound films
#8 | 2015-06-18High productivity combinatorial processing using pressure-controlled one-way valves
#9 | 2015-05-12Metal organic chemical vapor deposition of resistive switching layers for ReRAM cells
#10 | 2015-03-05Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition
#11 | 2015-02-05Confined defect profiling within resistive random memory access cells
#12 | 2014-12-25Metal aluminum nitride embedded resistors for resistive random memory access cells
#13 | 2014-12-04ReRAM cells including TaSiN embedded resistors
#14 | 2014-11-11Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition
#15 | 2014-10-30Nonvolatile resistive memory element with a silicon-based switching layer
#16 | 2014-09-18Confined defect profiling within resistive random memory access cells
#17 | 2014-09-18Metal aluminum nitride embedded resistors for resistive random memory access cells
#18 | 2014-06-26Resistive switching layers including Hf-Al-O
#19 | 2014-06-19Using saturated and unsaturated ALD processes to deposit oxides as ReRAM switching layer
#20 | 2014-04-17ReRAM cells including TaSiN embedded resistors
#21 | 2013-08-22Using TiON as electrodes and switching layers in ReRAM devices
#22 | 2013-08-15ReRAM stacks preparation by using single ALD or PVD chamber
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